Back to Search Start Over

GaN N- and P-type Schottky diodes: Effect of dry etch damage

Authors :
Cao, X.A.
Pearton, S.J.
Dang, G.T.
Zhang, A.P.
Ren, F.
Van Hove, J.M.
Source :
IEEE Transactions on Electron Devices. July, 2000, Vol. 47 Issue 7, p1320, 5 p.
Publication Year :
2000

Abstract

The effects of C12/Ar and Ar plasma damage were examined using the reverse breakdown voltage and forward turn-on voltage of n- and p-GaN Schottky diodes.

Subjects

Subjects :
Diodes, Schottky-barrier -- Research
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
47
Issue :
7
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.64753522

Tools

Authors Abstract Subjects Details