101. Characterization of Pt/a-Plane GaN Schottky Contacts Using Conductive Atomic Force Microscopy
- Author
-
Phil Geun Kang, Soo-hyon Phark, Keun Man Song, Hogyoung Kim, Dong-Wook Kim, and Heungsoo Shin
- Subjects
Materials science ,business.industry ,Plane (geometry) ,Schottky barrier ,Biomedical Engineering ,Analytical chemistry ,Schottky diode ,Bioengineering ,General Chemistry ,Conductive atomic force microscopy ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Microstructure ,Metal–semiconductor junction ,Characterization (materials science) ,Condensed Matter::Materials Science ,Optoelectronics ,General Materials Science ,business - Abstract
We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.
- Published
- 2011