151. Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing
- Author
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Fazio, B.a, Vulpio, M.a, Gerardi, C.a, Liao, Y.b, Crupi, I.b, Lombardo, S.b, Trusso, S.c, Neri, F.d, Fazio, B., Vulpio, M., Gerardi, C., Liao, Y., Crupi, I., Lombardo, S., Trusso, S., and Neri, F.
- Subjects
Materials science ,Silicon ,Nanocrystal Raman ,Annealing (metallurgy) ,Analytical chemistry ,chemistry.chemical_element ,Mineralogy ,Surfaces, Coatings and Film ,Settore ING-INF/01 - Elettronica ,Settore FIS/03 - Fisica Della Materia ,symbols.namesake ,Plasma-enhanced chemical vapor deposition ,Materials Chemistry ,Electrochemistry ,Crystalline silicon ,RAMAN-SPECTROSCOPY ,MICROCRYSTALLINE SILICON ,THIN-FILMS ,SCATTERING ,SPECTRA ,SUPERLATTICES ,NANOCRYSTALS ,SIO2-FILMS ,SIZE ,Renewable Energy, Sustainability and the Environment ,Nanocrystalline silicon ,Surfaces and Interfaces ,Condensed Matter Physics ,Crystallographic defect ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,chemistry ,symbols ,Raman spectroscopy - Abstract
Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochemical Society. All rights reserved.
- Published
- 2002