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305 results on '"Decobert, J."'

154. 15 m pixel-pitch VGA InGaAs module for very low background applications

Author

Rouvié, A., Huet, O., Reverchon, J. L., Robo, J. A., Truffer, J. P., Decobert, J., Costard, E., and Bois, P.

Abstract

Thanks to the high transmission coefficient of short infrared wavelengths in the atmosphere and specific contrasts, SWIR imaging is an attractive technology for space applications such as astronomical or earth observation. Detection module must demonstrate high uniformity, sensitivity and resolution combined with compactness to meet the needs of this application field. Image sensors based on InGaAs photodiodes arrays present very low dark currents even at ambient temperature as high quality materials can be grown on InP substrates. Besides, the suppression of InP substrate after hybridization is a way to extend the detection range towards visible wavelengths. These properties result in a new generation of sensitive, compact and multifunctional InGaAs detection modules. In this paper, we describe the performances of an uncooled VGA InGaAs module recently developed. The 640x512 array with a pitch of 15m allows high resolution images. The excellent crystalline quality induces very low dark current densities at ambient temperature. The readout circuit is based on a capacitive trans-impedance amplifier with correlated double sampling resulting in low readout noise figure. This compact module appears as a serious alternative to the existing technologies for low light level imaging in the [0.4m-1.7m] spectral range.

Published
2011
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158. High Gain × Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes.

Author

Rouvie, A., Carpentier, D., Lagay, N., Decobert, J., Pommereau, F., and Achouche, M.

Abstract

This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiNx antireflection coating. The combined properties of very low dark current (I dark(M = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum. [ABSTRACT FROM PUBLISHER]

Published
2008
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159. Amplifying Waveguide Optical Isolator With an Integrated Electromagnet.

Author

Van Parys, W., Van Thourhout, D., Baets, R., Dagens, B., Decobert, J., Le Gouezigou, O., Make, D., and Lagae, L.

Abstract

We have demonstrated an amplifying waveguide optical isolator with an integrated electromagnet. This provides a solution to the generally poor magnetic remanence of this type of isolator. The proof of principle is presented and optimization routes are discussed. [ABSTRACT FROM PUBLISHER]

Published
2007
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161. Composant ? absorbant saturable pour la r?g?n?ration tout optique ? ultra haut d?bit

Author

Fatome, J., Massoubre, D., Pitois, S., Millot, FO, Landreau, J., Decobert, J., and Oudar, J.

Abstract

Dans ce travail, un absorbant saturable est utilis? pour am?liorer le taux d'extinction d'un train d'impulsions picosecondes cadenc? ? 160-GHz et centr? sur 1555?nm. Une am?lioration du taux d'extinction de 6?dB est observ?e sur une plage de longueur d'onde de 8?nm.

Published
2006

162. DC-92 4;GHz ultra-broadband high gain InP HEMT amplifier with 410 4;GHz gain-bandwidth product

Author

Meliani, C., Post, G., Rondeau, G., Decobert, J., Mouzannar, W., Dutisseuil, E., and Lefe`vre, R.

Abstract

A coplanar distributed amplifier, fabricated in a double channel InP HEMT technology, is presented. It exhibits a 13 4;dB gain and a 92 4;GHz −3 4;dB cutoff frequency that corresponds to a gain-bandwidth product of 410 4;GHz. Key aspects for distributed and coplanar design around 100 4;GHz are highlighted.

Published
2002

163. Effect of Metal-Organic Composition Fluctuation on the Atmospheric-Pressure Metal-Organic Vapor-Phase Epitaxy Growth of GaAlAs/GaAs and GaInAs/InP Structures

Author

Ossart, P., Brasil, M. J. S., Cardoso, L. P., Ganiere, J. D., Horiuchi, L., Decobert, J., and Sacilotti, M.

Subjects
MOVPE, AES, WTEM, BUBBLER, HETEROSTRUCTURES, PHOTOLUMINESCENCE, ORGANO-METALIC, EPITAXY, OMVPE
Abstract

We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. We show that the grwoth rates of GaAlAs and GaInAs layers, grown with trimethylgallium (TMG) and triethylgallium (TEG) sources, are of tens of angstrom per bubble for the methyl case and a few angstrom for the ethyl one.

164. Analysis and optimization by micro-beam X-ray diffraction of Al- GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applications

Author

Guillamet, R., Lagay, N., Mocuta, C., Dina Carbone, Lagree, P. -Y, Decobert, J., Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Institut Jean le Rond d'Alembert (DALEMBERT), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, and Boyer, Soline

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; Growth of AlGaInAs/InP heterostructures by Selective Area Metal Organic Vapour Phase Epitaxy is investigated in this paper using advanced characterization techniques and numerical modelling. Synchrotron radiation and X-Ray optics allow to have micro or sub-micro X-Ray probe. With this probe, it is possible to characterize our samples by X-Ray Diffraction on very restricted area. This technique was first used on adapted samples to measure locally thickness and composition vatriation and thus to deduce the diffusion length D/ks of the different elements from group III in the vapour phase. The difficulty was to precisely quantify the D/ks simultaneously three elements from group III. In particular Aluminium D/ks parameter was extracted for the first time by X-ray microprobe techniques. D/ks is the only adjustable parameter of the vapour phase diffusion model. This model predicts thickness, composition and emission wavelength everywhere on the substrate and is used to design the dielectric mask patterning. D/ks is consequently a critical parameter and must be known precisely. Strain compensated AlGaInAs MQW were investigated and completely mapped by X-Ray diffraction in order to quantify material thickness and composition. Measurement and simulation have been compared and have shown excellent agreement. This comparison validates the numerical model and then will be used to design next generation of integrated devices.

166. Growth and Characterization of Gaalas Gaas and Gainas Inp Structures - the Effect of a Pulse Metalorganic Flow

Author

Sacilotti, M., Horiuchi, L., Decobert, J., Brasil, M. J., Cardoso, L. P., Ossart, P., and Ganiere, J. D.

Subjects
ELECTRON-MICROSCOPY, Condensed Matter::Materials Science, MOLECULAR-BEAM EPITAXY, CHEMICAL VAPOR-DEPOSITION, STRUCTURES, SUPERLATTICES, HETEROSTRUCTURES, QUALITY, PHOTOLUMINESCENCE, QUANTUM-WELL, MOVPE GROWTH, PRESSURE
Abstract

GaAlAs/GaAs and GaInAs/InP thick layers, single and multiple quantum wells were grown by atmospheric pressure metalorganic vapor phase epitaxy. Auger electron spectroscopy, wedge transmission electron microscopy, x-ray diffraction, low-temperature photoluminescence, and scanning electron microscopy were used to analyze the crystal quality. These analysis techniques show that layers grown using high vapor pressure metalorganic sources present fluctuations in the ternary alloy composition. We propose that these fluctuations are due to the pulse character of the high vapor pressure metalorganic flow. Bubbling experiments were performed to show the relationship between ternary layer composition fluctuation and the pulse character of the metalorganic flow. High vapor pressure metalorganic source like trimethylgallium presents tens of Angstroms growth rate per pulse or bubble whereas a low vapor pressure source like triethylgallium presents few Angstroms growth rate per bubble.

195. High power single-longitudinal-mode OP-VECSEL at 1.55 µm with hybrid metal-metamorphic Bragg mirror.

Author

Tourrenc, J. P., Bouchoule, S., Khadour, A., Decobert, J., Miard, A., Harmand, J. C., and Oudar, J. L.

Subjects
BRAGG gratings, SPATIAL systems, ELECTRON emission, SILICON compounds, SUBSTRATE noise
Abstract

A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55 µm with an hybrid metal-metamorphic Bragg mirror on a SiC substrate. Output power up to 80 mW at room temperature is achieved, and 77 mW in single-longitudinal-mode operation. [ABSTRACT FROM AUTHOR]

Published
2007
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196. Electrical properties of 1.55 μm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime.

Author

Mangeney, J., Joulaud, L., Decobert, J., Lourtioz, J.-M., Perrossier, J.L., Cabaret, S., and Crozat, P.

Subjects
GALLIUM arsenide, PHOTOCONDUCTIVITY, ION bombardment
Abstract

Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm²/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths. [ABSTRACT FROM AUTHOR]

Published
2003
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