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1,306 results on '"Ryssel, H."'

65. Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide

Author

Treu, M., Burte, E.P., Schorner, R., Friedrichs, P., Stephani, D., and Ryssel, H..

Subjects
Metal oxide semiconductors -- Evaluation, Semiconductor films -- Evaluation, Capacitors -- Materials, Physics
Abstract

The quality of thermal oxides on n-type 4H-SiC epitaxial layers doped heavily with nitrogen has been studied. The layers were deposited through ion-implantation and annealed at various temperatures. The oxides suffer from intrinsic breakdown at electric fields of about 8 and 10 MV/cm. There was a reduction in the SiC-SiO2 barrier height for capacitors with higher doses of nitrogen doping. It has also been proven that it is better to anneal at 1700 degrees C than at 1450 degrees C.

Published
1998

66. Atomistic modeling of high-concentration effects of impurity diffusion in silicon

Author

List, S. and Ryssel, H.

Subjects
Semiconductors -- Impurity distribution, Silicon crystals -- Research, Physics
Abstract

Research was conducted to examine the atomistic modeling of high-concentration effects of impurity diffusion in silicon on a microscopic model level. The microscopic forces between dopant atoms and vacancies are taken into consideration in performing the simulation. Simulation results for the different microscopic approaches are utilized to give an evaluation of the validity of models for high-concentration diffusion based on percolation theory.

Published
1998

67. Atomistic analysis of the vacancy mechanism of impurity diffusion in silicon

Author

List, S. and Ryssel, H.

Subjects
Semiconductors -- Impurity distribution, Physics
Abstract

Research was conducted to investigate the atomistic analysis of the vacancy mechanism of impurity diffusion in silicon. Measurement was performed from the atomistic mechanism through accurately taking into consideration the effects of the microscopic forces between vacancies and dopants. Results indicate that the reduction of the activation energy of dopant diffusivity can be explained by a nonbinding interaction that enlarges the vacancy mobility in the neighborhood of the dopant.

Published
1998

79. Calculation of the transport matrix for the coupled diffusion of dopants and vacancies

Author

List, S., Pichler, P., and Ryssel, H.

Subjects
Semiconductor doping -- Research, Electron transport -- Analysis, Physics
Abstract

A study of the transport matrix associated with dopants and vacancies for coupled diffusion revealed the vacancy gradient to cause variations in the dopant and vacancy direction depending on potential range. Atomic jump frequencies were used to compute dopant and vacancy transport coefficients when dopant and vacancy gradients existed. This model encompassed the interaction potential between the point defect and the dopant.

Published
1994

80. Simulation of the step coverage for chemical vapor deposited silicon dioxide

Author

Wille, H., Burte, E., and Ryssel, H.

Subjects
Chemical vapor deposition -- Research, Thin films -- Research, Physics
Abstract

A simulation model was used to investigate step coverage for chemical vapor deposited silicon dioxide on structured wafer surfaces. The results showed that adsorption and desorption of the deposition precursor effectively indicated the mechanics of deposition and step coverage of low-pressure chemical vapor deposition films.

Published
1992

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