101. Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulation
- Author
-
M. Tomizawa, K. Yokoyama, and A. Yoshii
- Subjects
Physics ,Fabrication ,business.industry ,Monte Carlo method ,Schottky diode ,Electronic, Optical and Magnetic Materials ,Gallium arsenide ,chemistry.chemical_compound ,chemistry ,Velocity overshoot ,Electronic engineering ,Optoelectronics ,MESFET ,Field-effect transistor ,Transient response ,Electrical and Electronic Engineering ,business - Abstract
Device characteristics, including nonstationary carrier-transport effects such as velocity overshoot phenomena in submicrometergate Si and GaAs MESFET's, are presented in detail by two-dimensional full Monte Carlo particle simulation. Accurate current-voltage characteristics and transient current response are successfully obtained without relaxation time approximation. Moreover, the carrier dynamics influence on device operation is clarified in a realistic device model, compared with the conventional simulation. It can be pointed out that such nonstationary carrier transport is acutely important for accurate modeling of submicrometer-gate GaAs MESFET's, but is not as important for that of Si MESFET's.
- Published
- 1983