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In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power switches at 600-V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume, and dead-time effect for each technology is evaluated. Gate driver study shows that GaN has the lowest gate driver losses above 100 kHz and below 100 kHz, SiC has lowest gate losses. GaN has the best switching performance among three technologies that allows high efficiency at high-frequency applications. GaN-based inverter operated at 160-kHz switching frequency with 97.3% efficiency at 2.5-kW output power. Performance of three device technologies at different temperature, switching frequency, and load conditions shows that heat sink volume of the converter can be reduced by 2.5 times by switching from Si to GaN solution at 60 ^\circ C case temperature, and for SiC and GaN, heat sink volume can be reduced by 2.36 and 4.92 times, respectively, by increasing heat sink temperature to 100 ^\circ C. Output filter volume can be reduced by 43% with 24, 26, and 61 W increase in device power loss for GaN-, SiC-, and Si-based converters, respectively. WBG devices allow reduction of harmonic distortion at output current from 3.5% to 1.5% at 100 kHz. [ABSTRACT FROM AUTHOR]

The future development of high-performance power electronics will rely increasingly on system-level integration, where semiconductor devices are co-packaged with other active and passive components (e.g., gate drivers, filter capacitors, and inductors) into a power module. In view of the widespread electrification of pivotal elements of the energy generation and distribution infrastructure (e.g., smart grids, electric aircraft, electric vehicles), modularity is also increasingly gaining importance as a means of enhancing overall system performance and reducing long-term maintenance costs. This paper focuses on the development of a highly integrated three-to-one phase matrix converter for avionic applications. It proposes an integration approach that enhances the volumetric and gravimetric power handling capability, with enhanced electromagnetic and electrothermal performance as compared to established solutions. Maintenance is also simplified by the modular assembly approach. [ABSTRACT FROM AUTHOR]

A stacked substrate-chip-bump-chip-substrate assembly has been demonstrated in the construction of power switch modules with high power density and good electrical performance. In this paper, special effort has been devoted to material selection and geometric shape of the bumps in the design for improving the thermomechanical reliability of a highly integrated bidirectional switch. Results from 3-D finite-element simulation indicate that for all design cases the maximum von Mises stresses and creep strain accumulations occur in the solder joints used to join bumps on IGBTs during a realistic mission profile, but occur in the solder joints used to join bumps on DBC substrates during accelerated thermal cycling. The results from both the simulation and the accelerated thermal cycling experiments reveal that selection of Cu/Mo/Cu composite brick bumps in the stacked assembly can significantly improve the thermomechanical reliability of both the solder joints and the DBC substrates when compared to Cu cylinder bumps and Cu hollow cylinder bumps reported in previous work. Such results can be attributed to the effective reduction in the extent of mismatch of coefficients of thermal expansion between the different components in the assembly. [ABSTRACT FROM AUTHOR]

Abstract: Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigation for devices of different voltage classes (600 and 1200V) and different manufacturers, highlighting important differences in electro-thermal performance and failure mode as compared to Si devices. The goal is to derive information for design optimisation and reliable device development for a diverse range of target applications. [Copyright &y& Elsevier]

This paper proposes the model development of a packaged semiconductor power module, for use in a circuit simulation environment. Focusing on railway traction applications, it considers a state-of-the-art 6.5 kV insulated gate bipolar transistor (IGBT) module, taking into account the antiparallel connection of IGBTs and free-wheeling diodes, and including all main electrothermal and electromagnetic effects associated with the multi-chip structure. The description of semiconductor physics is coupled with self-heating effects; electromagnetic phenomena associated with the packaging, layout, and interconnections are also taken into account. To optimize the compromise between accuracy and computational effort, the device models are based on a mixed physical and behavioral description, and are scalable to be representative of a desired number of parallel devices and to allow for the introduction of parasitic elements, as required. Electromagnetic effects are modeled by means of equivalent lumped elements, extracted by numerical simulation of an accurate 3-D structural assembly model. The description of transient thermal phenomena relies on a finite-difference approach that considers the use of both essentially 1-D lumped equivalent models and fully 3-D distributed description. The model is validated statically and dynamically, against both data-sheet information and measurements; a selection of simulation examples demonstrates its usefulness and versatility. Although developed for a specific application scenario, the proposed approach is of general validity. [ABSTRACT FROM AUTHOR]

Abstract: To satisfy the design and optimization needs of increasing power device structural and functional integration, novel simulation approaches need to be considered. In particular, the availability of a unified platform enabling multi-physical-domain analysis and multi-level abstraction is paramount to ensure sufficient flexibility and provide the required insight. Based on VHDL-AMS, this work presents the model development for two integrated power devices, conceived for operation under quite diverse bias conditions and thus exhibiting different criticalities. Simulation results are checked against experimental data to demonstrate the usefulness of the description method considered. The proposed models can be usefully employed in a broad range of investigations, ranging from development activities to reliability investigation. [Copyright &y& Elsevier]

This paper analyzes the operation of PowerMOSFETs in the 42-V-PowerNet and shows that very stressful conditions are encountered, which can lead to severe reliability problems. To enable thorough investigations by circuit simulations an accurate physics-based compact model of the devices is proposed: it includes all important electrothermal effects relevant to the description of the observed failure mechanisms. By means of an advanced thermal-modeling approach, multichip assemblies can be accurately described, including mutual heating effects between neighboring devices. Some properly chosen examples demonstrate the validity of the model and its usefulness for reliability investigations. [ABSTRACT FROM AUTHOR]

Abstract: An experimental infrared method for the thermal characterisation of semiconductor devices during fast transient operation, in the range from a few microseconds and up to some milliseconds, is presented. The features which make it suitable and convenient, particularly for use with power electronics applications are pointed out; its time and space resolution are illustrated by means of properly chosen examples. The considered solution qualifies as a very versatile and powerful tool in many diverse lines of investigation. [Copyright &y& Elsevier]