Medium Frequency Physical Vapor Deposited Al2O3 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors.

Details

Language :

English

ISSN :

21628769

Volume :

4

Issue :

5

Database :

Complementary Index

Journal :

ECS Journal of Solid State Science & Technology

Publication Type :

Academic Journal

Accession number :

102478091

Full Text :

https://doi.org/10.1149/2.0201505jss