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Doping optimizations for InGaAs/InP composite channel HEMTs
- Source :
- Journal of Crystal Growth; 1998, Vol. 195 Issue: 1 p681-686, 6p
- Publication Year :
- 1998
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 195
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Periodical
- Accession number :
- ejs2576542
- Full Text :
- https://doi.org/10.1016/S0022-0248(98)00590-9