524 results on '"Adelmann C"'
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102. A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability
103. Capacitance-Voltage Characterization of GaAs-Oxide Interfaces
104. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
105. P81-T Antibody Arrays for Measuring Site-Specific Protein Phosphorylation
106. Exploring alternative metals to Cu and W for interconnects: An ab initio insight
107. Engineering of Hf1−xAlxOy amorphous dielectrics for high-performance RRAM applications
108. On the scalability of doped hafnia thin films
109. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
110. Vertical alignment of GaN quantum dots stacked in multilayers
111. Experimental validation of electromigration by low frequency noise measurement for advanced copper interconnects application.
112. Strain and stacking of GaN quantum dots in multilayers
113. Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
114. Study of InP Surfaces after Wet Chemical Treatments
115. Sorafenib Suppresses JNK-Dependent Apoptosis through Inhibition of ZAK
116. Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories
117. (Invited) III-V/Oxide Interfaces Investigated with Synchrotron Radiation Photoemission Spectroscopy
118. Tunneling of holes is observed by second-harmonic generation
119. Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
120. Electron Trap Energy Distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3Layers on Silicon
121. Internal Photoemission at Interaces of ALD TaiOxInsulating Layers Deposited on Si, InP and In0.53Ga0.47As
122. CMOS-Compatible Dielectric Constant Engineering by Embedding Metallic Particles in Aluminum Oxide
123. Hafnium Aluminates Deposited by Atomic Layer Deposition: Structural Characterization by X-ray Spectroscopy
124. Charge instability of atomic-layer deposited TaSiOxinsulators on Si, InP, and In0.53Ga0.47As
125. TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM
126. Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device
127. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
128. Ferroelectricity in Gd-Doped HfO2Thin Films
129. Process study of gadolinium aluminate atomic layer deposition fromthegadolinium tris-di-isopropylacetamidinate precursor
130. Investigation of Forming and Its Controllability in Novel HfO2-Based 1T1R 40nm-Crossbar RRAM Cells
131. Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum
132. Towards barrier height modulation in HfO2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?
133. Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM
134. Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
135. TiN x / HfO 2 interface dipole induced by oxygen scavenging
136. Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing andin situcapping
137. Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O
138. Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects
139. Large‐area, catalyst‐free heteroepitaxy of InAs nanowires on Si by MOVPE
140. Investigation of rare-earth aluminates as alternative trapping materials in Flash memories
141. Optimization of the crystallization phase of Rare-Earth aluminates For blocking dielectric application in TANOS type flash memories
142. Key sub 1nm EOT CMOS enabler by comprehensive PMOS design
143. Injection and trapping of electrons in Y2O3layers on Si
144. Properties of Ultrathin High Permittivity (Nb[sub 1−x]Ta[sub x])[sub 2]O[sub 5] Films Prepared by Aqueous Chemical Solution Deposition
145. Atomic Layer Deposition of Gd-Doped HfO[sub 2] Thin Films
146. Spin injection across the Fe/GaAs interface: Role of interfacial ordering
147. Band alignment and electron traps in Y2O3 layers on (100)Si
148. Comparison of Sufentanil versus Fentanyl in Ventilated Term Neonates
149. Interdiffusion and crystallization in HfO2/Al2O3 superlattices
150. High-k/ metal-gate stack work-function tuning by rare-earth capping layers: Interface dipole or bulk charge?
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