Properties of reactively sputtered MoO films.

Molybdenum oxide (MoO) films were prepared by reactive rf sputtering of a Mo target in O/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the MoO films decreases with sputtering power and increases with the partial pressure of oxygen. MoO films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting MoO is compressive. Such MO films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min. [ABSTRACT FROM AUTHOR]