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Incorporation of a bipolar incremental step pulse programming with thermal forming to reduce the forming voltage in 1T1R structure resistance random access memory

Authors :
Po-Hsun Chen
Hao-Xuan Zheng
Yu-Ting Su
Source :
Applied Physics Express. 13:056503
Publication Year :
2020
Publisher :
IOP Publishing, 2020.

Subjects

Subjects :
Random access memory
Materials science
business.industry
Pulse (signal processing)
General Engineering
General Physics and Astronomy
Optoelectronics
business
Thermoforming
Voltage

Details

ISSN :
18820786 and 18820778
Volume :
13
Database :
OpenAIRE
Journal :
Applied Physics Express
Accession number :
edsair.doi...........4393e9a638a463db2c25dd938ac55c3c
Full Text :
https://doi.org/10.35848/1882-0786/ab8861
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