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Unravelling the doping mechanism and origin of carrier limitation in Ti-doped In2O3 films.
- Source :
-
Journal of Applied Physics . 1/7/2024, Vol. 135 Issue 1, p1-9. 9p. - Publication Year :
- 2024
-
Abstract
- Ti-doped In 2 O 3 thin films with varying Ti contents are prepared by partial reactive co-sputtering using ceramic In 2 O 3 and metallic Ti targets and characterized by in situ x-ray photoelectron spectroscopy, electrical conductivity, and Hall-effect measurements. For a substrate temperature of 400 ° C , the carrier concentration increases faster than the Ti content and saturates at ≈ 7.4 × 10 20 c m − 3 . Based on these results, it is suggested that Ti does not directly act as donor in In 2 O 3 but is rather forming TiO 2 precipitates and that the related scavenging of oxygen generates oxygen vacancies in In 2 O 3 as origin of doping. Neutralization of oxygen vacancies is, therefore, suggested to be origin of the limitation of the carrier concentration in Ti-doped In 2 O 3 films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 135
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 174637083
- Full Text :
- https://doi.org/10.1063/5.0175864