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296 results on '"Steudel, Soeren"'

101. 54‐3: Distinguished Paper:High Temperature Thin‐Film Barriers for Foldable AMOLED Displays

Author

Akkerman, Hylke, Pendyala, Raghu, Panditha, Pradeep, Salem, Ahmed, Shen, Jie, Weijer, Peter, Bouten, Piet, Winter, Suzanne, Diesen-Tempelaars, Karin, Haas, Gerard, Steudel, Soeren, Huang, Ching-Yu, Lai, Ming-Hsiang, Huang, Yen-Yu, Yeh, Ming-Hua, Kronemeijer, Auke Jisk, Poodt, Paul, and Gelinck, Gerwin

Abstract

We present a thin‐film dual‐layer bottom barrier on PI that is compatible with 350°C backplane processing for OLED displays. We demonstrate OLEDs that survive bending over 0.5 mm radius for 10.000x. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating AMOLED displays on GEN1‐sized substrates.

Published
2018
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102. 75‐1: Distinguished Paper:High Resolution Photolithography for Direct View AMOLED AR Displays

Author

Malinowski, Paweł E., Ke, Tung-Huei, Nakamura, Atsushi, Liu, Ya-Han, Velpen, Dieter Vander, Vandenplas, Erwin, Papadopoulos, Nikolas, Kronemeijer, Auke Jisk, van der Steen, Jan Laurens, Steudel, Soeren, Kuo, Che-Cheng, Huang, Yen-Yu, Chen, Yu-Hsien, Yeh, Ming-Hua, Gelinck, Gerwin, and Heremans, Paul

Abstract

High resolution RGB OLED frontplane is a key enabler for direct‐view transparent AR displays. 1250 ppi passive displays and semi‐transparent active displays are shown. T90 lifetime at 1000 nit is above 150 hours after patterning. OLED photolithography can provide pixel density above 1000 ppi while keeping high aperture ratio.

Published
2018
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103. Integrated UHF a-IGZO energy harvester for passive RFID tags

Author

Chasin, Adrian, primary, Volskiy, Vladimir, additional, Libois, Michael, additional, Ameys, Marc, additional, Nag, Manoj, additional, Rockele, Maarten, additional, Myny, Kris, additional, Steudel, Soeren, additional, Schols, Sarah, additional, Vandenbosch, Guy A. E., additional, de Raedt, Walter, additional, Genoe, Jan, additional, Gielen, Georges, additional, and Heremans, Paul, additional

Published
2013
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106. Noise-Margin Analysis for Organic Thin-Film Complementary Technology

Author

UCL, Bode, Dieter, Rolin, Cedric, Schols, Sarah, Debucquoy, Maarten, Steudel, Soeren, Gelinck, Gerwin H., Genoe, Jan, Heremans, Paul, UCL, Bode, Dieter, Rolin, Cedric, Schols, Sarah, Debucquoy, Maarten, Steudel, Soeren, Gelinck, Gerwin H., Genoe, Jan, and Heremans, Paul

Abstract

Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor parameter variations for C-TFT and compare it to unipolar logic. First, a basic inverter model is developed and fitted to measured transfer characteristics of organic complementary inverters. Next, the inverter model is used in numerical simulations to determine how the noise margin of the inverter, a measure for its reliable operation, changes as a function of transistor parameter variations. The noise margin is significantly improved with respect to p-type-only inverters with similar parameters. Finally, we perform circuit-level yield predictions as a function of parameter spread using the noise-margin simulations performed earlier.

Published
2010

107. Gigahertz Operation of a-IGZO Schottky Diodes

Author

Chasin, Adrian, primary, Nag, Manoj, additional, Bhoolokam, Ajay, additional, Myny, Kris, additional, Steudel, Soeren, additional, Schols, Sarah, additional, Genoe, Jan, additional, Gielen, Georges, additional, and Heremans, Paul, additional

Published
2013
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108. Novel back‐channel‐etch process flow based a‐IGZO TFTs for circuit and display applications on PEN foil

Author

Nag, Manoj, primary, Rockele, Maarten, additional, Steudel, Soeren, additional, Chasin, Adrian, additional, Myny, Kris, additional, Bhoolokam, Ajay, additional, Willegems, Myriam, additional, Smout, Steve, additional, Vicca, Peter, additional, Ameys, Marc, additional, Ke, Tung Huei, additional, Schols, Sarah, additional, Genoe, Jan, additional, van der Steen, Jan‐Laurens P. J., additional, Groeseneken, Guido, additional, and Heremans, Paul, additional

Published
2013
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109. Paper No 19.3: Back‐Channel‐Etch Process Flow for a‐IGZO TFTs

Author

Nag, Manoj, primary, Steudel, Soeren, additional, Chasin, Adrian, additional, Myny, Kris, additional, Rockele, Maarten, additional, Bhoolokam, Ajay, additional, Willegems, Myriam, additional, Smout, Steve, additional, Vicca, Peter, additional, Ameys, Marc, additional, Schols, Sarah, additional, Cheyns, David, additional, Genoe, Jan, additional, van der Steen, Jan‐Laurens, additional, Tempelaars, Karin, additional, Groeseneken, Guido, additional, and Heremans, Paul, additional

Published
2013
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110. 18.4L:Late-News Paper: Full Color Flexible Top-emission AMOLED Display on Polyethylene Naphthalate (PEN) Foil with Metal Oxide TFTs Backplane

Author

Fukui, Yusuke, primary, Shibata, Masaomi, additional, Tanaka, Yuji, additional, Okumoto, Kenji, additional, Morita, Kiyoyuki, additional, Otake, Keiichi, additional, Tripathi, Ashutosh Kumar, additional, van der Putten, Bas, additional, van der Steen, Jan-Laurens, additional, Tempelaars, Karin, additional, van Leuken, Linda, additional, Li, Flora, additional, Yakimets, Iryna, additional, Gelinck, Gerwin, additional, Myny, Kris, additional, Smout, Steve, additional, Willegems, Myriam, additional, Schols, Sarah, additional, Steudel, Soeren, additional, Genoe, Jan, additional, and Heremans, Paul, additional

Published
2013
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111. UHF IGZO Schottky diode

Author

Chasin, Adrian, primary, Steudel, Soeren, additional, Vanaverbeke, Fre, additional, Myny, Kris, additional, Nag, Manoj, additional, Ke, Tung-Huei, additional, Schols, Sarah, additional, Gielen, Georges, additional, Genoe, Jan, additional, and Heremans, Paul, additional

Published
2012
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113. Solution‐processed and low‐temperature metal oxide n‐channel thin‐film transistors and low‐voltage complementary circuitry on large‐area flexible polyimide foil

Author

Rockelé, Maarten, primary, Pham, Duy‐Vu, additional, Steiger, Jürgen, additional, Botnaras, Silviu, additional, Weber, Dennis, additional, Vanfleteren, Jan, additional, Sterken, Tom, additional, Cuypers, Dieter, additional, Steudel, Soeren, additional, Myny, Kris, additional, Schols, Sarah, additional, van der Putten, Bas, additional, Genoe, Jan, additional, and Heremans, Paul, additional

Published
2012
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114. A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz

Author

Raiteri, Daniele, primary, Torricelli, Fabrizio, additional, Myny, Kris, additional, Nag, Manoj, additional, Van der Putten, Bas, additional, Smits, Edsger, additional, Steudel, Soeren, additional, Tempelaars, Karin, additional, Tripathi, Ashutosh, additional, Gelinck, Gerwin, additional, Van Roermund, Arthur, additional, and Cantatore, Eugenio, additional

Published
2012
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115. Design Methodologies for Organic RFID Tags and Sensor Readout on Foil

Author

Myny, Kris, primary, Marien, Hagen, additional, Steudel, Soeren, additional, Vicca, Peter, additional, Beenhakkers, Monique J., additional, van Aerle, Nick A.J.M., additional, Gelinck, Gerwin H., additional, Genoe, Jan, additional, Dehaene, Wim, additional, Steyaert, Michiel, additional, Heremans, Paul, additional, and Cantatore, Eugenio, additional

Published
2012
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122. Thin-film transistors and circuits on plastic foil

Author

Heremans, Paul, primary, Genoe, Jan, additional, Steudel, Soeren, additional, Myny, Kris, additional, Smout, Steve, additional, Vicca, Peter, additional, Grillberger, Christiane, additional, Hild, Olaf R., additional, Furthner, Francois, additional, van der Putten, Bas, additional, Tripathi, Ashutosh K., additional, and Gelinck, Gerwin H., additional

Published
2009
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136. 50 MHz rectifier based on an organic diode

Author

Steudel, Soeren, primary, Myny, Kris, additional, Arkhipov, Vladimir, additional, Deibel, Carsten, additional, De Vusser, Stijn, additional, Genoe, Jan, additional, and Heremans, Paul, additional

Published
2005
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143. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer.

Author

Nag, Manoj, Steudel, Soeren, Bhoolokam, Ajay, Chasin, Adrian, Rockele, Maarten, Myny, Kris, Maas, Joris, Fritz, Thomas, Trube, Jutta, Groeseneken, Guido, and Heremans, Paul

Subjects
*THIN film transistors, *INDIUM gallium zinc oxide, *SILICA, *PHYSICAL vapor deposition, *AMORPHOUS semiconductors, *SEMICONDUCTOR etching
Abstract

In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of 16.0 cm2/(V.s), sub-threshold slope (SS−1) of 0.23 V/decade and off-currents (IOFF) < 1.0 pA. The TFTs with mf-PVD SiO2 ESL deposited at room temperature were compared with TFTs made with the conventional plasma-enhanced chemical vapor deposition (PECVD) SiO2 ESL deposited at 300 °C and at 200 °C. The TFTs with different ESLs showed a comparable performance regarding μFE, SS−1, and IOFF, however, significant differences were measured in gate bias-stress stability when stressed under a gate field of +/−1 MV/cm for duration of 104 s. The TFTs with mf-PVD SiO2 ESL showed lower threshold-voltage (VTH) shifts compared with TFTs with 300 °C PECVD SiO2 ESL and TFTs with 200 °C PECVD SiO2 ESL. We associate the improved bias-stress stability of the mf-PVD SiO2 ESL TFTs to the low hydrogen content of the mf-PVD SiO2 layer, which has been verified by Rutherford-Back-Scattering-Elastic-Recoil-Detection technique. [ABSTRACT FROM AUTHOR]

Published
2014
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144. Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors

Author

Bhoolokam, Ajay, Nag, Manoj, Chasin, Adrian, Steudel, Soeren, Genoe, Jan, Gelinck, Gerwin, Groeseneken, Guido, and Heremans, Paul

Abstract

It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain this. Multi-frequency analysis techniques for trap density distribution use a lumped series resistance model and attribute dispersion solely to the charging and discharging of trap states. As the resistance–capacitance (RC) time constant values of the IGZO TFTs are in the range of 10–100 µs, a distributed RC network is better suited for the measured frequency range (1 kHz–1 MHz).

Published
2015
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145. Paper No 19.3: Back‐Channel‐Etch Process Flow for a‐IGZO TFTs.

Author

Steudel, Soeren, Myny, Kris, Willegems, Myriam, Smout, Steve, Vicca, Peter, Ameys, Marc, Schols, Sarah, Cheyns, David, Genoe, Jan, Nag, Manoj, Chasin, Adrian, Rockele, Maarten, Bhoolokam, Ajay, Groeseneken, Guido, Heremans, Paul, van der Steen, Jan‐Laurens, and Tempelaars, Karin

Subjects
THIN film transistors, INDIUM gallium zinc oxide
Abstract

Abstract: In this study, the authors report high‐quality amorphous Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) thin film transistors (TFTs) fabricated using a new back‐channel‐etch (BCE) process flow on Polyethylene Naphthalate (PEN) foil. The BCE flow allows a better scalability of TFTs for high‐resolution backplanes and related circuits. The maximum processing temperature was limited to less than 165oC in order to ensure good overlay accuracy (< 1µm) on foil. The presented process flow differs from to previously reported by defining the Mo S/D contacts by dry etch prior to a‐IGZO patterning. The TFTs show good electrical performance, including field‐effect mobilities in the range of 15.0cm2/(V.s), sub‐threshold slopes of 0.3V/decade and off‐currents <1.0pA on foil. Finally, the applicability of this new BCE process flow was demonstrated for TFT backplane driving a 32 x 32 active‐matrix organic light‐emitting diode (AMOLED) display. [ABSTRACT FROM AUTHOR]

Published
2013
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146. 18.4L: Late-News Paper: Full Color Flexible Top-emission AMOLED Display on Polyethylene Naphthalate (PEN) Foil with Metal Oxide TFTs Backplane.

Author

Fukui, Yusuke, Shibata, Masaomi, Tanaka, Yuji, Okumoto, Kenji, Morita, Kiyoyuki, Otake, Keiichi, Tripathi, Ashutosh Kumar, Putten, Bas, Steen, Jan-Laurens, Tempelaars, Karin, Leuken, Linda, Li, Flora, Yakimets, Iryna, Gelinck, Gerwin, Myny, Kris, Smout, Steve, Willegems, Myriam, Schols, Sarah, Steudel, Soeren, and Genoe, Jan

Subjects
ACTIVE-matrix liquid crystal displays, OPTICAL resolution, OPTICAL properties, COLOR temperature, GEOMETRICAL optics
Abstract

We have developed a full color flexible top-emission AMOLED display with 80 ppi resolution using In-Ga-Zn-O TFT backplane on PEN foil under the maximum process temperature of 150 oC. Notwithstanding the low processing temperature, the TFTs with SiOx passivation layer show high reliability with VTH shift of less than 0.2 V at 10,000 seconds under bias-stress of −10 V. [ABSTRACT FROM AUTHOR]

Published
2013
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147. (Invited) Towards EPC Compatible Plastic RFID Tags

Author

Myny, Kris, Steudel, Soeren, Vicca, Peter, Smout, Steve, Beenhakkers, Monique J., A, Nick, Aerle, Van, Furthner, Francois, Van, Bas, Putten, der, Tripathi, Ashutosh K., Gelinck, Gerwin H., Genoe, Jan, Dehaene, Wim, and Heremans, Paul

Abstract

A target application for plastic RFID tags is Electronic Product Coding (EPC). The EPC-specifications set some demanding requirements for RFID tags. In this work, we review the work that has been done to fulfill some of these specifications. We describe a complete 64-bit RFID tag that is inductively-coupled at a base carrier frequency of 13.56 MHz, and transmits data at rates below 1 kb/s. Next, we demonstrate 8-bit RFID transponder chips having data rates of 50 kb/s, an important milestone for organic RFID tags in view of EPC specifications.

Published
2010

148. A low-temperature-cross-linked poly(4-vinylphenol) gate-dielectric for organic thin film transistors

Author

Vicca, Peter, Steudel, Soeren, Smout, Steve, Raats, Arne, Genoe, Jan, and Heremans, Paul

Subjects
*PHENOLS, *ORGANIC thin films, *THIN film transistors, *LOW temperatures, *MICROELECTRONICS, *EXPERIMENTAL design, *CHEMICAL reactions
Abstract

Abstract: We present experimental results using an alternative cross-linker for poly(4-vinylphenol) (PVP) that allows lowering of the thermal budget of the cross-linking reaction to 130°C which compares very favorable to the 180°C required by the commonly used cross-linking agent poly(melamine-co-formaldehyde). Furthermore, we characterize the dielectric properties of a 200nm thick layer and realize high quality organic thin film transistors using this low-temperature PVP as a gate-dielectric. [ABSTRACT FROM AUTHOR]

Published
2010
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149. Low-Frequency Noise in InGaZnO Thin-Film Transistors with Al2O3 Gate Dielectric

Author

Londoño Ramírez, Horacio, Chien, Yu-Chieh, Hoffman, Luis, Nag, Manoj, Haesler, Sebastian, Steudel, Soeren, Genoe, Jan, and Enz, Christian

Abstract

ispartof: ICNF 2019 (25th International Conference on Noise and Fluctuations) ispartof: ICNF 2019 (25th International Conference on Noise and Fluctuations) location:Neuchâtel, Switzerland status: Published online

150. Thin and spherical-cap-shaped LCD with a flexible thin-film driver for use in a smart contact lens

Author

Herbert De Smet, Roose, Florian, Steudel, Soeren, Myny, Kris, Willegems, Myriam, Smout, Steve, Ameys, Marc, Malinowski, Pawel E., Gehlhaar, Robert, Poduval, Radhika Kallidil, Chen, Xinyu, Smet, Jelle, Andrés Vásquez Quintero, Dehaene, W., and Genoe, Jan

Abstract

ispartof: Society for Information Display Mid-Europe Chapter Spring Meeting location:Dresden date:12 Mar - 13 Mar 2017 status: published

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