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103. Controllability of flatband voltage in high-k gate stack structures - remarkable advantages of La/sub 2/O/sub 3/ over HfO/sub 2/

106. Physics of interfaces between gate electrodes and high-k dielectrics

107. Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures ? Remarkable Advantages of La2O3 over HfO2 ?

113. Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection

119. Material Selection for the Metal Gate/High-k Transistors

120. DWDM 40G Transmission Over Trans-Pacific Distance (10 000 km) Using CSRZ-DPSK, Enhanced FEC, and All-Raman-Amplified 100-km UltraWave Fiber Spans

123. DWDM 40 G transmission over trans-Pacific distance (10,000 km) casing CSRZ-DPSK, enhanced FEC and all-Raman amplified 100 km UltraWave/spl trade/ fiber spans

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