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272 results on '"González-Díaz G"'

117. C–V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2 remote plasma cleaning of the InP surface.

Author

Castán, H., Dueñas, S., Barbolla, J., Redondo, E., Mártil, I., and González-Díaz, G.

Abstract

Electrical characterization of Al/SiNx:H/InP structures shows that ECR nitrogen plasma cleaning of InP surfaces gives rise to a noticeable improvement in the interface quality, whereas insulator and semiconductor bulk properties are maintained at a level sufficient to be used as the gate dielectric in MIS devices. Nitrogen plasma exposure was carried out just before the SiNx plasma deposition without vacuum breaking. To obtain interface state density and to detect deep levels in the semiconductor bulk, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of conductance transient analysis. Our results show that the plasma exposure in N2 atmospheres is a valuable and simple surface conditioning method. [ABSTRACT FROM AUTHOR]

Published
2001
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119. Experimental verification of the physics and structure of the bipolar junction transistor.

Author

Martil, I., Martin, J.M., Garciá, S., and González-Díaz, G.

Subjects
TRANSISTOR circuits
Abstract

Presents an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones, with reference to an experiment conducted. Methodology employed to conduct the experiment; Information on bipolar junction transistors; Results of the experiment.

Published
1998
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124. Assessment of total pulmonary airway resistance under mechanical ventilation

Author

Gómez Rubí Ja, González Díaz G, Martin Rubí Jc, Apezteguia C, Torres Martínez G, and Sanmartin A

Subjects
Mechanical ventilation, business.product_category, business.industry, Airway Resistance, medicine.medical_treatment, Critical Care and Intensive Care Medicine, Respiration, Artificial, Respiratory Function Tests, law.invention, Airway resistance, Pressure measurement, law, Pressure, medicine, Humans, Expiration, Ohm, Respirator, Pulmonary Ventilation, Respiratory Insufficiency, business, Lung, Respiratory minute volume, Spirometer, Biomedical engineering
Abstract

We propose a procedure for assessing the pulmonary airway resistance of patients under mechanical ventilation with a volume-cycled respirator having a sine-wave flow curve and inspiration/expiration (I/E) ratio of 1/2. This simplified procedure requires only the respirator's manometer and spirometer. The method is based on Ohm's Law, dividing the pressure difference (as shown on the manometer) between the peak value and that obtained by occluding the expiratory outlet by one-tenth of the minute volume (Vm). The relationship between the Vm and flow is obtained by calculating the height of the triangle formed by the sine wave, given that the area approximates total volume and the base is derived from the frequency and I/E ratio. This method was tested in 296 measurements on 106 patients using as a control the determination of resistance with a pneumotachograph and differential manometer placed between the patient and respirator. There was a high correlation (r = 0.96) between both procedures. To further facilitate bedside use, we have prepared a graph relating common values of Vm and pressure to resistance.

Published
1980

125. C–V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2remote plasma cleaning of the InP surface

Author

Castán, H., Dueñas, S., Barbolla, J., Redondo, E., Mártil, I., and González-Díaz, G.

Abstract

Electrical characterization of Al/SiNx:H/InP structures shows that ECR nitrogen plasma cleaning of InP surfaces gives rise to a noticeable improvement in the interface quality, whereas insulator and semiconductor bulk properties are maintained at a level sufficient to be used as the gate dielectric in MIS devices. Nitrogen plasma exposure was carried out just before the SiNxplasma deposition without vacuum breaking. To obtain interface state density and to detect deep levels in the semiconductor bulk, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of conductance transient analysis. Our results show that the plasma exposure in N2atmospheres is a valuable and simple surface conditioning method.

Published
2001
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126. Compositional analysis of amorphous SiNx: H films by ERDA and infrared spectroscopy

Author

Bohne, W., Fuhs, W., Röhrich, J., Selle, B., González‐Díaz, G., Mártil, I., Martínez, F. L., and del Prado, A.

Abstract

The composition of amorphous SiNx:H films grown by the electron cyclotron resonance (ECR) plasma method was studied by heavy‐ion elastic recoil detection analysis (ERDA) with 129Xe ion beams of 1.1 and 1.8 MeV amu−1and time‐of‐light (ToF) mass separation. This technique allows simultaneous determination of the absolute atomic concentrations and depth profiles of all involved elements, including hydrogen. Radiation damage at extended ion beam exposure was found to decrease the N/Si ratio and the hydrogen concentration. By measuring the dose dependence, this effect was quantified in order to support correction to zero dose conditions. Monitoring the damage effects by infrared (IR) spectroscopy revealed an increase of the Si–H bond density at the expense of N–H bonds. The results suggest that the damage process is initiated by breaking of N–H bonds and that recapturing of hydrogen by Si appears as an effective competitive process to hydrogen release. Combining the ERDA and IR data, the oscillator strength ratio of the N–H and Si–H stretching bands is found to be 1.4 ± 0.2. Copyright © 2000 John Wiley & Sons, Ltd.

Published
2000
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127. Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2.

Author

Toledano-Luque, M., Lucía, M. L., del Prado, A., San Andrés, E., Mártil, I., and González-Díaz, G.

Subjects
SILICON nitride, HAFNIUM oxide, SPUTTERING (Physics), OPTICAL spectroscopy, INFRARED spectroscopy, RADICALS (Chemistry)
Abstract

High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si–O bonds after the sputtering of the HfO2 film in O2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering. [ABSTRACT FROM AUTHOR]

Published
2007
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128. Isotopic study of the nitrogen-related modes in N+-implanted ZnO.

Author

Artús, L., Cuscó, R., Alarcón-Lladó, E., González-Díaz, G., Mártil, I., Jiménez, J., Wang, B., and Callahan, M.

Subjects
ZINC oxide thin films, NITROGEN isotopes, ANNEALING of crystals, ISOTOPES, OPTOELECTRONIC devices, EPITAXY
Abstract

Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, 14N and 15N, were implanted. Distinct peaks at 277 and 512 cm-1 are observed irrespective of the implanted isotope, both before and after rapid thermal annealing. The insensitivity of the mode frequencies to the implanted isotope rules out the explanation of these modes as local vibrational modes involving N motion. These modes were not detected in ZnO samples implanted with Zn+, O+, or P+, which suggests that they may be associated with distortions/defects favored by the presence of N. [ABSTRACT FROM AUTHOR]

Published
2007
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129. Study of Si+-implanted and annealed InP by means of Raman spectroscopy

Author

Cuscó, R., Ibáñez, J., Blanco, N., González-Díaz, G., and Artús, L.

Abstract

We have carried out a Raman scattering study of the lattice damage produced by 150 keV Si+implantation in InP and the subsequent lattice recovery by rapid thermal annealing (RTA). The Raman spectra show that for implantation doses usually employed for producing n-type InP, the sample is fully amorphized by the implantation. The degree of lattice recovery achieved by RTA at different temperatures in the range between 300°C and 875°C is also studied. The observation of a strong TO mode in the samples annealed at the lower temperatures indicates the existence of polycrystalline and/or misoriented regions. Second-order Raman scattering is used to obtain a more accurate estimation of the crystalline recovery, which is found to be highest for RTA at 875°C for 10s.

Published
1997
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