1,662 results on '"Pearton, S.J."'
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102. Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K
103. Control of nucleation site density of GaN nanowires
104. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes
105. Hydrogen and ozone gas sensing using multiple ZnO nanorods
106. Retraction notice to “Recent progress in processing and properties of ZnO” [Prog. Mater. Sci. 50(3) (2004) 293–340]
107. Shallow donor formation in phosphorus-doped ZnO thin films
108. Contributor contact details
109. Recent advances in wide bandgap semiconductor-based gas sensors
110. Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy
111. Magnetization dependence on electron density in epitaxial ZnO thin films codoped with Mn and Sn
112. Chapter 24 - Nanosensor networks for health-care applications
113. Wide Bandgap Materials for Semiconductor Spintronics
114. Epitaxial growth of CeO2 on (100) InP using reactive r.f. magnetron sputtering
115. Ion Implantation in Group III Nitrides
116. ZrB2 Schottky diode contacts on n-GaN
117. Stability of Ti/Al/ZrB2/Ti/Au ohmic contacts on n-GaN
118. ZrB2-based Ohmic contacts to p-GaN
119. Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries
120. Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO
121. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
122. Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide
123. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
124. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
125. Neutron irradiation effects in AlGaN/GaN heterojunctions
126. Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys
127. High-density plasma etching of indium–zinc oxide films in Ar/Cl 2 and Ar/CH 4/H 2 chemistries
128. ZrB 2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO
129. Use of TiB 2 diffusion barriers for Ni/Au ohmic contacts on p-GaN
130. Comparison of CH 4/H 2 and C 2H 6/H 2 inductively coupled plasma etching of ZnO
131. Dry etching of MgCaO gate dielectric and passivation layers on GaN
132. Growth of ZnO thin films on c-plane Al 2O 3 by molecular beam epitaxy using ozone as an oxygen source
133. Annealing and measurement temperature dependence of W 2B 5-based rectifying contacts to n-GaN
134. Charge carrier and spin doping in ZnO thin films
135. Novel dielectrics for gate oxides and surface passivation on GaN
136. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique
137. Contacts to ZnO
138. Surface Conversion Effects in Plasma-Damaged p-GaN
139. High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
140. Processing and Device Performance of GaN Power Rectifiers
141. Properties and Effects of Hydrogen in GaN
142. Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
143. Photoelectrochemical Etching of InxGa1−xN
144. Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy
145. RBS Lattice Site Location and Damage Recovery Studies in GaN
146. Spectroscopy of Proton Implanted GaN
147. Prospects of Potential Semiconductor Spin Detectors
148. Contact resistivity and transport mechanisms in W contacts to p- and n-GaN
149. GaN N- and P-type Schottky diodes: Effect of dry etch damage
150. Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr
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