Simulation of the step coverage for chemical vapor deposited silicon dioxide

Authors :: Wille, H.
Burte, E.
Ryssel, H.
Source :: Journal of Applied Physics. April 1, 1992, Vol. 71 Issue 7, p3532, 6 p.
Publication Year :: 1992
Abstract: A simulation model was used to investigate step coverage for chemical vapor deposited silicon dioxide on structured wafer surfaces. The results showed that adsorption and desorption of the deposition precursor effectively indicated the mechanics of deposition and step coverage of low-pressure chemical vapor deposition films.