151. Dualistic insulator states in 1T-TaS2 crystals.
- Author
-
Wang, Yihao, Li, Zhihao, Luo, Xuan, Gao, Jingjing, Han, Yuyan, Jiang, Jialiang, Tang, Jin, Ju, Huanxin, Li, Tongrui, Lv, Run, Cui, Shengtao, Yang, Yingguo, Sun, Yuping, Zhu, Junfa, Gao, Xingyu, Lu, Wenjian, Sun, Zhe, Xu, Hai, Xiong, Yimin, and Cao, Liang
- Subjects
CRYSTALS ,DEGREES of freedom ,BAND gaps ,CRYSTAL structure ,MONOMOLECULAR films ,ELECTRIC current rectifiers - Abstract
While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS
2 crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS2 crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a "three-dimensional" control for the era of slidetronics. While monolayer of 1T-TaS2 is considered to be a Mott insulator, the nature of the bulk insulating state is debated. Here the authors introduce a ladder-type structures with fractional misalignment of adjacent layers, showing that it becomes a Mott insulator due to decoupling between the layers. [ABSTRACT FROM AUTHOR]- Published
- 2024
- Full Text
- View/download PDF