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308 results on '"Kolawa, E."'

126. Investigation of the Four-Gate Action in G4-FETs.

Author

Dufrene, B., Akarvardar, K., Cristoloveanu, S., Blalock, B. J., Gentil, P., Kolawa, E., and Mojarradi, M. M.

Subjects
SILICON, TRANSISTORS, NUMERICAL analysis, ELECTRIC insulators & insulation, ELECTRIC conductivity, SWITCHING circuits
Abstract

The four-gate silicon-on-insulator transistor (G4 -FET) combines MOS and JFET actions in a single transistor to control the drain current. The various operation modes of the G4-FET are analyzed based on the measured current-voltage, transconductance and threshold characteristics. The main parameters (threshold voltage, swing, mobility) are extracted and shown to be optimized for particular combinations of gate biasing. Numerical simulations are used to clarify the role of volume or interface conduction mechanisms. Besides excellent performance (such as subthreshold swing and transconductance) and unchallenged flexibility, the new device has the unique feature to allow independent switching by its four separate gates, which inspires many innovative applications. [ABSTRACT FROM AUTHOR]

Published
2004
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130. Properties of reactively sputtered Mo1−xOx films

Author

So, F. C. T., Kolawa, E., Nieh, S. C. W., Zhao, X. -A., and Nicolet, M. -A.

Abstract

Molybdenum oxide (Mo1-xOx) films were prepared by reactive rf sputtering of a Mo target in O2/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the Mo1-xOx films decreases with sputtering power and increases with the partial pressure of oxygen. Mo1-xOx films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting Mo1-xOx is compressive. Such M1-xOx films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min.

Published
1988
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132. Properties of reactively sputtered MoO films.

Author

So, F., Kolawa, E., Nieh, S., Zhao, X., and Nicolet, M.

Abstract

Molybdenum oxide (MoO) films were prepared by reactive rf sputtering of a Mo target in O/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the MoO films decreases with sputtering power and increases with the partial pressure of oxygen. MoO films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting MoO is compressive. Such MO films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min. [ABSTRACT FROM AUTHOR]

Published
1988
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133. Indium oxide diffusion barriers for Al/Si metallizations.

Author

Kolawa, E., Garland, C., Tran, L., Nieh, C. W., Molarius, J. M., Flick, W., Nicolet, M-A., and Wei, J.

Subjects
*THIN films, *METALLIZING, *ALUMINUM, *SILICON, *SPUTTERING (Physics)
Abstract

Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in /In2O3/Al and /TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross-sectional Si/In2O3/Al specimens, and electrical measurements on shallow n+-p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100-nm-thick In2O3 layers prevent the intermixing between Al and Si in /In2O3/Al contacts up to 650 °C for 30 min, which makes this material one of the best thin-film diffusion barriers on record between Al and Si. (The Si-Al eutectic temperature is 577 °C, Al melts at 660 °C.) When a contacting layer of titanium silicide is incorporated to form a /TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600 °C for 30 min heat treatment. [ABSTRACT FROM AUTHOR]

Published
1988
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136. Properties of Reactively Sputtered WNx Films

Author

CALIFORNIA INST OF TECH PASADENA, Kolawa, E, So, F C, Zhao, X -A, Nicolet, M-A, CALIFORNIA INST OF TECH PASADENA, Kolawa, E, So, F C, Zhao, X -A, and Nicolet, M-A

Abstract

Tungsten nitride (WNX) films were prepared by reactive rf sputtering of a tungsten target in N2/Ar plasma. The resistivity, intrinsic stress and atomic composition of the films were studied as functions of various sputtering parameters: sputtering power, gas pressure, gas composition and substrate bias. The atomic percentage of nitrogen (x) of the WNX films was found to decrease with sputtering power and to increase with the partial pressure of nitrogen. The intrinsic stress if WNX is compressive. The dependence of film properties upon sputtering parameters for WNX differs significantly from that of reactively sputtered TiN films, and may be attributed to the difference in the formation mechanisms of TiN and WNX.

Published
1987

137. Reactively sputtered RuO2 diffusion barriers

Author

Kolawa, E., So, F. C. T., Pan, E. T-S., Nicolet, M.-A., Kolawa, E., So, F. C. T., Pan, E. T-S., and Nicolet, M.-A.

Abstract

The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with Si/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600°C.

Published
1987

138. Sputtered W–N diffusion barriers

Author

Kattelus, H. P., Kolawa, E., Affolter, K., Nicolet, M.-A., Kattelus, H. P., Kolawa, E., Affolter, K., and Nicolet, M.-A.

Abstract

The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W–N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 °C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W–N alloys can effectively prevent interdiffusion at temperatures as high as 800 °C for 30 min.

Published
1985

139. Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers

Author

So, F. C. T., Kolawa, E., Zhao, X.-A., Pan, E. T-S., Nicolet, M.-A., So, F. C. T., Kolawa, E., Zhao, X.-A., Pan, E. T-S., and Nicolet, M.-A.

Abstract

In this report, we summarize the important aspects of the deposition behavior of RuOz and Mo-O films formed by radio frequency (rf) reactive sputtering and their diffusion barrier properties against interdiffusion in Al-Si couples.

Published
1987

140. Summary of the Boulder Entry Probe Workshop April 21-22, 2003, Boulder, Colorado, USA

Author

Young, R. E., Atkinson, D., Atreya, S., Don Banfield, Beebe, R., Bolton, S., Briggs, G., Crisp, D., Cutts, J., Drake, M., Esposito, L., Galal, K., Hubbard, W., Hunten, D., Ingersoll, A., Kerzhanovich, V., Kolawa, E., Laub, B., Li, F., Mahaffy, P., Marley, M., Owen, T., Partridge, H., Schubert, G., Spilker, T., Sprague, A., Venkatapathy, E., and Young, R.

141. Exploiting SOICMOS for the extreme environments of future space missions.

Author

Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Mojararradi, M., Cristoloveanu, S., Blalock, B., Kolawa, E., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université de Savoie - Université Joseph Fourier - Grenoble I - Institut National Polytechnique de Grenoble (INPG) - CNRS, Mojararradi, M., Cristoloveanu, S., Blalock, B., and Kolawa, E.

Abstract

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