859 results on '"Wakiya, Naoki"'
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52. Effect of SrTiO 3 seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O 3 films by metalorganic chemical vapor deposition
53. Fabrication and optical properties of Pb([Mg.sub.1/3][Nb.sub.2/3])[O.sub.3]-PbTi[O.sub.3] thin films on Si substrates using the PLD method
54. Role of SrTiO3 Seed Layer on Low-temperature Crystallization of Pb(Zr, Ti)O3 Films Prepared by Metalorganic Chemical Vapor Deposition
55. High-temperature in situ cross-sectional transmission electron microscopy investigation of crystallization process of yttrium-stabilized zirconia/Si and yttrium-stabilized zirconia/SiOx/Si thin films
56. In-Situ Magnetic Field Induced Structure and Properties of Epitaxial Spinel Ferrite Thin Films Prepared by Pulsed Laser Deposition (PLD) (Dynamic Aurora PLD Method)
57. Structure Analysis of CeO2/ZrO2/Si Multilayer Thin Films by Hrtem
58. Effect of Liquid Phase and Vaporization on the Formation of Microstructure of Pr Doped ZnO Varistor
59. Enhanced Magnetoelectric Effects in Self-Assembled Hemispherical Close-Packed CoFe2O3-Pb(Zr0.52Ti0.48)O3 Thin Film
60. Magnetoelectric Studies of Close-Packed and Hierarchically Ordered CoFe2O4/Pb(Zr0.52Ti0.48)O3/La0.6Sr0.4MnO3/LaNiO3 Multiferroic Thin Films
61. Wide range lattice parameter control by aliovalent substitution to the rare-earth site in cubic garnet Li6.75(La1−xSmx)3Zr1.75Ta0.25O12
62. Epitaxial growth of neodymia stabilized zirconia on Si(001) substrate using dynamic aurora PLD
63. Preparation of flat cross section of thin films by perforation fracture method
64. Dynamic Aurora PLD with Si and porous Si to prepare ZnFe2O4 Thin films for liquefied petroleum gas sensing
65. Fabrication of HfO2 Thin Film on Si Substrate by Double-Pulse Excitation PLD
66. Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation
67. Effect of Source Supply Methods on Low-Temperature Preparation of Lead Zirconate Titanate Thin Films Using SrTiO3 Seed Layers by Metallorganic Chemical Vapor Deposition
68. Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate
69. In Situ Simultaneous Observation of Phase Transition and Electrical Properties of Pb(Zr,Ti)O3 Thin Film by High Temperature XRD and Electrical Measurement Apparatus
70. Ferroelectricity of BiFeO3 Thin Films by Pulsed Laser Deposition and Effect of Atmosphere
71. Preparation of Epitaxial LiTaO3 Thin Films by Metal Organic Chemical Vapor Deposition and its Electrical and Optical Properties
72. Preparation and Optical Properties of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition
73. Diffusion Behavior at the Interface of (Ba,Sr)TiO3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film
74. Investigation of Domain Structure and Electrical Properties of Monoclinic Epitaxial Zirconia Buffer Layer
75. Investigation of the solidus boundaries and microstructure in the ZnO–PrO1.5–CoO system
76. Proposal of general rule to prepare epitaxial ceramic thin films at low temperature from the point of crystal chemistry
77. Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method
78. Preparation of heteroepitaxial SrRuO3 thin film on Si substrate and microstructure of BaTiO3-NiFe2O4 epitaxial composite thin film deposited on the SrRuO3 bottom electrode using PLD
79. Optimization of synthesis conditions to prepare desired shell thickness of superparamagnetic MgFe2O4@SiO2 core-shell nanosphere for biomedical applications
80. HRTEM investigation of the 90° domain structure and ferroelectric properties of multi-layered PZT thin films
81. Growth of highly (001)-textured strontium barium niobate thin films on epitaxial LaNiO 3/CeO 2/YSZ/Si(100)
82. Preparation of InN by Means of AP-HCVD Using In Buffer Layers
83. Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure
84. Interface structure of Pb(Zr,Ti)O3/MgO(001) epitaxial thin film in early stage of Stranski–Krastanov growth mode
85. Interface structure of Pb(Zr,Ti)O3/MgO(001) epitaxial thin film in early stage of Stranski–Krastanov growth mode
86. Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method
87. Effect of deposition conditions and buffer layers on amorphous or polytype phase formation in Al2O3 thin films by chemical vapor deposition using tri-methyl aluminum
88. Свойства синтезированных методом пиролиза ультразвуковой аэрозоли наночастиц MgFe-=SUB=-2-=/SUB=-O-=SUB=-4-=/SUB=- для биомедицинских применений
89. Cross Sectional Processing of Ferroelectric Thin Films by Ion-milling for AFM Analysis
90. Structural, dielectric, and ferroelectric properties of PbTiO 3 thin films by a simple sol–gel technique
91. RF-magnetron-sputtered heteroepitaxial YSZ and CeO 2/YSZ/Si(0 0 1) thin films with improved capacitance–voltage characteristics
92. Low-temperature epitaxial growth of conductive LaNiO 3 thin films by RF magnetron sputtering
93. Stabilization of perovskite Pb(Mg 1/3Nb 2/3)O 3 thin film by a thin BaTiO 3 buffer layer on Pt/Ti/SiO 2/Si
94. Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/RuO2 Thin Films by MOCVD
95. Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO2/Si thin film by Nb-doping
96. Hrteminvestigation of 90° Domain Configureuration and P-E Hysteresis Loop of Epitaxial PZT Multilayered Thin Films
97. Hrtem Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-K Gate Dielectrics
98. Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers
99. Role of the First Atomic Layers in Epitaxial Relationship and Interface Characteristics of SrTiO3 Films on CeO2/YSZ/Si(001)
100. Epitaxial Growth and Magnetic Behavior of (Ni,Zn)Fe2O4 Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application
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