Transport property of Si/Si1-xGex/Si p-type modulation doped double heterostructure

The effects of temperature and Ge fractions in high mobility Si/Si1-xGex/Si p-type modulation-doped double heterostructures with Ge fractions of 0.2, 0.25, 0.3, grown by rapid thermal process/very low pressure-chemical vapor deposition, are examined. Hole Hall mobility values of nearly 300 cm2/V s and 8400 cm2/V s are obtained at different temperatures and sheet carrier concentrations for heterostructures with x = 0.3. Hole mobility varies inversely with temperature and directly with Ge fraction.