Nanocrystal MOS with silicon-rich oxide

Authors :: Isodiana Crupi
Emanuele Rimini
M. Melanotte
M. Vulpio
Cosimo Gerardi
Salvatore Lombardo
Barbara Fazio
Crupi, I.
Lombardo, S.
Gerardi, C.
Fazio, B.
Vulpio, M.
Rimini, E.
Melanotte, M.
Source :: Scopus-Elsevier, Gettering and Defect Engineering in Semiconductor Technology, pp. 675–680, 2002, info:cnr-pdr/source/autori:Crupi I, Lombardo S, Gerardi C, Fazio B, Vulpio M, Rimini E, Melanotte M/congresso_nome:Gettering and Defect Engineering in Semiconductor Technology/congresso_luogo:/congresso_data:2002/anno:2002/pagina_da:675/pagina_a:680/intervallo_pagine:675–680
Abstract: By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.

Subjects :: Materials science
Silicon
SRO
Physics and Astronomy (miscellaneous)
MOS memory
Oxide
Quantum dot
chemistry.chemical_element
Nanotechnology
Condensed Matter Physic
Condensed Matter Physics
Settore ING-INF/01 - Elettronica
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Nanocrystal
General Materials Science
Materials Science (all)

Database :: OpenAIRE
Journal :: Scopus-Elsevier, Gettering and Defect Engineering in Semiconductor Technology, pp. 675–680, 2002, info:cnr-pdr/source/autori:Crupi I, Lombardo S, Gerardi C, Fazio B, Vulpio M, Rimini E, Melanotte M/congresso_nome:Gettering and Defect Engineering in Semiconductor Technology/congresso_luogo:/congresso_data:2002/anno:2002/pagina_da:675/pagina_a:680/intervallo_pagine:675–680
Accession number :: edsair.doi.dedup.....027b7fb8db9b9bd05724ae89933784a1

Tools