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287 results on '"Tsatsulnikov, A. F."'

65. Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells.

Author

Bolshakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F., and Yagovkina, M. A.

Subjects
QUANTUM wells, TWO-dimensional materials (Nanotechnology), EXCITON theory, POLARITONS, LIGHT absorption, X-ray diffraction, BRAGG'S law (Physics), BRAGG'S X-ray spectrometer
Abstract

We studied the optical properties of periodic InGaN/GaN multiple quantum well systems with different numbers of periods. A resonant increase in the optical reflection and simultaneous suppression of the optical absorption have been revealed experimentally at room temperature when the Bragg and exciton resonances were tuned to each other. Numerical modeling with a single set of parameters gave a quantitatively accurate fit of the experimental reflection and transmission spectra in a wide wavelength range and various angles of the light incidence. The model included both exciton resonance and non-resonant band-to-band transitions in the InGaN quantum wells, as well as Rayleigh light scattering in the GaN buffer layer. The analysis also involved x-ray diffraction and photoluminescence data. It allowed us to determine the key parameters of the structure. In particular, the radiative broadening of the InGaN QW excitons was evaluated as 0.20 ± 0.02 meV. [ABSTRACT FROM AUTHOR]

Published
2017
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68. Proton irradiation effects on GaN-based epitaxial structures

Author

Lebedev, A A, primary, Davydov, V Yu, additional, Smirnov, A N, additional, Eliseyev, I A, additional, Davydovskaya, K S, additional, Zavarin, E E, additional, Zakheim, D A, additional, Lundin, W V, additional, Nikolaev, A E, additional, Sakharov, A V, additional, Tsatsulnikov, A F, additional, Zubov, A V, additional, and Kozlovski, V V, additional

Published
2020
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74. Developing of normally-off p-GaN gate HEMT

Author

Kukhtyaeva, O B, primary, Egorkin, V I, additional, Zemlyakov, V E, additional, Kapaev, V V, additional, Zaitsev, A A, additional, Tsatsulnikov, A F, additional, Nikolaev, A E, additional, and Sakharov, A V, additional

Published
2019
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76. Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film.

Author

Rozhavskaya, M. M., Lundin, W. V., Lundina, E. Yu., Davydov, V. Yu., Troshkov, S. I., Vasilyev, A. A., Brunkov, P. N., Baklanov, A. V., Tsatsulnikov, A. F., and Dubrovskii, V. G.

Subjects
NANOWIRES, METAL organic chemical vapor deposition, CHEMICAL beam epitaxy, CHEMICAL vapor deposition, TITANIUM, NANOSTRUCTURED materials
Abstract

We present a new approach for synthesis of GaN nanowires and microwires by metal organic chemical vapor deposition via a thin titanium film evaporated onto sapphire substrate prior to growth. Titanium etches a two-dimensional GaN layer deposited at the initial stage and GaN nanowires subsequently emerge at the boundaries of the etched grains. These wires grow at an exceptional elongation rate of 18 μm/min and extend radially at a rate of 0.14 μm/min. The GaN layer between the wires grows at a rate of 0.1 μm/min. High material quality of these structures is confirmed by micro-photoluminescence spectroscopy. We investigate the initial nucleation stage, the time evolution of the wire length and diameter, the length and diameter distributions and speculate about a mechanism that yields the observed growth behavior. [ABSTRACT FROM AUTHOR]

Published
2015
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80. Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

Author

Yadav, Amit, Titkov, Ilya E., Sakharov, Alexei V., Lundin, Wsevolod V., Nikolaev, Andrey E., Sokolovskii, Grigorii S., Tsatsulnikov, Andrey F., Rafailov, Edik U., Yadav, Amit, Titkov, Ilya E., Sakharov, Alexei V., Lundin, Wsevolod V., Nikolaev, Andrey E., Sokolovskii, Grigorii S., Tsatsulnikov, Andrey F., and Rafailov, Edik U.

Abstract

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

Published
2018

81. Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode

Author

Titkov, Ilya E., Yadav, Amit, Karpov, Sergey Yu., Sakharov, Alexei V., Tsatsulnikov, Andrey F., Slight, Thomas J., Gorodetsky, Andrei, and Rafailov, Edik U.

Abstract

The future generation of modern illumination should not only be cheap and highly efficient, but also demonstrate high quality of light, light which allows better color differentiation and fidelity. Here we are presenting a novel approach to create a white solid-state light source providing ultimate color rendition necessary for a number of applications. The proposed semi-hybrid device combines a monolithic blue-cyan light emitting diode (MBC LED) with a green-red phosphor mixture. It has shown a superior color rendering index (CRI), 98.6, at correlated color temperature of around 3400 K. The MBC LED epi-structure did not suffer from the efficiency reduction typical for monolithic multi-color emitters and was implemented in the two most popular chip designs: “epi-up” and “flip-chip”. Redistribution of the blue and cyan band amplitudes in the white-light emission spectrum, using the operating current, is found to be an effective tool for fine tuning the color characteristics. (Figure presented.).

Published
2016

85. Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Author

Karpov, S.Y., Cherkashin, Nikolay, Lundin, Wsevolod V., Nikolaev, Andrey E., Sakharov, Alexei V., Sinitsin, M.A., Usov, S.O., Zavarin, E.E., Tsatsulnikov, Andrei F., Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics]
Abstract

cited By 6; International audience; InGaN-based monolithic multi-color light emitting diodes (LEDs) are studied both experimentally and theoretically with the focus on factors controlling their emission spectra and efficiency. A number of LEDs with different designs of spacers separating active regions providing blue and green light emission is examined. Unexpected behavior of the multi-color LED efficiency is explained in terms of a simple balance model, assuming some degradation of materials quality of the green active region grown on top of the blue one. Electrical properties of spacers separating different active regions in the multi-color LED structures are identified as the major factor controlling the contributions of these active regions to the total emission spectrum. Correlations between the type and level of the spacer doping and the emission spectrum are found by simulations. Alternative ways of the spectral control by using polarization doping in the graded-composition InGaN and AlGaN alloys used as the spacers are suggested. Color characteristics of blue/green dual-wavelength LEDs are also measured and discussed, regarding their possible applications.

Published
2016

86. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Author

Barettin, Daniele, primary, Auf der Maur, Matthias, additional, di Carlo, Aldo, additional, Pecchia, Alessandro, additional, Tsatsulnikov, Andrei F, additional, Lundin, Wsevolod V, additional, Sakharov, Alexei V, additional, Nikolaev, Andrei E, additional, Korytov, Maxim, additional, Cherkashin, Nikolay, additional, Hÿtch, Martin J, additional, and Karpov, Sergey Yu, additional

Published
2017
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88. Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

Author

Barettin, Daniele, primary, Maur, Matthias Auf der, additional, Carlo, Aldo di, additional, Pecchia, Alessandro, additional, Tsatsulnikov, Andrei F, additional, Sakharov, Alexei V, additional, Lundin, Wsevolod V, additional, Nikolaev, Andrei E, additional, Usov, Sergey O, additional, Cherkashin, Nikolay, additional, Hÿtch, Martin J, additional, and Karpov, Sergey Yu, additional

Published
2016
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91. Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Author

Tsatsulnikov, Andrei F., Lundin, Wsevolod V., Sakharov, Alexei V., Nikolaev, Andrey E., Zavarin, E.E., Usov, S.O., Yagovkina, Maria A., Hÿtch, Martin, Korytov, Maxim, Cherkashin, Nikolay, Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] ( RAS ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Matériaux et dispositifs pour l'Electronique et le Magnétisme ( CEMES-MEM ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3)

Subjects
010302 applied physics, Luminescence, Light Emitting Diodes, Metalorganic Vapor Phase Epitaxy, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Growth Interruption, [SPI.TRON]Engineering Sciences [physics]/Electronics, [ SPI.TRON ] Engineering Sciences [physics]/Electronics, Quantum Wells, 0103 physical sciences, Indium Gallium Nitride, Quantum Dots, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, 0210 nano-technology
Abstract

cited By 4; International audience; Here, we develop a technological approach to the formation of three-dimensional island-like structures in the active medium of InGaN/GaN based light emitting diodes with an enhanced efficiency with respect to reference quantum wells emitting at the same wavelengths. The reference structures contain two-dimensional In x Ga1– x N quantum wells with x ≤ 18% immediately overgrown after their formation. The method consists in the application of a growth interruption in N2 or N2–H2 mixed atmospheres at different H2 flows and times after the deposition of In0.18Ga0.82N quantum wells, prior to their overgrowth by a GaN layer. The growth interruptions allow a controlled blue shift of the emission peak position with respect to that of the In0.18Ga0.82N structure. The integrated photoluminescence intensity of the so-formed structures is about 1.5 times higher than that of the reference structures emitting at the same peak wavelengths. Light emitting diode structures subjected to growth interruption exhibit higher external quantum efficiency than the reference structures emitting at the same wavelengths. We demonstrate that the observed phenomenon is related to a better charge carrier confinement within a quantum well due to the transformation of planar InGaN layers into laterally connected flat islands.

Published
2015

92. Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Author

Jeon, Heonsu, Tu, Li-Wei, Krames, Michael R., Strassburg, Martin, Zulonas, Modestas, Titkov, Ilya E., Yadav, Amit, Fedorova, Ksenia a., Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Meredith, Wyn, Rafailov, Edik U., Slight, Thomas J., Jeon, Heonsu, Tu, Li-Wei, Krames, Michael R., Strassburg, Martin, Zulonas, Modestas, Titkov, Ilya E., Yadav, Amit, Fedorova, Ksenia a., Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Meredith, Wyn, Rafailov, Edik U., and Slight, Thomas J.

Abstract

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Published
2016

93. Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Author

Titkov, Ilya E., Yadav, Amit, Zerova, Vera L., Zulonas, Modestas, Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Rafailov, Edik U., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, and Fujioka, Hiroshi

Abstract

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Published
2014

98. Realistic model of LED structure with InGaN quantum-dots active region

Author

Barettin, Daniele, primary, Auf der Maur, Matthias, additional, Pecchia, Alessandro, additional, Rodrigues, Walter, additional, Tsatsulnikov, Andrei F., additional, Sakharov, Alexei V., additional, Lundin, Wsevolod V., additional, Nikolaev, A. E., additional, Cherkashin, Nikolay, additional, Hytch, Martin J., additional, Karpov, Sergey Yu., additional, and di Carlo, Aldo, additional

Published
2015
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100. Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Author

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Titkov, Ilya E., Yadav, Amit, Zerova, Vera L., Zulonas, Modestas, Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., Rafailov, Edik U., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Titkov, Ilya E., Yadav, Amit, Zerova, Vera L., Zulonas, Modestas, Tsatsulnikov, Andrey F., Lundin, Wsevolod V., Sakharov, Alexey V., and Rafailov, Edik U.

Abstract

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Published
2014

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