1,008 results on '"Shiraishi, Kenji"'
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102. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO
103. Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices
104. Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface
105. Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE
106. Oxygen Incorporation Kinetics in Vicinal m (10−10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy
107. Geospatial, Statistical Approach for Multi-Criteria Analysis of Renewable Energy Potential: A Case Study on Japan’s Onshore Wind
108. A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics
109. Theoretical Investigation of Effective Quantum Dots Induced by Strain in Semiconductor Wires
110. A ribonucleotide reductase gene involved in a p53-dependent cell-cycle checkpoint for DNA damage
111. Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces
112. Asymmetric Distribution of Charge Trap in HfO2-Based High-k Gate Dielectrics
113. Role of the Ionicity in Defect Formation in Hf-Based Dielectrics
114. Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics
115. Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams
116. Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electrodes on HfSiON by Employing Ru Gate Electrodes
117. Microscopic Understanding of PBTI and NBTI Mechanisms in High-k / Metal Gate Stacks
118. Theoretical Studies on Metal/High-k Gate Stacks
119. Tight Distribution of Dielectric Characteristics of HfSiON in Metal Gate Devices
120. Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS
121. Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process
122. Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-k Gate Stacks
123. (Invited) Atomistic Guideline for MONOS-Type Memories with High Program/Erase Cycle Endurance
124. Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices
125. Control of Gate Metal Effective Work Functions and Interface Layer Thickness by Designing Interface Thermodynamics Based on Heteroatom Incorporation into High-k HfO2 Gate Dielectrics
126. (Invited) Negatively Charged Defects Generated by Rare-Earth Materials Incorporation into HfO2 and the Impact on the Gate Dielectrics Reliability
127. (Invited) Degradation in HfSiON Film Induced by Electrical Stress Application
128. Investigation of the New Physical Model of Ohmic Contact for Future Nanoscale Contacts
129. Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures
130. Si Nanowire FET Technology
131. (Invited) Efficient Guiding Principle of Highly Scalable MONOS-Type Memories
132. Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000$\bar{{\bf{1}}}$), and (1$\bar{{\bf{1}}}$00) surfaces
133. First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide
134. Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring
135. Required area of lymph node sampling during segmentectomy for clinical stage IA non–small cell lung cancer
136. Sialadenoma papilliferum of the bronchus: Rare tracheobronchial tumor of salivary gland type
137. Theoretical investigation of phase transition on GaAs(0 0 1)-c(4 × 4) surface
138. An ab initio-based approach to Ga adatom migration on GaAs( n 1 1)A–(0 0 1) non-planar surfaces
139. Adsorptive ozonation of 2-methylisoborneol in natural water with preventing bromate formation
140. Ozone decomposition of 2-methylisoborneol (MIB) in adsorption phase on high silica zeolites with preventing bromate formation
141. Electronic Structures of Halogenated Polysilanes
142. Simulation of a GaN MOVPE Process in a Vertical Crystal Growth Apparatus
143. Microscopic mechanism of Si oxidation
144. Theoretical study on epitaxial growth of lattice-mismatched semiconductor systems
145. Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 1)-c(4 × 4) surfaces
146. Theoretical design of a semiconductor ferromagnet based on quantum dot superlattices
147. Charge-state-dependent boron diffusion in SiO2
148. Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)
149. Systematic theoretical investigations of miscibility in Si 1− x− yGe xC y thin films
150. Theoretical study on stable structures and diffusion mechanisms of B in SiO 2
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