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InN holds great promise for a wide range of applications, including broadband optical devices, high-frequency electronic devices, and serving as a substrate for highly sensitive gas detectors and efficient catalysts. Nevertheless, production of high-quality InN thin films through epitaxy has remained a significant challenge. This is primarily due to complexities arising from the low dissociation temperature and the high N2 equilibrium pressure of InN, which lead to formation of numerous nitrogen vacancies and a propensity to generate indium metal nanoparticles. Efficacy of the indium bilayer pre-deposition method for InN film growth has been established in prior studies. In this work, we introduce a specialized hydrogen insertion method to further enhance nitridation of the indium bilayer. The corresponding kinetic mechanism has been demonstrated through theoretical simulations and practical epitaxy experiments, leading to the development of an optimized hydrogen insertion process. This research represents a substantial improvement over existing InN epitaxial methods that involve control of the indium bilayer and introduces a novel mechanism for enhancing InN heteroepitaxy. [ABSTRACT FROM AUTHOR]

Nickel/bismuth (Ni/Bi) bilayers have recently attracted attention due to the occurrence of time-reversal symmetry breaking in the superconducting state. Here, we report on the structural, magnetic, and electric characterization of thin film Ni/Bi bilayers with several Bi thicknesses. We observed the formation of a complex layered structure depending on the Bi thickness caused by the inter-diffusion of Bi and Ni which leads to the stabilization of NiBi 3 at the Bi/Ni interface. The superconducting transition temperature and the transition width are highly dependent on the Bi thickness and the layer structure. Magnetoelectric transport measurements in perpendicular and parallel magnetic fields were used to investigate the temperature-dependent upper critical field within the framework of the anisotropic Ginzburg–Landau theory and the Werthamer–Helfand–Hohenberg model. For thicker samples, we observed a conventional behavior, similar to that shown by NiBi 3 bulk samples, including a small Maki parameter (α M = 0), no spin–orbit scattering (λ S O = 0) and nearly isotropic coherence length (γ = ξ ⊥ (0) / ξ ∥ (0) ≈ 1). The values obtained for these properties are close to those characterizing NiBi 3 single crystals. On the other hand, in very thin samples, the Maki parameter increases to about α M = 2.8. In addition, the coherence length becomes anisotropic (γ = 0.32) and spin–orbit scattering (λ S O = 1.2) must be taken into account. Our results unequivocally show that the properties characterizing the superconducting state in the Ni/Bi are strongly dependent on the sample thickness. [ABSTRACT FROM AUTHOR]

The slow Arrhenius process (SAP) is a dielectric mode connected to thermally activated equilibration mechanisms, allowing for a fast reduction in free energy in liquids and glasses. The SAP, however, is still poorly understood, and so far, this process has mainly been investigated at temperatures above the glass transition. By employing a combination of methods to analyze dielectric measurements under both isochronal and isothermal conditions, we were able to quantitatively reproduce the dielectric response of the SAP of different polymers and to expand the experimental regime over which this process can be observed down to lower temperatures, up to 70 K below the glass transition. Employing thin films of thicknesses varying between 10 and 800 nm, we further verified that the peak shape and activation energy of the SAP of poly(4-bromostyrene) are not sensitive to temperature, nor do they vary upon confinement at the nanoscale level. These observations confirm the preliminary trends reported for other polymers. We find that one single set of parameters—meaning the activation barrier and the pre-exponential factor, respectively, linked to the enthalpic and entropic components of the process—can describe the dynamics of the SAP in both the supercooled liquid and glassy states, in bulk and thin films. These results are discussed in terms of possible molecular origins of the slow Arrhenius process in polymers. [ABSTRACT FROM AUTHOR]

We have developed an experimental and analytical setup for thermal desorption spectroscopy of solid water films on surfaces. We obtain the coverage-dependent desorption kinetics of water molecules from a well-defined ultra-thin alumina/NiAl(110) surface in the coverage range of 0–2 monolayers. We use a novel deconvolution technique to eliminate the pumping delay of water vapor in the vacuum system, which has previously hindered the accurate estimation of desorption kinetic parameters, such as activation energy and pre-exponential factor. The coverage-dependent Arrhenius analysis reveals that the desorption activation energy decreases with increasing coverage in the sub-monolayer range, indicating that the water–water interaction is not attractive. We also find that the pre-exponential factor for the second layer is higher than that for the sub-monolayer. We explain this difference in terms of transition state theory and propose that entropic effects play a significant role in water desorption kinetics. [ABSTRACT FROM AUTHOR]

We investigate the magnetization and the Dzyaloshinskii–Moriya interactions (DMI) in Pt/Co/Re thin films in the case of perfect interfaces and upon the introduction of intermixing on both Co interfaces. Calculations were implemented on a series of systems with a countable number of cobalt atomic layers. Remarkably, Re can introduce a DMI at the interface with cobalt and also increase the DMI at the Pt/Co interface. We demonstrate that the chiral magnetic multilayer Pt/Co/Re with a chiral spin structure can achieve a substantial DMI value, which is almost double that attained in the prototype system Pt/Co/W. We also study the DMI as a function of the Re thickness, finding the optimal thickness to maximize the DMI. When we include a disorder that cancels a contribution from all first-neighbor Co atoms in the intermixed region, we find out that intermixing at the two interfaces affects the strength of the DMI solely when introduced at the Pt/Co interface, where the DMI loses almost half of its value. On the contrary, the mixing at the Co/Re interface has very little or no effect where the calculated values were not significantly decreased as compared to the case with perfect interfaces. [ABSTRACT FROM AUTHOR]

Temperature-dependent Raman spectral studies of BiFeO3 (BFO) films coated on three different substrates, viz., conducting Si (BFO-Si), sapphire (BFO-SAP), and fluorine-doped tin oxide (BFO-FTO), are reported between 123 and 773 K. The activity of Bi–O and Fe–O modes in these samples as a function of temperature shows different spectral features despite having synthesized from the same precursor. To understand the source of these variations, the spectra obtained on the above films were compared with those of bulk BiFeO3 (BFO-bulk) prepared via spark-plasma sintering. As the temperature increases, modes corresponding to the Bi–O activity at low frequency (120–180 cm−1) exhibit a redshift in their positions in all the samples. Between 350 and 550 K, BFO-SAP and BFO-Si samples show discernible anomalies in the positions of modes corresponding to the Fe–O activity (200–500 cm−1), which is not observed in the BFO-bulk and BFO-FTO samples. These anomalies are more pronounced for the modes between 350 and 500 cm−1, suggesting alterations in the Néel transition temperature (∼643 K for BiFeO3). Concurrently, another composite film of BiFeO3–CoFe2O4 coated on the Si substrate is explored. Raman studies on the composite film are used to compare and verify the influence of the substrate and defects on the magnetic ordering as a function of temperature. Our study highlights the significance and relevance of using Raman spectroscopy as a tool to discern various factors leading to local structural and magnetic variation in a given compound. [ABSTRACT FROM AUTHOR]

The discovery of strontium niobate (SNO) as a potentially new transparent electrode has generated much interest due to its implications in various optoelectronic devices. Pristine SNO exhibits exceptionally low resistivity (∼10−4 Ω cm) at room temperature. However, this low resistivity occurs due to large number of carrier concentration in the system, which significantly affects its optical transparency (∼40%) in the visible range and hinders its practical applications as a transparent electrode. Here, we show that modulating the growth kinetics via oxygen manipulation is a feasible approach to achieve the desired optoelectronic properties. In particular, epitaxial (001) SNO thin films are grown on (001) lanthanum aluminate by pulsed laser deposition at different oxygen partial pressures and are shown to improve the optical transparency from 40% to 72% (λ = 550 nm) at a marginal cost of electrical resistivity from 2.8 to 8.1 × 10−4 Ω cm. These changes are directly linked with the multi-valence Nb-states, as evidenced by x-ray photoelectron spectroscopy. Furthermore, the defect-engineered SNO films exhibit multiple electronic phases that include pure metallic, coexisting metal-semiconducting-like, and pure semiconducting-like phases as evidenced by low-temperature electrical transport measurements. The intriguing metal-semiconducting coexisting phase is thoroughly analyzed using both perpendicular and angle-dependent magnetoresistance measurements, further supported by a density functional theory-based first-principles study and the observed feature is explained by the quantum correction to the conductivity. Overall, this study shows an exciting avenue for altering the optical and transport properties of SNO epitaxial thin films for their practical use as a next-generation transparent electrode. [ABSTRACT FROM AUTHOR]

Ti-doped In 2 O 3 thin films with varying Ti contents are prepared by partial reactive co-sputtering using ceramic In 2 O 3 and metallic Ti targets and characterized by in situ x-ray photoelectron spectroscopy, electrical conductivity, and Hall-effect measurements. For a substrate temperature of 400 ° C , the carrier concentration increases faster than the Ti content and saturates at ≈ 7.4 × 10 20 c m − 3 . Based on these results, it is suggested that Ti does not directly act as donor in In 2 O 3 but is rather forming TiO 2 precipitates and that the related scavenging of oxygen generates oxygen vacancies in In 2 O 3 as origin of doping. Neutralization of oxygen vacancies is, therefore, suggested to be origin of the limitation of the carrier concentration in Ti-doped In 2 O 3 films. [ABSTRACT FROM AUTHOR]

The phenomenon of exchange bias has been extensively studied within crystalline materials, encompassing a broad spectrum from nanoparticles to thin-film systems. Nonetheless, exchange bias in amorphous alloys has remained a relatively unexplored domain, primarily owing to their inherently uniform disordered atomic structure and lacking grain boundaries. In this study, we present a unique instance of exchange bias observed in Fe–B–Nb amorphous thin films, offering insights into its origins intertwined with the system's spin-glass-like behavior at lower temperatures. The quantification of exchange bias was accomplished through a meticulous analysis of magnetic reversal behaviors in the liquid-helium temperature range, employing a zero-field cooling approach from various initial remanent magnetization states (±MR). At reduced temperatures, the appearance of asymmetric hysteresis, a hallmark of negative exchange bias, undergoes a transformation into symmetric hysteresis loops at elevated temperatures, underscoring the intimate connection between exchange-bias and dynamic magnetic states. Further investigations into the magnetic thermal evolution under varying probe fields reveal the system's transition into a spin-glass-like state at low temperatures. We attribute the origin of this unconventional exchange bias to the intricate exchange interactions within the spin-glass-like regions that manifest at the interfaces among highly disordered Fe-nuclei. The formation of Fe-nuclei agglomerates at the sub-nanometer scale is attributed to the alloy's limited glass-forming ability and the nature of the thin-film fabrication process. We propose that this distinctive form of exchange bias represents a novel characteristic of amorphous thin films. [ABSTRACT FROM AUTHOR]

Transition metal oxides provide opportunities to induce and modulate the superconducting state, due to the delicate interplay between charge, spin, orbital, and lattice order. In this work, 5d transition metal oxide SrTaO3 films were deposited by pulsed laser deposition, and an anomalous negative resistance was observed. The negative resistance can be ascribed to the nonuniform conductivity, associated with nonuniform electronic states in the SrTaO3 thin films, as confirmed by conductive atomic force microscopy and x-ray photoelectron spectroscopy. Moreover, a sharp drop in the resistance together with a decrease in magnetization was observed at around 40 K. This might imply a possible superconducting state. The negative resistance can be well explained based on an equivalent circuit comprising normal and superconductive states, also supporting the possible superconducting state in SrTaO3 thin films. This work promotes the exploring and revealing of the mechanism in tantalates superconductivity. [ABSTRACT FROM AUTHOR]

The use of flashlamp annealing as a low-temperature alternative or supplement to thermal annealing is investigated. Flashlamp annealing and thermal annealing were conducted on 100 nm thick indium tin oxide (ITO) films deposited on glass to compare the properties of films under different annealing methods. The ITO samples had an average initial sheet resistance of 50 Ω/sq. After flashlamp annealing, the sheet resistance was reduced to 33 Ω/sq only, while by thermal annealing at 210 °C for 30 min, a sheet resistance of 29 Ω/sq was achieved. Using a combination of flashlamp annealing and thermal annealing at 155 °C for 5 min, a sheet resistance of 29 Ω/sq was achieved. X-ray diffraction analysis confirmed that flashlamp annealing can be used to crystallize ITO. Flashlamp annealing allows for low-temperature crystallization of ITO on a time scale of 1–3 min. Through electrical and optical characterizations, it was determined that flashlamp annealing can achieve similar electrical and optical properties as thermal annealing. Flashlamp offers the method of low-temperature annealing, which is particularly suitable for temperature sensitive substrates. [ABSTRACT FROM AUTHOR]

We study epitaxial growth, crystal structures, and magnetic properties of Fe–As compound thin films grown on GaAs (111)B substrates at various values of the As4:Fe flux ratio γ, using molecular beam epitaxy. The samples grown at low As4 flux (γ = 0.3, sample A) show mainly a body-centered-cubic (bcc) crystal structure, exhibiting ferromagnetic properties similar to bcc Fe. Meanwhile, the Fe–As samples grown at medium γ (2.7–4.5, sample group B) comprise regions of Ni2In-type FeAs (a hexagonal crystal with lattice constants of a = 0.399 nm and c = 0.536 nm), which are grown at the bottom and interface with the GaAs buffer layer, and a layer of non-stoichiometric FeAs with a DO3 structure (a = 0.522 nm) formed on the top. The DO3-structure FeAs phase contains partially transformed regions, which are characterized by thin stripes in a scanning transmission electron microscopy image. Furthermore, in the sample grown with high γ = 8.5 (sample C), a hexagonal Fe–As crystal with a large in-plane lattice constant (a = 0.691 nm and c = 0.542 nm) and threefold screw axes are observed. None of these crystal structures of Fe–As compounds has ever been reported. While sample C shows no ferromagnetism, the samples in group B exhibit strong ferromagnetism with high Curie temperature TC above 400 K. These new ferromagnetic Fe–As compounds are promising for spintronic device applications. [ABSTRACT FROM AUTHOR]

Nb 3 Sn and V 3 Si thin films are promising candidates for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues. This exploratory study investigates the structural and chemical effects of thermal annealing, both i n − s i t u and post-sputtering, on DC-sputtered Nb 3 Sn and V 3 Si films with varying thicknesses, deposited on Nb or Cu substrates. Building upon our initial studies [Howard et al., Proceedings of the SRF'21, East Lansing, MI (JACoW, 2021), p. 82.], we provide fundamental insights into recrystallization, phase changes, and the issues of stoichiometry and strain. Through annealing at 950 ° C, we have successfully enabled the recrystallization of 100 nm thin Nb 3 Sn films on Nb substrates, yielding stoichiometric and strain-free grains. For 2 μ m thick films, elevated annealing temperatures led to the removal of internal strain and a slight increase in grain size. Moreover, annealing enabled a phase transformation from an unstable to a stable structure in V 3 Si films, while we observed significant Sn loss in 2 μ m thick Nb 3 Sn films after high-temperature annealing. Similarly, annealing films atop Cu substrates resulted in notable Sn and Si loss due to the generation of Cu–Sn and Cu–Si phases, followed by evaporation. These results encourage us to refine our process to obtain high-quality sputtered films for SRF use. [ABSTRACT FROM AUTHOR]

The demand for applications, such as coatings, separation filters, and electronic packaging, has greatly driven the research of polymer films. At nanometer scale, mechanical properties of thin polymer films can significantly deviate from bulk. Despite outstanding progresses, there still lack deep discussions on nonlinear viscoelastic–viscoplastic response and their interactions under nanoconfinement. In this work, by conducting measurements via the bubble inflation method and modelling using Schapery and Perzyna equations, we demonstrate nonlinear viscoelastic–viscoplastic properties of freely standing thin polystyrene (PS) films. The results show the unchanged glassy compliance and the rubbery stiffening phenomenon for thin PS films, where the lower rubbery plateau in rubbery stiffening may originate from the induced molecular orientation by plastic deformation. With decreasing film thickness, viscosity and yield stress in viscoplasticity increase in an exponential and a linear trend, respectively, indicating the significant role of nanoconfinement effect on viscoplastic properties. These findings may reveal that there are many properties from linear viscoelasticity to nonlinear viscoelasticity–viscoplasticity that need to be explored and unveiled for sufficient understanding of the nanoconfinement effect on altering mechanical behavior of polymers. [ABSTRACT FROM AUTHOR]

We have studied the epitaxial growth of Si thin films on the Cd(0001) surface using low-temperature scanning tunneling microscopy. When deposited at low temperatures (100 K), Si atoms form dendritic islands with triangular shapes, indicating the existence of anisotropic edge diffusion in the process of Si film growth. After annealing to elevated temperatures, the triangular dendritic Si islands become hexagonal compact islands. Moreover, the 2D Si islands located on two different substrate terraces exhibit different heights due to the influence of quantum-well states in Cd(0001) films. Based on high-resolution scanning tunneling microscopy images, it is observed that the first, second, and third Si layers show the pseudomorphic 1 × 1 structure. In particular, the first and second layer islands reveal the opposite triangles, indicating the hexagonal close-packed stacking of Si atoms. These results provide important information for the growth of pristine Si films on metal substrates and the understanding of Si–metal interaction. [ABSTRACT FROM AUTHOR]

This study investigated the improvement of the electro-optical properties of a liquid crystal (LC) cell fabricated through brush coating using graphene oxide (GO) doping. The physical deformation of the surface was analyzed using atomic force microscopy. The size of the groove increased as the GO dopant concentration increased, but the direction of the groove along the brush direction was maintained. X-ray photoelectron spectroscopy analysis confirmed that the number of C–C and O–Sn bonds increased as the GO concentration increased. Since the van der Waals force on the surface increases as the number of O–metal bonds increases, we were able to determine why the anchoring energy of the LC alignment layer increased. This was confirmed by residual DC voltage and anchoring energy measurements that were later performed. As the GO concentration increased, the width of the hysteresis curve decreased, indicating that the residual DC voltage decreased. Additionally, the 15% GO-doped sample exhibited a significant increase in its anchoring energy up to 1.34 × 10−3 J/m2, which is similar to that of rubbed polyimide. It also secured a high level of electro-optical properties and demonstrated potential as a next-generation thin-film display despite being produced via a simple brush-coating process. [ABSTRACT FROM AUTHOR]

Ferroelectric (Al, Sc)N thin films have the potential for use in low-power memory applications. This study demonstrates the thickness scalability of ferroelectricity down to an approximately 20 nm-thick (Al0.8Sc0.2)N film sandwiched between microfabricable TiN electrodes. The impact of the deposition gas atmosphere during the sputtering process and the top electrode materials on the crystal structures and ferroelectric properties was investigated for 20–30 nm-thick (Al0.8Sc0.2)N thin films deposited on Si substrates covered with a TiN layer by radio frequency magnetron sputtering. The deposition atmosphere did not strongly affect the crystal structures of the 30 nm-thick (Al0.8Sc0.2)N films but significantly affected their ferroelectric properties. The leakage current density decreased for films deposited under pure N2 gas compared to the films deposited under a gas mixture of 0.67Ar + 0.33N2. The ferroelectric properties of 20 nm-thick (Al0.8Sc0.2)N films were changed by the top electrode materials; both the switching electric field and its maximum applicable electric field increased for the TiN top electrodes compared with the Pt top electrodes, improving the saturation characteristics of the remnant polarization (Pr) against the applied electric field. Consequently, the 20 nm-thick (Al0.8Sc0.2)N film sandwiched between the microfabricable TiN top and bottom electrodes showed ferroelectricity without noticeable degradation with decreasing film thickness; the film maintained large Pr values of over 100 μC/cm2 in the temperature range from room temperature to 150 °C. The present data open the door to scalable ferroelectric random-access memories using almost thickness-degradation-free thin (Al, Sc)N films with microfabricable TiN electrodes. [ABSTRACT FROM AUTHOR]

The article discusses the chiral induced spin selectivity effect (CISS), which is the finding that the motion of an electron within or through chiral systems depends on the spin of that electron. The article explains that while the effect has been observed experimentally, developing a quantitative theoretical description has been challenging. The article also highlights the different types of experimental measurements that have been used to study CISS, including measurements of spin-dependent transmission, tunneling currents, magnetization, and magnetic domains. The article concludes by discussing the potential applications of CISS in spintronics, electrochemistry, and biology, and expresses optimism that further research will reveal the mechanism behind the CISS effect. [Extracted from the article]

Glass-forming liquids exhibit long-lived, spatially correlated dynamical heterogeneity, in which some nm-scale regions in the fluid relax more slowly than others. In the nanoscale vicinity of an interface, glass-formers also exhibit the emergence of massive interfacial gradients in glass transition temperature Tg and relaxation time τ. Both of these forms of heterogeneity have a major impact on material properties. Nevertheless, their interplay has remained poorly understood. Here, we employ molecular dynamics simulations of polymer thin films in the isoconfigurational ensemble in order to probe how bulk dynamic heterogeneity alters and is altered by the large gradient in dynamics at the surface of a glass-forming liquid. Results indicate that the τ spectrum at the surface is broader than in the bulk despite being shifted to shorter times, and yet it is less spatially correlated. This is distinct from the bulk, where the τ distribution becomes broader and more spatially organized as the mean τ increases. We also find that surface gradients in slow dynamics extend further into the film than those in fast dynamics—a result with implications for how distinct properties are perturbed near an interface. None of these features track locally with changes in the heterogeneity of caging scale, emphasizing the local disconnect between these quantities near interfaces. These results are at odds with conceptions of the surface as reflecting simply a higher "rheological temperature" than the bulk, instead pointing to a complex interplay between bulk dynamic heterogeneity and spatially organized dynamical gradients at interfaces in glass-forming liquids. [ABSTRACT FROM AUTHOR]

Lead-free piezoelectric (K, Na)NbO3 (KNN) is considered one of the promising candidates for the replacement of Pb(ZrxTi1−x)O3. Several studies underlined the issue of K and Na volatility with increasing deposition temperatures, leading to high leakage currents in thin films, which still represents a major drawback for applications. This paper shows how epitaxial growth with concomitant preferred orientation of KNN films on niobium-doped strontium titanate (Nb:STO) depends on growth temperature and substrate strain. A preferred out-of-plane polar (001) orientation of KNN is obtained at high temperatures (>600 °C), while (100) orientation is dominant for lower ones. The (001) orientation is forced out-of-plane due to the sizeable in-plane stress derived from a negative lattice mismatch of pseudo-cubic KNN with respect to the underlying cubic (001) Nb:STO substrate. Moreover, we show that K-Na deficiency and high leakage of epitaxial KNN films deposited at high temperatures are accompanied by the appearance of a pattern of orthogonal spontaneous ferroelectric domains aligned to the [100] and [010] directions of Nb:STO. This pattern, visible in secondary electron microscopy, piezoforce response microscopy, and conductive atomic force microscopy images, is uncorrelated to the surface morphology. Supported by reciprocal space mapping by x-ray diffraction, this phenomenon is interpreted as the result of strain relaxation via ferroelectric domain formation related to K-Na deficient films displaying a sizable and increasing compressive strain when grown on Nb:SrTiO3. Our findings suggest that strain engineering strategies in thin films could be used to stabilize specific configurations of piezo- and ferroelectric domains. [ABSTRACT FROM AUTHOR]

A key development toward new electronic devices integrating memory and processing capabilities could be based on the electric control of the spin texture of charge carriers in semiconductors. In that respect, GeTe has been recently recognized as a promising ferroelectric Rashba semiconductor, with giant spin splitting of the band structure, due to the inversion symmetry breaking arising from ferroelectric polarization. Here, we address the temperature dependence of the ferroelectric structure of GeTe thin films grown on Si(111). We demonstrate the hysteretic behavior of the ferroelectric domain density upon heating/cooling cycles by low energy electron microscopy. This behavior is associated with an abnormal evolution of the GeTe lattice parameter as shown by x-ray diffraction. We explain these thermomechanical phenomena by a large difference of thermal expansion coefficients between the film and the substrate and to the pinning of the GeTe/Si interface. The accumulated elastic energy by the GeTe thin film during sample cooling is released by the formation of a -nanodomains with in-plane ferroelectric polarization components. [ABSTRACT FROM AUTHOR]

We conducted a comprehensive investigation on the influence of TiN thickness and stress on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films. TiN top electrode layers with varying thicknesses of 2, 5, 10, 30, 50, 75, and 100 nm were deposited and analyzed. It was observed that the in-plane tensile stress in TiN films increased with the thickness of the TiN top electrode. This is expected to elevate the tensile stress in the Hf 0.5 Zr 0.5 O 2 film, consequently leading to an enhancement in ferroelectric polarization. However, the effect of stress on the ferroelectric behavior of Hf 0.5 Zr 0.5 O 2 films exhibited distinct stages: improvement, saturation, and degradation. Our study presents novel findings revealing a saturation and degradation phenomenon of in-plane tensile stress on the ferroelectric properties of polycrystalline Hf 0.5 Zr 0.5 O 2 films, thereby partially resolving the discrepancies between experimental observations and theoretical predictions. The observed phase transformation induced by tensile stress in Hf 0.5 Zr 0.5 O 2 films played a crucial role in these effects. Furthermore, we found that the impact of the TiN top electrode thickness on other factors influencing ferroelectricity, such as grain size and oxygen vacancies, was negligible. These comprehensive results offer valuable insights into the influence of stress and TiN top electrode thickness on the ferroelectric behavior of Hf 0.5 Zr 0.5 O 2 films. [ABSTRACT FROM AUTHOR]

Phosphorus (P) doping in ZnTe grown by molecular beam epitaxy (MBE) under alternating source supply method was investigated to achieve p-type P-doped ZnTe (ZnTe:P) thin films using InP as a P dopant source, and the result was compared with those grown under a simultaneous MBE growth where the source beams were supplied simultaneously. As a result, P concentration in ZnTe thin films was found to increase with increasing the InP flux, and high P concentration up to 6.6 × 1019 cm−3 was confirmed by secondary ion mass spectroscopy (SIMS) analyses. However, In incorporation was also observed in the ZnTe:P thin films, despite that the detected In concentration by SIMS was more than one order of magnitude lower than the P concentration and almost two order of magnitude lower than those grown by the simultaneous MBE. Photoluminescence measurement of ZnTe:P thin film grown under alternating source supply showed a P-related acceptor bound exciton (Ia) peak at 2.37 eV, and the intensity of Ia emission increased after the annealing treatment, indicating the activation of P acceptor. The annealing also decreases the resistivity of the film. The results clearly indicate that the alternating source supply growth is effective to obtain ZnTe:P thin films with better P doping properties. [ABSTRACT FROM AUTHOR]

Sr2CoRuO6 in its bulk form shows spin glass behavior with a transition temperature of 95 K, and in its epitaxial thin film, it shows similar behavior with a transition temperature of 135 K. We have studied the structural, electronic, and magnetic properties of a polycrystalline thin film of oxygen-deficient Sr2CoRuO6−δ (SCRO), which shows ferrimagnetic or glassy behavior up to room temperature. The presence of oxygen deficiency causes multivalent cations Co3+ and Co2+ and Ru4+ and Ru5+, which introduces various kinds of magnetic interactions between Co3+–O–Co2+, Co3+–O–Ru4+, Co2+–O–Ru4+, Co3+–O–Ru5+, and Co2+–O–Ru5+ exchange paths, producing unusual exchange bias effects in the single layer thin film of SCRO. The interionic charge transfer between Co and Ru ions as a result of the negative charge transfer energy of the system helps in visualizing the unconventional exchange bias effect in the system. [ABSTRACT FROM AUTHOR]

Bandpass filters (BPFs) are optical filters with significantly high transmittance in a specific wavelength range and low transmittance on both sides. Infrared BPFs can reduce system losses and overheating caused by other light wavelengths owing to their ability to selectively transmit infrared light of the desired wavelength. This article discusses the potential of using a high refractive index material, β-FeSi2, in BPFs. To the best of our knowledge, no studies have applied β-FeSi2 to infrared BPFs. Simulation results showed that its high refractive index allows the excellent performance of the BPF to be achieved using a multilayer thin film structure with only three layers. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy results showed that the β-FeSi2 thin film exhibited the lowest absorptance of approximately 0 when the correct stoichiometry (Fe:Si = 1:2) was achieved through co-sputtering. Based on these findings, a β-FeSi2/SiO2/β-FeSi2 multilayer thin film was designed to fabricate the BPF. The fabricated BPF exhibited a narrow peak and achieved a peak transmittance exceeding 80%. This suggested that β-FeSi2 is a promising material for fabricating infrared BPFs. Utilizing these filters is expected to yield significant efficiency improvements and reduce losses across various applications, including thermophotovoltaics and infrared heaters. [ABSTRACT FROM AUTHOR]

Spectroscopic ellipsometry and some other optical metrology techniques, such as reflectometry and scatterometry, are model-based optical measurements and, therefore, require appropriate modeling to determine the geometric and material properties of substrates, thin films, and multilayer structures. Parametric sensitivity analysis (SA) provides essential assistance in the model-building process to quantify the relative importance of model parameters for model output and to identify those with high/little influence. SA can be performed in a variety of ways, and this article discusses an application of the Morris or elementary effect (EE) method, a screening type SA procedure, to spectroscopic ellipsometry modeling. The method is a global SA technique and uses a stepping of m parameters along certain so-called "trajectories" or sequences of points in parameter space, randomly constructed in order to maximally fill the volume of the m -dimensional parameter space. However, it was thought that the EE method relies greatly on a sampling strategy or a way of selecting "optimized trajectories" in the parameter space, i.e., a necessary number of trajectories chosen to be well spread over the space to properly cover the entire realistic ranges of all input factors. Here, we use two sampling methods for selecting trajectories with possibly different distributions and investigate their effects on the estimation of various sensitivity measures in spectroscopic ellipsometry data modeling. The SA results indicate that the performance of the sampling strategy should not be judged only by maximizing the trajectory spread but also include some additional convergence criteria for the sensitivity measures. [ABSTRACT FROM AUTHOR]

We investigated leakage current characteristics affected by crystallinity and domain wall currents of epitaxial Bi5Ti3FeO15 (BTFO) thin films on Nb-doped SrTiO3 substrates. Highly a-oriented BTFO thin films, highly c-oriented BTFO thin films, and BTFO thin films with a mixture of a-oriented and c-oriented crystallinity were prepared by controlling the substrate temperature and the pulsed laser deposition deposition rate. Highly c-oriented BTFO thin films exhibited the best leakage current characteristics because the Bi2O2 layers were placed perpendicular to the c-axis to reduce leakage currents. The BTFO thin films with a mixture of a-oriented and c-oriented crystallinity showed larger leakage currents compared to highly c-oriented BTFO thin films. The current domains of the BTFO thin films corresponding to the ferroelectric domain structures were observed by a conducting atomic force microscope, and it was observed that leakage currents were formed around the domain walls. In particular, the largest leakage currents are formed at the boundaries of c-oriented domains and a-oriented domains, and these domain boundaries confirmed that the BTFO thin films with a mixture of a-oriented and c-oriented crystallinity were responsible for the largest leakage currents. [ABSTRACT FROM AUTHOR]

The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 µA, field-effect mobility of 13.4 cm2 V−1 s−1, and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology. [ABSTRACT FROM AUTHOR]

The investigation and tunning of positive exchange bias (PEB) and negative exchange bias (NEB) are reported at room temperature (RT) and low temperature (20 K), respectively, in a series of top-pinned Ni81Fe19(tFM = 5, 8, 11, 14, 17, and 20 nm)/Ir7Mn93(10 nm) polycrystalline heterostructure thin films grown in the presence of a 1 kOe in situ magnetic field by systematically controlling the microstructural parameters such as thickness, roughness, and crystallite/grain size. On decreasing the thickness (roughness) of NiFe from 20 nm (0.49 nm) to 5 nm (0.28 nm), an enhancement in PEB and NEB is observed from +12 to +22 Oe and −300 to −556 Oe at RT and 20 K, respectively. It is observed that both exchange bias and coercivity substantially depend on the atomic scale roughness of the interface width (NiFe/IrMn). The representative plane-view of transmission electron microscopy (TEM) measurements revealed the enhanced antiferromagnet (AF) grain size on decreasing the thickness of ferromagnetic, whereas cross-sectional TEM studies exhibited the sharp interfaces in the bilayer samples after magnetic annealing. A unique correlation between the training mechanism and the degree of asymmetry is established. Further, the training measurement data are fitted with various theoretical models that support the fact that not only interfacial but also bulk AF spins play a vital role in the exchange bias. Thus, the present study reveals the microstructural insights by varying the thickness of NiFe to address the unresolved issues of the EB by directly correlating it with interface roughness and the crystallite/grain size of AF in it, probed using the magnetoresistance technique. [ABSTRACT FROM AUTHOR]

The cobalt-based full Heusler alloy Co2MnGa (CMG) is well known for exhibiting an exotic phenomenon such as magnetic Weyl semimetallic nature with a high Curie temperature of ∼700 K and a giant anomalous Hall effect. Here, we report a detailed study of structural, electrical, and magnetic properties of Co2MnGa thin films (thickness in the 40–10 nm range) grown on Si(100) by the direct-current magnetron co-sputtering technique using Co and MnGa targets. Structural analysis of the samples revealed the polycrystalline nature of these films with B2 type structural ordering. The damping parameter decreases with the increase in film thickness and reaches the minimum value of 6.1 × 10−3 for a 40 nm thin CMG film. These CMG films are magnetically isotropic and soft ferromagnetic in nature. A remarkably high value of anomalous Hall conductivity (AHC) of 1920 S/cm (2 K) is found for the 40 nm thin film, which is comparable to earlier reported values on highly ordered CMG films. Nearly 73% of this AHC value originates from the intrinsic contribution. The AHC and longitudinal conductivity both increase with the film thickness. Different scaling mechanisms are used to compute the intrinsic and extrinsic contributions playing a role in AHC. The analysis of advanced scaling [by Tian et al., Phys. Rev. Lett. 103, 1–4 (2009)] performed on these CMG films suggests the consistency in the enhanced intrinsic AHC value irrespective of the thickness and a decrease in skew scattering contribution with thickness. These results will enhance the understanding about the magnetic and transport properties of Co2MnGa thin films of different thicknesses and suggest it to be a promising material for topospintronic applications. [ABSTRACT FROM AUTHOR]

Hf0.5Zr0.5O2 (HZO) is a promising candidate for low-power non-volatile memory due to its nanoscale ferroelectricity and compatibility with silicon-based technologies. Stress and oxygen vacancy (VO) are key factors that impact the ferroelectricity of HZO. However, their combined effects have not been extensively studied. In this study, we investigated the impact of the VO content on HZO thin films' ferroelectricity under different electrode stresses by using TiN and tungsten (W) top electrodes and controlling ozone dose time during HZO deposition. The HZO thin films with W top electrodes exhibit elevated stress levels and a greater abundance of orthorhombic/tetragonal phases, and the HZO thin films with TiN top electrode shows an increase in the monoclinic phase with increasing ozone dose time. The residual polarization (Pr) of the capacitors with TiN and W top electrodes displayed different or even opposing trends with increasing ozone dose time, and the VO content decreases with increasing ozone dose time for both sets of capacitor samples. We propose a model to explain these observations, considering the combined influence of electrode stresses and VO on the free and formation energy of the crystalline phase. Increasing the VO content promotes the transformation of the tetragonal phase to the orthorhombic phase in HZO films with TiN top electrodes, and with W top electrodes, a higher VO content prevents the tetragonal phase from transforming into the orthorhombic/monoclinic phase. Additionally, an alternative explanation is proposed solely from the perspective of stress. These findings provide valuable insights into the regulation of ferroelectricity in HZO thin films. [ABSTRACT FROM AUTHOR]

X-ray photoelectron spectroscopy (XPS) is generally used for chemical analysis of surfaces and interfaces. This method involves the analysis of changes in binding energies and peak shapes of elements under consideration. It is also possible to use XPS to study the effect of x-ray radiation on the electrical properties of thin films. We measured the Si 2p peak using x-ray powers of 300 and 150 W on ∼135 nm silicon dioxide (SiO2) thin films grown on both n- and p-type substrates while applying DC or AC external biases. Using the shifts in the binding energy of the Si 2p peak, we calculated the resistances and the capacitances of the SiO2 thin film. The way that the binding energies of the Si 2p peak and the capacitance of the thin film change as a function of the type of Si substrate and the power of the x-ray are explained using band bending. [ABSTRACT FROM AUTHOR]

Indium tin oxide (ITO) film, which is the most commonly used transparent conductive film (TCF), has traditionally been believed to be transparent in the visible spectrum but to reflect infrared (IR) light beyond the plasma wavelength (λp). However, our theoretical analysis challenges this notion by demonstrating that an ultrathin ITO TCF that is thinner than the light's penetration depth can overcome the transmission barrier at λp. To validate the theoretical modeling, we have successfully fabricated ultrathin ITO films that, despite having λp ≈ 1 μm, remain transparent from 400 nm to 20 μm. This represents the broadest transparency range ever reported for any In2O3-based TCF. The 10-nm-thick ITO TCFs have high visible transmittance (91.0% at 550 nm), low resistivity (5 × 10−4 Ω cm), and good IR transmittance (averaging 60% over 1.35–18.35 μm). Their IR transparency facilitates radiative cooling of the underlying circuitry. When an operational resistor is enclosed by commercial ITO TCFs that are 140 nm thick, its temperature increases. However, using 10-nm-thick ITO TCFs instead of the commercial ones can completely avoid this temperature rise. Moreover, attaching a silver grid to a 10-nm-thick ITO TCF can reduce the effective sheet resistance to ∼10 Ω/□ at the expense of only ∼3% transmittance. This development paves the way for large-scale applications that require low sheet resistance and far-IR transparency. [ABSTRACT FROM AUTHOR]

The thermal conductivity (k) of polycrystalline SiC thin films is relevant for thermal management in emerging SiC applications like microelectromechanical and optoelectronic devices. In such films, k can be substantially reduced by microstructure features including grain boundaries, thin film surfaces, and porosity, although these microstructural effects can also be manipulated through thermal annealing. Here, we investigate these effects by using microfabricated suspended devices to measure the thermal conductivities of nine low-pressure chemical vapor deposition SiC films of varying thicknesses (from 120 to 300 nm) and annealing conditions (as-grown and annealed at 950 and 1100 °C for 2 h, and in one case 17 h). Fourier-transform infrared spectroscopy, x-ray diffraction spectra, and density measurements are also used to characterize the effects of annealing on the microstructure of selected samples. Compared to as-deposited films, annealing at 1100 °C typically increases the estimated grain size from 5.5 to 6.6 nm while decreasing the porosity from around 6.5% to practically fully dense. This corresponds to a 34% increase in the measured thin film thermal conductivity near room temperature from 5.8 to 7.8 W/m K. These thermal conductivity measurements show good agreement of better than 3% with fits using a simple theoretical model based on the kinetic theory combined with a Maxwell–Garnett porosity correction. Grain boundary scattering plays the dominant role in reducing the thermal conductivity of these films compared to bulk single-crystal values, while both grain size increase and porosity decrease play important roles in the partial k recovery of the films upon annealing. This work demonstrates the effects of modifying the microstructure and, thus, the thermal conductivity of SiC thin films by thermal annealing. [ABSTRACT FROM AUTHOR]

Oxygen vacancies in indium tin oxide (ITO) thin films provide a direct route to effectively tune the free electron density and thereby, controlling the epsilon-near-zero (ENZ) cut-off wavelength, the wavelength at which the real part of permittivity crosses zero of the permittivity axis. In this report, oxygen vacancies in pulsed laser deposited ITO thin films are systematically tuned using different background gases (O 2 , N 2 , Ar, and He). ENZ cut-offs are observed for the films deposited under He and Ar gases. In contrast, no such cut-offs are observed in the case of other two gases. An ITO thin film deposited under He gas exhibits deeper resonance signal than the one deposited under Ar gas. As expected, no such dip in the resonance spectra is observed for the films deposited under O 2 and N 2 gases. This observation is directly correlated to the change in the number of oxygen vacancies under different ambient gases. A modified transfer matrix method which incorporates surface roughness as an effective medium layer is developed to describe the experimentally observed resonance spectra numerically. Angular invariancy of ENZ plasmon resonance and the difference in absorption values for ITO films deposited under different gases is understood in terms of local field intensity enhancement factor. The study presented here will certainly be very useful in understanding the ENZ plasmon resonance phenomena as a whole. Additionally, ITO films deposited under an inert gas environment could be excellent material platforms for realizing several exotic ENZ applications. [ABSTRACT FROM AUTHOR]

We report measurements of the Meissner screening profile in a Nb (300 nm)/ Al 2 O 3 thin film using 8 Li β -detected nuclear magnetic resonance (β -NMR). The NMR probe 8 Li was ion-implanted into the Nb film at energies ≤ 20 keV, corresponding to mean stopping depths comparable to Nb 's magnetic penetration depth λ. 8 Li 's strong dipole–dipole coupling with the host 93 Nb nuclei provided a "cross-relaxation" channel that dominated in low magnetic fields, which conferred indirect sensitivity to the local magnetic field via the spin-lattice relaxation (SLR) rate 1 / T 1. From a fit of the 1 / T 1 data to a model accounting for its dependence on temperature, magnetic field, and 8 Li + implantation energy, we obtained a magnetic penetration depth λ 0 = 51.5(22) nm, consistent with a relatively short carrier mean-free-path ℓ = 18.7(29) nm typical of similarly prepared Nb films. The results presented here constitute an important step toward using 8 Li β -NMR to characterize bulk Nb samples with engineered surfaces, which are often used in the fabrication of particle accelerators. [ABSTRACT FROM AUTHOR]

Atomic layer deposition is a key technique for preparing large area uniformity, three-dimensional conformal, and ultrathin films due to its sequential self-limiting saturated chemisorption properties. Electric fields of varying magnitudes and directions were applied on Si, Al2O3, Au, and Ni substrates in Pt plasma enhanced atomic layer deposition processes. Studying the influences of electric fields on the initial nucleation and growth of Pt films on different substrates helps to understand the dynamic knowledge and underlying physical mechanisms so as to obtain ultrathin, continuous films and full control over the morphology and distribution of deposited materials. The XPS results reveal that the Pt coverage rate increases on all substrates with applied voltages. The induced dipole moment causes the (MeCp)PtMe3 molecule to rotate in a certain direction resulting in a more compact arrangement, and the energy generated by electric fields also helps the dissociation of methyl, ethyl, Cp, and MeCp ligands, which greatly mitigate the spatial site resistance effect, thus improving initial monolayer chemisorption efficiency and the Pt coverage. We also find that Pt prefers to grow in the (111) direction due to the increase in adsorption of (MeCp)PtMe3 molecules caused by the gradient forces under electric fields. However, applied electric fields can also influence the morphology by inducing surface diffusion and acting on plasma species. [ABSTRACT FROM AUTHOR]

Wrinkling, creasing, and folding are frequent phenomena encountered in biological and man-made bilayers made by thin films bonded to thicker and softer substrates often containing fibers. Paradigmatic examples of the latter are the skin, the brain, and arterial walls, for which wiggly cross sections are detected. Although experimental investigations on corrugation of these and analog bilayers would greatly benefit from scaling laws for prompt comparison of the wrinkling features, neither are they available nor have systematic approaches yielding to such laws ever been provided before. This gap is filled in this paper, where a uniaxially compressed bilayer formed by a thin elastic film bonded on a hyperelastic fiber-reinforced substrate is considered. The force balance at the film–substrate interface is here analytically and numerically investigated for highly mismatched film–substrates. The onset of wrinkling is then characterized in terms of both the critical strain and its corresponding wavenumber. Inspired by the asymptotic laws available for neo-Hookean bilayers, the paper then provides a systematic way to achieve novel scaling laws for the wrinkling features for fiber-reinforced highly mismatched hyperelastic bilayers. Such novel scaling laws shed light on the key contributions defining the response of the bilayer, as it is characterized by a fiber-induced complex anisotropy. Results are compared with finite element analyses and also with outcomes of both existing linear models and available ad hoc scalings. Furthermore, the amplitude, the global maximum and minimum of ruga occurring under increasing compression spanning the wrinkling, period doubling, and folding regimes are also obtained. [ABSTRACT FROM AUTHOR]

Despite widespread interest in the phase-change applications of vanadium dioxide (VO2), the fabrication of high-quality VO2 thin films with elevated transition temperatures (TIMT) and high insulator–metal-transition resistance switching still remains a challenge. This study introduces a two-step atmospheric oxidation approach to fabricate bilayer VO2−x/VO2 films on a c-plane sapphire substrate. To quantify the impact of the VO2 buffer layer, a single-layer VO2 film of the same thickness was also fabricated. The bilayer VO2−x/VO2 films, wherein the top VO2−x film was under-oxidized, demonstrated an elevation in TIMT reaching ∼97 °C, one of the highest reported to date for VO2 films and is achieved in a doping-free manner. Our results also reveal a one-order increase in resistance switching, with the optimum bilayer VO2/VO2 film exhibiting ∼3.6 orders of switching from 25 to 110 °C, compared to the optimum single-layer VO2 reference film. This is accompanied by a one-order decrease in the on-state resistance in its metallic phase. The elevation in TIMT, coupled with increased strain extracted from the XRD characterization of the bilayer film, suggests the possibility of compressive strain along the c-axis. These VO2−x/VO2 films also demonstrate a significant change in the slope of their resistance vs temperature curves contrary to the conventional smooth transition. This feature was ascribed to the rutile/monoclinic quasi-heterostructure formed due to the top VO2−x film having a reduced TIMT. Our findings carry significant implications for both the lucid fabrication of VO2 thin film devices as well as the study of phase transitions in correlated oxides. [ABSTRACT FROM AUTHOR]

Realizing an oxide thin film with proper stoichiometry is one of the most challenging objects in materials science. Owing to the growth dynamics as well as kinetics, the physical properties of thin films often differ from their bulk counterparts. Here, we report pulsed laser-deposited thin films of LaBO3 (B = Mn, Fe, Co) grown on a SrTiO3 (001) substrate under various thermodynamic conditions. Structural, magnetic, and optical studies have been carried out. The x-ray diffraction study confirms that an appropriate choice of growth thermodynamics may help one to realize epitaxially grown films on the SrTiO3 substrate with out-of-plane lattice parameters 3.976, 3.984, and 3.825 Å for LaMnO3 (LMO), LaFeO3 (LFO), and LaCoO3 (LCO), respectively. A mixed valence state of Mn2+, 3+, 4+ for LMO, a Fe3+ state for LFO, and a mixed state of Co2+, 3+ for LCO have been confirmed by x-ray photoelectron spectroscopy, which is in good agreement with the Ellingham diagram. The optical study showed a bandgap of 1.2, 2.5, and 1.5 eV for LMO, LFO, and LCO, respectively. Ultraviolet photoelectron spectroscopy (UPS) shows a glimpse of the valence band maximum and Fermi level position. UV, UPS, and photoconductive study simultaneously results in a type II band bending, i.e., staggered type bending is observed at these interfaces. Room temperature weak ferromagnetism along with the insulating nature and a sign of photovoltaic application of these thin films fascinate to carry forward rigorous study from fundamental as well as technological points of view. [ABSTRACT FROM AUTHOR]

In recent years, the implementation of thin-film Ta has led to improved coherence times in superconducting circuits. Efforts to further optimize this materials set have become a focus of the subfield of materials for superconducting quantum computing. It has been previously hypothesized that grain size could be correlated with device performance. In this work, we perform a comparative grain size experiment with α -Ta on c axis sapphire. Our evaluation methods include both room-temperature chemical and structural characterization and cryogenic microwave measurements, and we report no statistical difference in device performance between smaller- and larger-grain-size devices with grain sizes of 924 and 1700 nm 2 , respectively. These findings suggest that grain size is not correlated with loss in the parameter regime of interest for Ta grown on c axis sapphire, narrowing the parameter space for optimization of this materials set. [ABSTRACT FROM AUTHOR]

Ge 2 Sb 2 Te 5 (GST), a phase change material, generally exhibits two-step crystallization (amorphous → fcc → hcp) to store and process data. The present study reports the crystallization behavior and bonding mechanism of Ga-doped GST thin films with thermal annealing. Ga doping results in the formation of Ga–Te bonds and shows no bonding with other host elements (Ge and Sb), which changes the bonding mechanism and leads to one-step crystallization (amorphous → fcc). The optical transmission contrast confirmed the thermal stabilization of the fcc phase with thermal annealing. These findings suggest that Ga doping into GST thin films has thermally stabilized the metastable fcc phase and suppressed the hcp phase, hence posing it as a potential candidate for phase change memory applications with fast processing speed and low power consumption. [ABSTRACT FROM AUTHOR]

The epitaxial growth of boron rich hexagonal zirconium diborides (h-ZrB2+δ) thin films on Si(111) substrates using the magnetron co-sputtering technique with elemental zirconium and boron is reported. The effect of process temperature (700–900 °C) on the compositions and epitaxy quality was investigated. The chemical composition of the films was found to have a higher boron to zirconium ratio than the ideal stoichiometric AlB2-type ZrB2 and was observed to be sensitive to process temperature. Films deposited at 700 °C exhibited intense diffraction peaks along the growth direction corresponding to (000ℓ) of h-ZrB2 using both lab and synchrotron-based x-ray diffractograms. The thermal and compositional stability of the epitaxial h-ZrB2+δ film was further evaluated under a nitrogen-rich environment through isothermal annealing which showed a reduction in in-plane misorientation during thermal annealing. The relative stability of deviating compositions and the energetics of impurity incorporations were analyzed using density functional theory simulations, and the formation of native point defects or impurity incorporation in h-ZrB2 was found to be endothermic processes. Our experimental results showed that an epitaxial thin film of h-ZrB2+δ can be grown on Si(111) substrate using a magnetron co-sputtering technique at a relatively low processing temperature (700 °C) and has the potential to be used as a template for III-nitride growth on Si substrates. [ABSTRACT FROM AUTHOR]

The stability of holes in solid thin films is crucial, as an absence of holes is necessary in some applications and holes are needed in others. We develop an axisymmetric two grain model with a central hole, with surface diffusion governing the exterior surfaces and mean curvature motion governing the grain boundary. The model can exhibit grooving, wetting, dewetting, as well as void, hole, and hillock formation. Here, we extend an earlier work [Zigelman and Novick-Cohen, J. Appl. Phys. 130, 175301 (2021)], where it was shown for an axisymmetric single grain system with a hole at the center that there exists a critical effective radius, which is independent of the contact angle. The stability of the steady states, which consist of coupled nodoidal and catenoidal surfaces, is analyzed numerically by imposing the steady state configurations as initial conditions. This approach yields stability criteria in terms of (i) the effective energy, (ii) the ratio between the maximal thickness of the inner and outer grains, (iii) a generalized effective radius, and (iv) the ratio between the mean curvature of the exterior surfaces and the total volume of the system. Some of these criteria partially reflect the Rayleigh stability criterion. Hillock formation tends to be stabilizing. Modes of instability include growth of one grain at the expense of the other, breakup induced by grooving, and hole closure. [ABSTRACT FROM AUTHOR]

Barkhausen noise is a type of magnetic noise that occurs due to the interaction of domain walls with defects. In magnetic sensor applications, this can be a detrimental phenomenon since it disturbs the signal. We study this noise using coupled micro-magneto-mechanical finite element simulations. To this end, we consider in the first step a thermodynamically consistent material model within the generalized standard material approach. In our material model, we include exchange, anisotropy, demagnetizing, Zeeman, and elastic energy. The coupling between mechanics and micro-magnetics is implemented via a magnetostrictive strain contribution. In the following step, we extend the material model to represent the full Landau–Lifschitz–Gilbert magnetization dynamics. For the model extension, we give a detailed exposition of the finite element implementation. In particular, we use a new modified leapfrog/Crank–Nicolson time integration scheme, which preserves the magnetization magnitude exactly. Furthermore, we showcase in detail the scheme for applying our material model to noise computation (based on ensemble averaging). Finally, we investigate various numerical examples based on the magnetostrictive material FeCoSiB to illustrate the different features of our approach. [ABSTRACT FROM AUTHOR]

This work investigates the structural properties of HgCdTe thin films grown on InSb (211)B substrates using molecular beam epitaxy (MBE). The Cd composition of thin films is accurately determined using non-destructive approaches based on x-ray diffraction (XRD) and reflectance infrared spectroscopy. The as-grown HgCdTe thin films exhibit characteristic surface defects with a size of 7–10 μm and density of ∼105 cm−2, resulting in an additional spread in XRD full width at half maximum. Cross-sectional transmission electron microscopy results indicate that these defects are caused by surface In droplet formation during the oxide removal process of InSb substrate, which subsequently results in the formation of In4Te3 inclusions and extended defects in MBE-grown HgCdTe. Our findings provide additional confirmation that suppressing thermally induced damage of the InSb substrate is necessary for fabricating high-performance infrared detectors using HgCdTe grown on InSb substrates. [ABSTRACT FROM AUTHOR]

Femtosecond laser excitation of crystal materials can produce coherent longitudinal acoustic phonons (CLAPs), which possess the capability to interact with various quasiparticles and influence their dynamics. The manipulation of CLAPs' behavior is thus of significant interest for potential applications, particularly in achieving ultrafast modulations of material properties. In this study, we present our findings on the propagation of laser-induced CLAPs at thin-film interfaces and heterojunctions using ultrafast optical reflectivity and ultrafast x-ray diffraction measurements. We observe that CLAPs can efficiently propagate from a LaMnO3 thin-film to its SrTi O 3 substrate due to the matching of their acoustic impedance, and the oscillation period increases from 54 to 105 GHz. In contrast, in ultrafast x-ray diffraction experiments, we discover that CLAPs are partially confined within an Au (111) thin film due to the mismatch of acoustic impedance with the substrates, leading to an oscillation period of 122 ps. However, interestingly, when examining L a 0.7 C a 0.175 S r 0.125 Mn O 3 / B a 0.5 S r 0.5 Ti O 3 bilayers, no oscillations are observed due to the favorable impedance matching between the layers. Our findings demonstrate that acoustic impedance can serve as an effective means to control coherent phonons in nanometer-thin films and may also play a crucial role in phonon engineering at interfaces or heterostructures. [ABSTRACT FROM AUTHOR]

The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials. [ABSTRACT FROM AUTHOR]

The chemical solution-deposited zinc ferrite (ZFO; ZnFe2O4) RRAM devices on Pt/Ti/SiO2/Si substrate are being reported. Fabricated devices show the positive as well as negative unipolar switching memory properties. Thickness of ZFO thin films in Au/ZFO/Pt structure was varied to explore the resistive switching behavior. It is reported that forming voltage and resistance of the device increase by increasing the number of ZFO layers. Our results reveal that ZFO thin film deposited by eight times spin coating with a thickness of eight layers illustrates stable resistive switching with the most steady Set (2 V) and Reset voltages (0.5 V) as compared to the devices with two, four, and six layers. It also demonstrates the enhanced endurance of greater than 300 switching cycles and stable time-dependent resistance greater than 104 s. The current transport mechanism is Ohmic at low-resistance state, while it leads to Schottky emission at high-resistance state. The possible switching mechanism is also discussed for the possible application of ZFO-based memory for nonvolatile RRAM devices. [ABSTRACT FROM AUTHOR]