Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs

Subjects

Subjects :

Annealing -- Usage
Field-effect transistors -- Electric properties
Ionization -- Analysis
Silicon-on-isolator -- Electric properties
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189499

Volume :

56

Issue :

6

Database :

Gale General OneFile

Journal :

IEEE Transactions on Nuclear Science

Publication Type :

Academic Journal

Accession number :

edsgcl.217011974