379 results on '"Zheng, Y.D."'
Search Results
52. Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors
53. Nonvolatile memory based on Ge/Si hetero-nanocrystals
54. Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors
55. Optical properties of Mg-implanted GaN
56. Improvement of metal–ferroelectric–silicon structures without buffer layers between Si and ferroelectric films
57. Influence of C on Ge incorporation in the growth of Ge-rich Ge1−x−ySixCy alloys on Si (100)
58. SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(1 1 1) substrates
59. Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
60. Research on the Mn-implanted GaN with ferromagnetism at room temperature
61. Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-Al xGa 1− xN/GaN heterostructures
62. Study on the AlN/Si [formula omitted] interface properties
63. Subbands transport of the two-dimensional electron gas in Al xGa 1− xN/GaN heterostructures
64. Characterization of GaN 1− xP x alloys grown by metal-organic chemical vapor deposition
65. Effect of surface treatments on Schottky contact on n-Al xGa 1− xN/GaN heterostructures
66. Investigation of the crystal tilts in laterally epitaxial overgrowth GaN films formed by hydride vapor phase epitaxy
67. High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition
68. Growth and photocurrent property of GaN/anodic alumina/Si
69. Study of wing tilt in asymmetrically and laterally overgrowth of thick GaN films
70. GaN 1− xP x ternary alloys with high P composition grown by metal-organic chemical vapor deposition
71. Fabrication of silicon nanowires
72. Depletion of extracellular ATP affects the photosystem II photochemistry and the role of salicylic acid in this process
73. The growth of 3C-SiC on Si substrate using a SiCN buffer layer
74. Study of moiré fringes at the interface of GaN/α-Al 2O 3 (0 0 0 1)
75. Growth of high quality GaN layers with AlN buffer on Si(1 1 1) substrates
76. Observation of compensation in GaN films grown by metalorganic chemical vapor deposition
77. Simulation of electron storage in Ge/Si hetero-nanocrystal memory
78. Dynamics of tunneling into charge-tunable Si quantum dots
79. Deposition and crystallization of amorphous GaN buffer layers on Si(1 1 1) substrates
80. The formation of SiCN film on Si substrate by constant-source diffusion
81. Optical characterization of GaN films by photoreflectance and photocurrent measurement
82. Enhancement and anisotropy of the Landau g factor in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures.
83. Transport property of Si/Si1-xGex/Si p-type modulation doped double heterostructure
84. Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of [Al.sub.x][Ga.sub.1-x]N films with different Al concentrations
85. High-quality Schottky contacts to n-InGaN alloys prepared for photovoltaic devices
86. Influence of AlGaN/GaN interface polarization fields on the properties of photoconductive detectors.
87. Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures.
88. Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO 3 epitaxial thin films
89. The LiNbO3 thin films deposited on the Al0.28Ga0.72N/ GaN substrate
90. Circular photogalvanic effect at inter-band excitation in InN
91. Prognosis Impact of Postoperative Radiation in Patients with Radical Esophagectomy and Pathologic Lymph Nodes Positive Esophageal Cancer
92. The Growth of Si on SiC Complex Substrate by CVD
93. Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x
94. Enhancing upconversion emissions of NaTm0.02YbxY0.98−xF4 nanocrystals through increasing Yb3+ doping
95. Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method
96. Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO3 epitaxial thin films
97. Experimental investigation on the upconversion mechanism of 754nm NIR luminescence of Ho3+/Yb3+:Y2O3, Gd2O3 under 976nm diode laserexcitation
98. Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current
99. Ferromagnetic Fe3N films grown on GaN(0002) substrates by MOCVD
100. Rashba spin splitting for the first two subbands in heterostructures
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