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51. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Author

Li, Kan, Luo, Xuyi, Rony, M. W., Gorchichko, Mariia, Hiblot, Gaspard, Van Huylenbroeck, Stefaan, Jourdain, Anne, Alles, Michael L., Reed, Robert A., Zhang, En Xia, Fleetwood, Daniel M., and Schrimpf, Ronald D.

Abstract

The temperature dependence of low-frequency noise is investigated from 80 to 320 K for nMOS and pMOS bulk Si FinFETs with SiO2/HfO2 gate dielectrics. Both types of devices show excellent stability during bias-temperature stress and high total-ionizing dose (TID) irradiation. nMOSFET 1/ $f$ noise generally decreases as measuring temperature increases, with three prominent individual defect-related peaks. These peaks in noise magnitude are most likely due to hydrogen shuttling near the interface and/or O vacancies in the HfO2. In contrast, the 1/ $f$ noise in pMOSFETs generally increases with increasing temperature without prominent peaks in noise magnitude. The gate-voltage dependence of low-frequency noise also is evaluated at different temperatures for both device types. Results confirm that the nMOS devices have effective border-trap energy distributions that are nonuniform and generally increase toward midgap, and the pMOS devices have more uniform defect-energy distributions that increase monotonically toward the valence band.

Published
2023
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53. Scaling Effects on Single-Event Transients in InGaAs FinFETs

Author

Massachusetts Institute of Technology. Microsystems Technology Laboratories, Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, del Alamo, Jesus A, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, and del Alamo, Jesus A

Abstract

The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with different fin widths, but more charge is collected by wider fin devices due to the larger channel volume. Charge accumulated in the buffer and substrate layers modulates the body potential, altering the degree of back-gate control, leading to additional effects associated with charge accumulation in wider fin devices. Optical simulations for a model system suggest that optical phenomena in the fins should be considered for laser testing. These include optical interference, plasmonic enhancement at the metal-dielectric interfaces, and enhanced electron-hole pair recombination due to multiple reflections in multigate devices with nanoscale dimensions.

Published
2020

54. Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Author

Teng, Jeffrey W., primary, Nergui, Delgermaa, additional, Parameswaran, Hari, additional, Sepulveda-Ramos, Nelson E., additional, Tzintzarov, George N., additional, Mensah, Yaw, additional, Cheon, Clifford D., additional, Rao, Sunil G., additional, Ringel, Brett, additional, Gorchichko, Mariia, additional, Li, Kan, additional, Ying, Hanbin, additional, Ildefonso, Adrian, additional, Dodds, Nathaniel A., additional, Nathan Nowlin, R., additional, Zhang, En Xia, additional, Fleetwood, Daniel M., additional, and Cressler, John D., additional

Published
2021
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55. Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation.

Author

Teng, Jeffrey W., Nergui, Delgermaa, Parameswaran, Hari, Sepulveda-Ramos, Nelson E., Tzintzarov, George N., Mensah, Yaw, Cheon, Clifford D., Rao, Sunil G., Ringel, Brett, Gorchichko, Mariia, Li, Kan, Ying, Hanbin, Ildefonso, Adrian, Dodds, Nathaniel A., Nowlin, R. Nathan, Zhang, En Xia, Fleetwood, Daniel M., and Cressler, John D.

Subjects
PIN diodes, GEOSTATIONARY satellites, FAST neutrons, METEOROLOGICAL satellites, X-rays, IRRADIATION
Abstract

Integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of $2.2\,\,\boldsymbol {\times }\,\,10\,\,^{\mathrm{ 13}}$ cm−2. Changes in both dc leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose (TID) is shown to be suppressed by non-quasi-static (NQS) effects during radio frequency (RF) operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using technology computer-aided design (TCAD) simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites. [ABSTRACT FROM AUTHOR]

Published
2022
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56. Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure

Author

Wang, Peng, primary, Sternberg, Andrew L., additional, Sierawski, Brian D., additional, Zhang, En Xia, additional, Warren, Kevin M., additional, Tonigan, Andrew M., additional, Brewer, Rachel M., additional, Dodds, Nathaniel A., additional, Vizkelethy, Gyorgy, additional, Jordan, Scott L., additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2020
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58. Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs

Author

Toguchi, Shintaro, primary, Zhang, En Xia, additional, Gorchichko, Mariia, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Moreau, Stephane, additional, Cheramy, Severine, additional, Batude, Perrine, additional, Brunet, Laurent, additional, Andrieu, Francois, additional, and Alles, Michael L., additional

Published
2020
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61. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

Author

Ryder, Kaitlyn L., primary, Zhao, Yuanfu, additional, Wang, Liang, additional, Wang, Chuanmin, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, Reed, Robert A., additional, Ryder, Landen D., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Zhang, En Xia, additional, Khachatrian, Ani, additional, Buchner, Steven P., additional, Mcmorrow, Dale P., additional, and Hales, Joel M., additional

Published
2020
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62. Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack

Author

Zhao, Simeng E., primary, Bonaldo, Stefano, additional, Wang, Pengfei, additional, Zhang, En Xia, additional, Waldron, Niamh, additional, Collaert, Nadine, additional, Putcha, Vamsi, additional, Linten, Dimitri, additional, Gerardin, Simone, additional, Paccagnella, Alessandro, additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, and Fleetwood, Daniel M., additional

Published
2020
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63. Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs

Author

Ryder, Landen D., primary, Ryder, Kaitlyn L., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Gong, Huiqi, additional, Zhang, En Xia, additional, Linten, Dimitri, additional, Mitard, Jerome, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, and Reed, Robert A., additional

Published
2020
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64. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

Author

Gorchichko, Mariia, primary, Cao, Yanrong, additional, Zhang, En Xia, additional, Yan, Dawei, additional, Gong, Huiqi, additional, Zhao, Simeng E., additional, Wang, Pan, additional, Jiang, Rong, additional, Liang, Chundong, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, and Linten, Dimitri, additional

Published
2020
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65. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics

Author

Bonaldo, Stefano, primary, Putcha, Vamsi, additional, Linten, Dimitri, additional, Pantelides, Sokrates T., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Fleetwood, Daniel M., additional, Zhao, Simeng E., additional, O'Hara, Andrew, additional, Gorchichko, Mariia, additional, Zhang, En Xia, additional, Gerardin, Simone, additional, Paccagnella, Alessandro, additional, Waldron, Niamh, additional, and Collaert, Nadine, additional

Published
2020
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66. Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with sub-10-nm Fin Widths

Author

Li, Kan, primary, Zhang, En Xia, additional, Bonaldo, Stefano, additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Tonigan, Andrew M., additional, Reaz, Mahmud, additional, Ryder, Landen D., additional, Ryder, Kaitlyn L., additional, Gong, Huiqi, additional, Weiss, Sharon M., additional, Weller, Robert A., additional, Vardi, Alon, additional, del Alamo, Jesus A., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, and Schrimpf, Ronald D., additional

Published
2019
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67. Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Author

Zhao, Simeng E., primary, Bonaldo, Stefano, additional, Wang, Pan, additional, Jiang, Rong, additional, Gong, Huiqi, additional, Zhang, En Xia, additional, Waldron, Niamh, additional, Kunert, Bernardette, additional, Mitard, Jerome, additional, Collaert, Nadine, additional, Sioncke, Sonja, additional, Linten, Dimitri, additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Gerardin, Simone, additional, Paccagnella, Alessandro, additional, and Fleetwood, Daniel M., additional

Published
2019
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71. Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform

Author

Goley, Patrick S., primary, Tzintzarov, George N., additional, Zeinolabedinzadeh, Saeed, additional, Ildefonso, Adrian, additional, Motoki, Keisuke, additional, Jiang, Rong, additional, Zhang, En Xia, additional, Fleetwood, Daniel M., additional, Zimmermann, Lars, additional, Kaynak, Mehmet, additional, Lischke, Stefan, additional, Mai, Christian, additional, and Cressler, John D., additional

Published
2019
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74. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics.

Author

Gorchichko, Mariia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Cao, Yanrong, Zhang, En Xia, Yan, Dawei, Gong, Huiqi, Zhao, Simeng E., Wang, Pan, Jiang, Rong, and Liang, Chundong

Subjects
THRESHOLD voltage, RADIATION tolerance, NOISE, DIELECTRICS, RANDOM noise theory, GATES
Abstract

Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10–40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise (RTN) is observed in smaller devices due to prominent individual defects. [ABSTRACT FROM AUTHOR]

Published
2020
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75. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Author

Jiang, Rong, primary, Shen, Xiao, additional, Fang, Jingtian, additional, Wang, Pan, additional, Zhang, En Xia, additional, Chen, Jin, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Kaun, Stephen W., additional, Kyle, Erin C.H., additional, Speck, James S., additional, and Pantelides, Sokrates T., additional

Published
2018
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76. Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Author

Liao, Wenjun, primary, Zhang, En Xia, additional, Alles, Michael L., additional, Sternberg, Andrew L., additional, Arutt, Charles N., additional, Wang, Dingkang, additional, Zhao, Simeng E., additional, Wang, Pan, additional, McCurdy, Michael W., additional, Xie, Huikai, additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2018
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80. Dose-Rate Effects on the Total-Ionizing-Dose Response of Piezoresistive Micromachined Cantilevers

Author

Arutt, Charles N., primary, Liao, Wenjun, additional, Gong, Huiqi, additional, Shuvra, Pranoy Deb, additional, Lin, Ji-Tzuoh, additional, Alles, Michael L., additional, Alphenaar, Bruce W., additional, Davidson, Jim L., additional, Walsh, Kevin M., additional, McNamara, Shamus, additional, Zhang, En Xia, additional, Sternberg, Andrew L., additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2018
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83. Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies

Author

Nsengiyumva, Patrick, primary, Massengill, Lloyd W., additional, Kauppila, Jeffrey S., additional, Maharrey, Jeffrey A., additional, Harrington, Rachel C., additional, Haeffner, Timothy D., additional, Ball, Dennis R., additional, Alles, Michael L., additional, Bhuva, Bharat L., additional, Holman, W. Timothy, additional, Zhang, En Xia, additional, Rowe, Jason D., additional, and Sternberg, Andrew L., additional

Published
2018
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84. Scaling Effects on Single-Event Transients in InGaAs FinFETs

Author

Gong, Huiqi, primary, Ni, Kai, additional, Zhang, En Xia, additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Ryder, Kaitlyn L., additional, Keller, Ryan F., additional, Ryder, Landen D., additional, Weiss, Sharon M., additional, Weller, Robert A., additional, Alles, Michael L., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Vardi, Alon, additional, and del Alamo, Jesus A., additional

Published
2018
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85. Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed From Graphene Oxide

Author

Deng, Ning-qin, primary, Liao, Wen-jun, additional, Hu, Jing, additional, Wang, Peng, additional, Xu, Meng-Xuan, additional, Zhang, Hai-Nan, additional, Wang, Pan, additional, Liang, Chun-dong, additional, Tian, He, additional, Chen, Liang, additional, Ouyang, Xiao-Ping, additional, Yang, Yi, additional, Ren, Tian-ling, additional, Zhang, En Xia, additional, and Fleetwood, Daniel M., additional

Published
2018
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86. Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

Author

Faccio, Federico, primary, Borghello, Giulio, additional, Lerario, Edoardo, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Gong, Huiqi, additional, Zhang, En Xia, additional, Wang, P., additional, Michelis, Stefano, additional, Gerardin, Simone, additional, Paccagnella, Alessandro, additional, and Bonaldo, Stefano, additional

Published
2018
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87. Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators

Author

Gong, Huiqi, primary, Liao, Wenjun, additional, Zhang, En Xia, additional, Sternberg, Andrew L., additional, McCurdy, Michael W., additional, Davidson, Jim L., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Shuvra, Pranoy Deb, additional, Lin, Ji-Tzuoh, additional, McNamara, Shamus, additional, Walsh, Kevin M., additional, Alphenaar, Bruce W., additional, and Alles, Michael L., additional

Published
2018
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88. Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

Author

Bhuiyan, Maruf A., primary, Zhou, Hong, additional, Chang, Sung-Jae, additional, Lou, Xiabing, additional, Gong, Xian, additional, Jiang, Rong, additional, Gong, Huiqi, additional, Zhang, En Xia, additional, Won, Chul-Ho, additional, Lim, Jong-Won, additional, Lee, Jung-Hee, additional, Gordon, Roy G., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Ye, Peide, additional, and Ma, Tso-Ping, additional

Published
2018
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89. Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors

Author

Zhao, Simeng E., primary, Jiang, Rong, additional, Zhang, En Xia, additional, Liao, Wenjun, additional, Liang, Chundong, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Linten, Dimitri, additional, Mitard, Jerome, additional, Collaert, Nadine, additional, Sioncke, Sonja, additional, and Waldron, Niamh, additional

Published
2018
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90. Practical considerations in the design of SRAM cells on SOI

Author

Tian Hao, Yu Wenjie, Zhang En-xia, He Wei, Zhang Zheng-Xuan, and Wang Xi

Subjects
Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Sram cell, General Engineering, Electrical engineering, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, macromolecular substances, Memory cell, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Static random-access memory, business, Hardware_LOGICDESIGN
Abstract

This paper presents the practical issues encountered in designing SRAM cell design on partially depleted SOI, including the effects of floating-body potential and parasitic bipolar. It also discusses the characteristics of single-event upsets (SEU) harden and total-dose radiation harden of SOI SRAM. A fully integrated solution, using a new type memory cell SRAM described.

Published
2008

92. Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength

Author

Ni, Kai, primary, Sternberg, Andrew L., additional, Zhang, En Xia, additional, Kozub, John A., additional, Jiang, Rong, additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, McMorrow, Dale, additional, Lin, Jianqiang, additional, Vardi, Alon, additional, and del Alamo, Jesus, additional

Published
2017
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93. Strong Correlation Between Experiment and Simulation for Two-Photon Absorption Induced Carrier Generation

Author

Hales, Joel M., primary, Roche, Nicolas J-H., additional, Khachatrian, Ani, additional, Mcmorrow, Dale, additional, Buchner, Stephen, additional, Warner, Jeffrey, additional, Turowski, Marek, additional, Lilja, Klas, additional, Hooten, Nicholas C., additional, Zhang, En Xia, additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2017
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98. Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers

Author

Gong, Huiqi, primary, Liao, Wenjun, additional, Zhang, En Xia, additional, Sternberg, Andrew L., additional, McCurdy, Michael W., additional, Davidson, Jim L., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Shuvra, Pranoy Deb, additional, Lin, Ji-Tzuoh, additional, McNamara, Shamus, additional, Walsh, Kevin M., additional, Alphenaar, Bruce W., additional, and Alles, Michael L., additional

Published
2017
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