101. A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory
- Author
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Min-Chuan Wang, Simon M. Sze, Hao Wang, Chih-Cheng Yang, Po-Hsun Chen, Cheng-Hsien Wu, Chih-Hung Pan, Hsi-Wen Liu, Tian-Jian Chu, Shengdong Zhang, Yu-Ting Su, Ting-Chang Chang, and Tsung-Ming Tsai
- Subjects
Operation method ,Materials science ,Forming voltage ,02 engineering and technology ,Hafnium compounds ,01 natural sciences ,RRAM ,rising time ,law.invention ,Hafnium oxide ,law ,0103 physical sciences ,Electrical and Electronic Engineering ,010302 applied physics ,Random access memory ,business.industry ,1T1R ,Transistor ,Forming processes ,temperature ,charge accumulation ,021001 nanoscience & nanotechnology ,Electronic, Optical and Magnetic Materials ,Resistive random-access memory ,Optoelectronics ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,0210 nano-technology ,business ,lcsh:TK1-9971 ,Biotechnology ,Voltage - Abstract
In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing the temperature in the forming process. However, the resulting electronic RRAM characteristics after each of these methods differ. While increasing the rising time causes greater damage to the switching layer due to longer accumulation of charge, increasing temperature in the forming process does not. The high temperature-formed RRAM excels in retention and endurance tests, proving an effective means to decrease forming voltage.
- Published
- 2018