371 results on '"Saigne, F."'
Search Results
52. Effect of Temperature on Single Event Latchup Sensitivity
53. Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability
54. Modeling low-dose-rate effects in irradiated bipolar-base oxides
55. Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices
56. Experimental determination of the frequency factor of thermal annealing processes in metal-oxide-semiconductor gate-oxide structures
57. Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements
58. Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices
59. Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors
60. Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing
61. Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity
62. Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.
63. High field stress at and above room temperature in 2.3 nm thick oxides
64. Total Ionizing Dose effects in DDR3 SDRAMs under Co-60 and X-ray irradiation
65. Radiation Effects on Deep Submicrometer SRAM-Based FPGAs Under the CERN Mixed-Field Radiation Environment
66. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
67. Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations
68. Dose and dose rate effects on NPN bipolar junction transistors irradiated at high temperature
69. Determination of the deposited energy in a silicon volume by n-Si nuclear interaction
70. TCAD prediction of dose effects on MOSFETs with ECORCE
71. The Power Law Shape of Heavy Ions Experimental Cross Section
72. Soft errors in commercial off-the-shelf static random access memories
73. An Integrated Sensor Using Optically Stimulated Luminescence for In-Flight Dosimetry
74. Experimental Procedure to Predict the Competition Between the Degradation Induced by Irradiation and Thermal Annealing of Oxide Trapped Charge in MOSFETs
75. Prediction of the One-Year Thermal Annealing of Irradiated Commercial Devices Based on Experimental Isochronal Curves
76. High Energy Electron Dose-Mapping Using Optically Stimulated Luminescent Films
77. Use of the Radiation-Induced Charge Neutralization Mechanism to Achieve Annealing of 0.35 [micro]m SRAMs
78. Use and benefits of COTS board level testing for radiation hardness assurance
79. TCAD simulations of leakage currents induced by SDRAM single-event cell degradation
80. Dose Rate Switching Technique on_newline ELDRS-Free Bipolar Devices
81. SEE on Different Layers of Stacked-SRAMs
82. Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs
83. Dose Rate Switching Technique to Estimate the Low Dose Rate Response of Bipolar Technologies
84. Proton-Induced SDRAM Cell Degradation
85. Dose Effects on CMOS Active Pixel Sensors
86. A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing
87. Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
88. Dynamic Test Methods for COTS SRAMs
89. 90 nm SRAM Static and Dynamic Mode Real-Time Testing at Concordia Station in Antarctica
90. On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination
91. The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier
92. Study of a Thermal Annealing Approach for Very High Total Dose Environments
93. Impact of Neutron-Induced Displacement Damage on the ATREE Response in LM124 Operational Amplifier
94. Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation
95. Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa
96. An SRAM Based Monitor for Mixed-Field Radiation Environments
97. Impact of Single Event Gate Rupture and Latent Defects on Power MOSFETs Switching Operation
98. Multiple Cell Upset Classification in Commercial SRAMs
99. Determining Realistic Parameters for theDouble Exponential Law that Models Transient Current Pulses
100. Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.