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Doping semiconductor nanomaterials with manganese ion (Mn2+) introduce a well‐defined photoactive d‐d level within the band structure, paving the way for diverse applications. Although Mn doping in single‐layer 2D hybrid perovskites (n = 1) has been extensively studied, limited research has been conducted on doping with modulation of the layer thickness. Herein, Mn2+ doping in hybrid 2D perovskite nanoplatelets (NPLs), L2An‐1[Pb1‐xMnx]nBr3n+1 (where L = butylammonium, A = methylammonium), with variations in Mn concentration (x = 0–0.60) and layer thickness (n = 1–3) is reported. Substitutional doping of Mn significantly increases the photoluminescence quantum yield as well as the rate of energy transfer efficiency, which strongly depends on the layer thickness of NPLs. The Mn concentration in 2D NPLs determines the rate of forward and backward energy transfer. Low‐temperature emission spectra allow to determine thickness‐dependent exciton binding energy for Mn‐doped 2D NPLs (x = 0.5) with values of 410 ± 11 meV (n = 1), 188 ± 9 meV (n = 2), and 151 ± 17 meV (n = 3). The faster dissociation of band‐edge excitons into free carriers at Mn2+ sites results in high brightness with an excellent CRI of 89.2 for the white light‐emitting diode. [ABSTRACT FROM AUTHOR]

The inner barrier in stepped quantum wells, which embrace an intrinsic structural inversion asymmetry (SIA), offers more possibilities for the multi-band spin–orbit (SO) control. By varying the inner band offset δ , which adjusts the quantum confinement for electrons and also the SIA, we reveal that both the Rashba ( α ν ) and Dresselhaus ( β ν ) SO coeffcients of the two subbands exhibit contrasting dependence on δ. Also, α 1 and α 2 may have opposite signs, depending on the value of δ. By fine tuning the inner offset, there may even exist a scenario in which α 2 identically vanishes but α 1 is finite, offering a knob on how to subband-selectively suppress spin relaxation induced by SO coupling. In addition, by resorting to an external gate V g , we reveal that in the regime of α 1 and α 2 having opposite signs, their magnitudes also vary with V g in an opposite manner. This, together with the engineered inner barrier of stepped wells, will facilitate flexible spin manipulation. Finally, the interband SO couplings, which depend on the spatial overlap of wave functions of distinct subbands and the corresponding parities, are also discussed. [ABSTRACT FROM AUTHOR]

This paper explores the optical limiting (OL) characteristics of an input probe field within a closed-loop asymmetric coupled quantum well (ACQW) system. Our research reveals that the application of Terahertz (THz) coupling laser fields can induce the OL behavior within the THz domain in the ACQW. The study demonstrates that revers saturable absorption arises through cross-Kerr nonlinearity, contributing to the emergence of OL behavior. Additionally, it is shown that the self-defocusing is induced concurrently within the system, further enhancing nonlinear refractive OL effects. Furthermore, it is revealed that the properties of induced OL can be manipulated by adjusting the characteristics of the applied fields. The discovered outcomes hold potential utility in safeguarding sensors and detectors operating within the THz band. [ABSTRACT FROM AUTHOR]

The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent electroluminescence measurements on dual wavelength AlGaN multiple quantum well (MQW) LEDs show a strong shift in the spectral power distribution from 250 to 233 nm with decreasing temperature. Comparing experimental data with simulation shows that the hole mobility and the electron to hole mobility ratios have a significant influence on the carrier injection efficiency (CIE) and that the change in the spectral power distribution is originating from a change in the hole distribution in the MQWs. Poor hole injection and charge carrier confinement in the AlGaN MQW active region was identified as one of the main reasons for the low CIE in far-UVC LEDs. [ABSTRACT FROM AUTHOR]

Hexavalent chromium (Cr (VI)) is a heavy metal that is distributed globally and poses a significant threat to the environment through various mechanisms. It can react with soil and water, leading to severe environmental damage. In this study, the toxicity of Cr (VI) was investigated by analyzing two major cyanobacteria species, Nostoc commune and Anabaena variabilis, commonly found in soil along with their consortia. The findings revealed that the toxicity mechanisms of Cr (VI) differed in individual monocultures, with Cr (VI) competing with various components. However, when the cyanobacteria species were combined, i.e., in consortia, they demonstrated an impressive retention of their functioning even in Cr (VI) concentration at 10 ppm. The study also concluded that non-photochemical quenching played a critical role in minimizing Cr (VI) toxicity. Furthermore, the research examined the role of the S-cycle in the process. The quantum yield of electron flux revealed that the Cr (VI) was competing with Qa in A. variabilis and with Qb in N. commune, albeit the photosystem dysfunction is only visible in the latter. The mechanism seemed to be quantum tunneling alteration because of the Cr (VI) having different energized quantum wells. The consortia proved to be behaving in a better manner as compared to the control. Overall, this study reveals the mode of toxicity of Cr (VI) in these two important cyanobacterial strains as well as it also discusses the mechanism of tolerance of consortia against Cr (VI) toxicity. [ABSTRACT FROM AUTHOR]

Gaussian potentials serve as a valuable tool for the comprehensive modeling of short‐range interactions, spanning applications from Nuclear Physics to the artificial confinement of electrons within quantum dots. This study focuses on examining the lowest states within Gaussian wells, with particular emphasis on the weakly bound regime. The analysis delves into the asymptotic behavior of the exact wave function at both small and large distances, motivating the development of a few parametric Ansatz which is locally accurate and yields to a fast convergent basis set. To validate its efficacy, we assess its convergence rate using a toy model of Nuclear Physics, specifically for Deuteron. Furthermore, we employ the expansion of the energy close to the threshold to derive an analytical formula for the binding energy of the Deuteron whose accuracy improves as the effective parameter approaches the critical. To conclude our study, we test the ability of our Ansatz to describe relativistic corrections into a quantum dot and its performance as an orbital in the exploration of the electronic structure of a two‐electron quantum dot. [ABSTRACT FROM AUTHOR]

IR light-emitting diodes (LEDs) based on InGaAs/AlGaAs multiple quantum wells (MQWs) and AlxGa AsyP layers, compensating stress in the active area, have been developed. The optical losses caused by absorption of the radiation generated by the active area (λ = 940 nm) have been investigated at different doping levels of n-GaAs substrates. It is shown that reduction of the donor doping level from 4 × 1018 to 5 × 1017 cm–3 gives an increase in the LED quantum efficiency of ~30%. A technology making it possible type to eliminate completely the optical losses caused by absorption during radiation output has been developed. Removal of the substrate and transfer of the device structure to a carrier substrate with formation of a rear metal reflector made it possible to create LEDs demonstrating a twofold increase in the external quantum efficiency (EQE) and efficiency (~40%) as compared to the technology of radiation output through an n-GaAs substrate. [ABSTRACT FROM AUTHOR]

The Rashba effect of polaron in RbCl triangular quantum wells under the influence of a magnetic field is theoretically studied, and the expression of the ground state energy of the polaron is obtained within the Pekar variational method. The ground state energy of the polaron splits into two branches due to the Rashba effect. This phenomenon fully demonstrates that the influence of orbit and spin interaction in different directions on the energy of the polaron is not negligible. Because the contribution of the magnetic field cyclotron resonance frequency to the Rashba spin-orbit splitting is a positive value, the energy spacing becomes larger as the magnetic field cyclotron resonance frequency increases. Due to the spin-orbit coupling interaction, the energy splits at zero field. The total energy is reduced due to the presence of phonon. Therefore, the polaron state is more stable than the bare electron state, and the polaron energy splitting is more stable. [ABSTRACT FROM AUTHOR]

Bound states of the $ \hbox {He}_2 $ He 2 molecule are determined from an electron-He $ {}_2^+ $ 2 + collision calculation using the R-matrix method. The calculations are performed at a moderately dense grid of 35 internuclear separations are used to characterise $ \hbox {He}_{2} $ He 2 Rydberg states with $ n \leq ~7 $ n ≤ 7. Potential energy curves for singlet $ {}^{1} \Sigma _{g}^{+} $ 1 Σ g + , $ {}^{1} \Sigma _{u}^{+} $ 1 Σ u + , $ {}^{1} \Pi _{g} $ 1 Π g , $ {}^{1} \Pi _{u} $ 1 Π u and $ {}^{1} \Delta _{u} $ 1 Δ u and triplet $ {}^{3} \Sigma _{g}^{+} $ 3 Σ g + , $ {}^{3} \Sigma _{u}^{+} $ 3 Σ u + , $ {}^{3} \Pi _{g} $ 3 Π g , $ {}^{3} \Pi _{u} $ 3 Π u and $ {}^{3} \Delta _{u} $ 3 Δ u Rydberg states of $ \hbox {He}_{2} $ He 2 as well as effective quantum numbers as a function of internuclear separation are calculated. Based on the potential energy curves of A $ {}^{1} \Sigma _{g}^{+} $ 1 Σ g + , B $ {}^{1} \Pi _{g} $ 1 Π g , C $ {}^{1} \Sigma _{u}^{+} $ 1 Σ u + , F $ {}^{1} \Pi _{u} $ 1 Π u and a $ {}^{3} \Sigma _{u}^{+} $ 3 Σ u + , b $ {}^{3} \Pi _{g} $ 3 Π g , c $ {}^{3} \Sigma _{g}^{+} $ 3 Σ g + , f $ {}^{3} \Pi _{u} $ 3 Π u , spectroscopic parameters ( $ T_{e} $ T e , $ D_e, R_e, \omega _e, \omega _e x_e, \alpha _e $ D e , R e , ω e , ω e x e , α e and $ B_e) $ B e) of these states have been determined and compared with theoretical and experimental data available. [ABSTRACT FROM AUTHOR]

The polarized photoluminescence emitted on the edge of a series of aluminum‐rich (Al,Ga)N‐AlN quantum wells (QWs) grown by molecular beam epitaxy on AlN templates deposited by metal organic chemical vapor deposition on c‐plane sapphire is measured. The contrast and the principal axis of the emission diagrams for 2 nm‐thick (Al,Ga)N QWs grown for aluminum compositions between 40% and 90% are studied. The light is emitted on the edge of the QWs at wavelengths going from 280 nm down to 209 nm. The emission diagram, a change from oblate to prolate with respect to the in‐plane orientation, for an aluminum composition is found to occur around 72%, that is, at an emission wavelength of about 235 nm. The orientations and shapes of the edge‐emission diagrams indicate that the fluctuations of the composition of the (Al,Ga)N confining layer are deep enough for producing intravalence band mixings. This property, that acts in concert with the built‐in strain and quantum‐confined Stark effect, contributes to the anisotropy of the light emission when the aluminum composition reaches 60–70%, that is, for an emission wavelength of 260–235 nm. [ABSTRACT FROM AUTHOR]

Over the past decade, the research on modelocked 2 μm$\umu {\rm m}$ fiber lasers has increased rapidly. Conventionally, modelocking is achieved with the existing quantum well structures as well as 2D materials classified as Real Saturable Absorbers. As time progressed and keeping in mind the versatility, stability and robustness, demonstration of 2 μm$\umu {\rm m}$ fiber lasers that are modelocked by Artificial Saturable Absorbers (ASA) gained importance. This class of Saturable Absorbers exhibits interesting properties, which can make them the best candidate to replace real material‐based Saturable Absorbers. The progress of ASA based modelocking schemes in the 2 μm$\umu {\rm m}$ regime is explored and discussed in detail, along with its underlying physics, citing the various uses and the increasing market for ultrafast fiber lasers. Toward the end of this review, a comparison is drawn between different ASAs based modelocking schemes to get the most favorable conditions for desired output parameters as per one's needs. These fiber lasers with an all‐fiber ASA foundation have potential uses in the fields of medical, LIDAR, mid‐IR generation, environmental sensing, industrial, and defence. [ABSTRACT FROM AUTHOR]

In this study, possible origins of small V-pits observed in multiple quantum wells (MQWs) overgrown on as-grown and porosified InGaN superlattice (SL) pseudo-substrates have been investigated. Various cross-sectional transmission microscopy techniques revealed that some of the small V-pits arise from the intersection of threading defects with the sample surface, either as part of dislocation loops or trench defects. Some small V-pits without threading defects are also observed. Energy dispersive x-ray study indicates that the Indium content in the MQWs increases with the averaged porosity of the underlying template, which may either be attributed to a reduced compositional pulling effect or the low thermal conductivity of the porous layer. Furthermore, the porous structure inhibits the glide or extension of the misfit dislocations (MD) within the InGaN SL. The extra strain induced by the higher Indium content and the hindered movement of the MDs combined may explain the observed additional small V-pits present on the MQWs overgrown on the more relaxed templates. [ABSTRACT FROM AUTHOR]

In the pursuit of creating non-absorption window (NAW) structures in high-power semiconductor laser cavities, techniques like impurity-free vacancy diffusion and rapid thermal annealing induced quantum well intermixing were employed. The challenge is to induce a desired 30 nm blue shift while safeguarding the gain-emitting region from high-temperature annealing O2− bombardment effectively inhibits quantum well mixing, as demonstrated through experiments. Epitaxial wafers subjected to this treatment exhibit just a 1 nm blue shift, compared to 32 nm without O2− bombardment. These findings provide essential insights for protecting the gain-emitting region during NAW structure fabrication. [ABSTRACT FROM AUTHOR]

The aluminum gallium nitride (AlGaN)-based deep-ultraviolet light-emitting diode (DUV-LED) has been a prominent device due to its contribution in various fields. The electron blocking layer (EBL) is an additional layer in the epitaxy of the DUV-LED with the aim of reducing the overflow of electrons and improving the hole injection, consequently increasing the performance of the DUV-LED. However, the threshold of the EBL thickness and its influence on the electrical and optical properties is still not fully understood. Hence, the purpose of this research is to investigate the effects of varying the EBL thickness, ranging from 5 nm up to 60 nm, and investigate the threshold of EBL thickness for the AlGaN-based DUV-LED. The analysis includes the internal quantum efficiency (IQE), luminescence spectrum, band diagram behavior, and the current density of the carrier. It is found that EBL thickness of 15 nm produces the highest IQE (39.69%) for the DUV-LED with a single quantum well structure, where the wavelength emitted is ~ 257 nm, which is within the ultraviolet C (UVC) range. [ABSTRACT FROM AUTHOR]

Quantum computing has emerged as a transformative paradigm, with revolutionary potential in numerous fields, including quantum image processing and compression. Applications that depend on large scale image data could benefit greatly from parallelism and quantum entanglement, which would allow images to be encoded and decoded with unprecedented efficiency and data reduction capability. This paper provides a comprehensive overview of the rapidly evolving field of quantum image compression, including its foundational principles, methods, challenges, and potential uses. The paper will also feature a thorough exploration of the fundamental concepts of quantum qubits as image pixels, quantum gates as image transformation tools, quantum image representation, as well as basic quantum compression operations. Our survey shows that work is still sparse on the practical implementation of quantum image compression algorithms on physical quantum computers. Thus, further research is needed in order to attain the full advantage and potential of quantum image compression algorithms on large-scale fault-tolerant quantum computers. [ABSTRACT FROM AUTHOR]

Site- and polarity-controlled core–shell InGaN/GaN nanorod LED structures were grown by metal organic vapor phase epitaxy on Si(111). Scanning transmission electron microscope images reveal uniform multiple quantum wells on polarization-free sidewalls. Spatially resolved photoluminescence mapping on a single nanorod demonstrates that the emission at 3.0 eV stems from the polarization-free m-plane, which is supported by a fast recombination lifetime of ∼490 ps at low temperatures. Quasi-resonant laser excitation demonstrates predominant radiative recombination at low excitation densities, whereas at high excitation densities, the efficiency is lowered by Auger recombination and/or carrier leakage. [ABSTRACT FROM AUTHOR]

The misfit dislocation formation related to plastic strain relaxation in Si or Ge quantum well layers in SiGe heterostructures for spin qubits tends to negatively affect the qubit behaviors. Therefore, it is essential to understand and then suppress the misfit dislocation formation in the quantum well layers in order to achieve high-performance qubits. In this work, we studied the misfit dislocation propagation kinetics and interactions by annealing the strained Si or Ge layers grown by molecular beam epitaxy. The annealing temperatures are from 500 to 600 °C for Si layers and from 300 to 400 °C for Ge layers. The misfit dislocations were investigated by electron channeling contrast imaging. Our results show that the misfit dislocation propagation is a thermally activated process. Alongside, the blocking and unblocking interactions during misfit dislocations were also observed. The blocking interactions will reduce the strain relaxation according to theoretical calculation. These observations imply that it is possible to suppress the misfit dislocation formation kinetically by reducing the temperatures during the SiGe heterostructure epitaxy and post-epitaxy processes for developing well-functional SiGe-based spin qubits. [ABSTRACT FROM AUTHOR]

Hybrid ferromagnet–semiconductor systems possess new outstanding properties, which emerge when bringing magnetic and semiconductor materials into contact. In such structures, the long-range magnetic proximity effect couples the spin systems of the ferromagnet and semiconductor on distances exceeding the carrier wave function overlap. The effect is due to the effective p–d exchange interaction of acceptor-bound holes in the quantum well with d-electrons of the ferromagnet. This indirect interaction is established via the phononic Stark effect mediated by the chiral phonons. Here, we demonstrate that the long-range magnetic proximity effect is universal and observed in hybrid structures with diverse magnetic components and potential barriers of various thicknesses and compositions. We study hybrid structures consisting of a semimetal (magnetite Fe3O4) or dielectric (spinel NiFe2O4) ferromagnet and a CdTe quantum well separated by a nonmagnetic (Cd,Mg)Te barrier. The proximity effect is manifested in the circular polarization of the photoluminescence corresponding to the recombination of photoexcited electrons with holes bound to shallow acceptors in the quantum well induced by magnetite or spinel itself, in contrast to interface ferromagnet in case of metal-based hybrid systems. A nontrivial dynamics of the proximity effect is observed in the studied structures due to recombination-induced dynamic polarization of electrons in the quantum well. It enables the determination of the exchange constant Δexch ≈ 70 μeV in a magnetite-based structure. The universal origin of the long-range exchange interaction along with the possibility of its electrical control offers prospects for the development of low-voltage spintronic devices compatible with existing solid-state electronics. [ABSTRACT FROM AUTHOR]

In highly doped semiconductor quantum wells (QWs), electrons populate various energy states from different subbands and, therefore, several optical intersubband transitions (ISBTs) can occur simultaneously. Coulomb coupling between these ISBTs gathers the strength of all the individual transitions and concentrates all the oscillator strength in a single collective excitation: the multisubband plasmon (MSP). MSPs are an excellent platform for the study of collective and exotic effects in semiconductors and for the demonstration of novel device concepts. Indeed, the high electronic densities involved in the collective excitation greatly enhance the coupling strength and enable the ultra-strong coupling regime between MSPs and either optical modes in a cavity or phonons in the semiconductor. In this Perspectives paper, after addressing the basic physics of MSPs and the state of the art, we outline the most promising paths for the research community in this topic from the point of view of basic physics, material platforms, and applications of MSPs. [ABSTRACT FROM AUTHOR]

We consider the problem of analyzing spin-flip qubit gate operation in the presence of Random Telegraph Noise (RTN). Our compressive approach is the following. By using the Feynman disentangling operators method, we calculate the spin-flip probability of qubit driven by different kinds of composite pulses, e.g., Constant pulse (C-pulse), Quantum Well pulse (QW-pulse), and Barrier Potential pulse (BP-pulse) in the presence of RTN. When composite pulses and RTN act in the x-direction and z-direction respectively, we calculate the optimal time to achieve perfect spin-flip probability of qubit. We report that the highest fidelity of spin-flip qubit can be achieved by using C-pulse, followed by BP-pulse and QW-pulse. For a more general case, we have tested several pulse sequences for achieving high fidelity quantum gates, where we use the pulses acting in different directions. From the calculations, we find that high fidelity of qubit gate operation in the presence of RTN is achieved when QW-pulse, BP-pulse, and C-pulse act in the x-direction, y-direction, and z-direction, respectively. We extend our investigations for multiple QW and BP pulses while choosing the C-pulse amplitude constant in the presence of RTN. The results of calculation show that 98.5 % fidelity can be achieved throughout the course of RTN that may be beneficial for quantum error correction. [ABSTRACT FROM AUTHOR]

A photovoltaic device fabricated with conventional zincblende materials can use the Type-II quantum well structure, which spatially separates electrons and holes, to reduce their recombination rate. In order to obtain higher power conversion efficiency, it is desirable to preserve more energetic carriers by engineering a phonon "bottleneck," a mismatch between the gaps in the well and barrier phonon structure. Such a mismatch leads to poor phonon transport and therefore prevents energy from leaving the system in the form of heat. In this paper, we perform a superlattice phonon calculation to verify the "bottleneck" effect and build on this a model to predict the steady state of the hot electrons under photoexcitation. We describe the electrons and phonons with a coupled Boltzmann equation system and numerically integrate it to get the steady state. We find that inhibited phonon relaxation does lead to a more out-of-equilibrium electron distribution and discuss how this might be enhanced. We examine the different behaviors obtained for various combinations of recombination and relaxation rates and their experimental signatures. [ABSTRACT FROM AUTHOR]

The carrier recombination behavior of GaN-based blue laser diodes (LDs) is studied and analyzed by experiments and simulation calculations before lasing, with a particular focus on the role of Auger recombination. It is found that Auger recombination plays a crucial role in the decrease in differential efficiency and threshold current of GaN-based blue LDs. The theoretical calculation results show that a large Auger recombination rate may lead to a dominant recombination channel before lasing, which could exceed the radiation recombination and result in an obvious decrease in the differential efficiency. Such a high Auger recombination will dissipate a large number of carriers in the quantum well, resulting in deterioration of device performance, a higher threshold current and a lower efficiency. This work presents a method to evaluate Auger recombination through differential efficiency and also provides evidence that suppressing the Auger recombination rate is beneficial to improve the performance of blue LDs. [ABSTRACT FROM AUTHOR]

The aim of the present work is to demonstrate the applicability of machine learning techniques and in particular neural network quantum states in the context of loop quantum gravity, albeit for a simplified theory. We consider 3-dimensional Euclidean gravity in a gauge theoretical formulation in a certain weak coupling limit due to Smolin, and show that the gauge group becomes Abelian, resulting in U (1) 3 BF-theory. The theory is quantised using loop quantum gravity methods. The kinematical degrees of freedom are truncated, on account of computational feasibility, by fixing a graph and deforming the algebra of the holonomies to impose a cutoff on the charge vectors. This leads to a quantum theory related to U q (1) 3 BF-theory. The effect of imposing the cutoff on the charges is examined. We also implement the quantum volume operator of 3d loop quantum gravity. Most importantly we compare two constraints for the quantum model obtained: a master constraint enforcing curvature and Gauß constraint, as well as a combination of a quantum Hamilton constraint constructed using Thiemann's strategy and the Gauß master constraint. The two constraints are solved using the neural network quantum state ansatz, demonstrating its ability to explore models which are out of reach for exact numerical methods. The solutions spaces are quantitatively compared and although the forms of the constraints are radically different, the solutions turn out to have a surprisingly large overlap. We also investigate the behavior of the quantum volume in solutions to the constraints. [ABSTRACT FROM AUTHOR]

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active region carrier density (n), causing the electrical efficiency droop onset to occur at low current densities. Here, we present an approach to reduce the internal electric fields (Eint) in c-plane QWs by placing doped p-type and n-type GaN barriers close to the QW. The reduced Eint also allows a thick QW active region design, which helps to lower n to further reduce the droop. The concept of using doped barriers to control Eint is explained using theory and device simulations. Following that, multiple series of thick single QW (SQW) LEDs were grown and characterized. Key parameters in the epitaxial design such as the doping levels and the relative position of the doped barriers were systematically studied and optimized. By using optimized doped barriers and a thick SQW, c-plane LEDs with a low-efficiency droop of 14% at 300 A/cm2 [with respect to the peak external quantum efficiency (EQE)] and a high peak EQE of 49% were demonstrated. [ABSTRACT FROM AUTHOR]

Trench defects, resulting in low emission efficiency in green and longer spectrum ranges, are widely observed in III-nitride alloy multiple quantum wells (MQWs), particularly in those with high indium content. There is a lack of understanding of the atomic formation mechanism of trench defects; however, it is crucial to the efficiency of devices. Here, we provided a thermodynamic analysis through first-principles calculations based on the density functional theory combined with experimental confirmation to reveal the atomic formation mechanism of trench defects in the InGaN MQWs system. The In-rich region is easy to form and induces basal plane stacking faults (BSFs) at the interface between the InGaN quantum well and the GaN quantum barrier (QB). The boundary between BSF and non-BSF regions exhibits a much slower growth rate due to the formation of homoelementary bonds, resulting in a V-shaped groove shape. Based on high-angle annular dark field scanning transmission electron microscopy, we observe the trench defects originating from the thick GaN QB layer due to the formation of closed-loop V-shaped grooves and the BSF. Besides, the cathodoluminescence measurements show that the InGaN QW within the defect has excess indium and poor crystal quality. [ABSTRACT FROM AUTHOR]

III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocations. While most work to date has focused on 1.3 μm InAs/GaAs QDs, InP QDs have also aroused interest in lasers emitting at visible wavelengths. Molecular beam epitaxy (MBE) enables the growth of high-density InP/AlGaInP QDs on exact (001)-oriented GaAs substrates but requires a relatively low substrate temperature of <500 °C. The low substrate temperature used for phosphide growth in MBE leads to degraded optical properties and makes post-growth annealing a crucial step to improve the optical quality. Here, we report the exceptional thermal stability of InP/AlGaInP QDs grown using MBE, with up to 50× improvement in room temperature photoluminescence intensity with the optimization of annealing temperature and time. We also demonstrate the room temperature pulsed operation of InP multiple quantum dot (MQD) lasers on GaAs (001) emitting close to 735 nm with Jth values of 499 A/cm2 after annealing, a factor of 6 lower than their as-grown counterparts and comparable to such devices grown by MOCVD. In0.6Ga0.4P single quantum well (SQW) lasers on GaAs (001) also exhibit a substantial reduction in Jth from 340 A/cm2 as-grown to 200 A/cm2 after annealing, emitting at 680 nm under pulsed operation conditions. This work shows that post-growth annealing is essential for realizing record-performance phosphide lasers on GaAs grown by MBE for applications in visible photonics. [ABSTRACT FROM AUTHOR]

Ternary semiconductors such as InGaN thin films, quantum wells, and superlattices commonly exhibit alloy fluctuations that become increasingly pronounced with higher In-content. The thickness fluctuations of quantum wells and their thin cap-layers further introduce nanoscale inhomogeneities that alter the potential landscape. In this work, we present a combined theoretical and experimental study of InGaN single quantum wells with thin GaN cap-layers to unravel the influence of cap-layer thickness, compositional inhomogeneity, and thickness fluctuations on their electronic and optical properties. A pronounced spectral shift of quantum well emission for thin cap-layers between 1 and 10 nm is observed by micro-photoluminescence spectroscopy. The origin of this shift is explained by calculations of electronic band profiles and probability density overlap of carriers in the quantum well. The impact of alloy fluctuations and homogeneity for different cap-layer thicknesses is studied on both the microscale and nanoscale using UV micro-Raman scattering and tip-enhanced Raman spectroscopy (TERS). On the microscale, the alloy composition as determined by micro-Raman mapping appears very homogeneous except for the thinnest 1 nm cap-layer where small fluctuations are visible. On the nanoscale, TERS reveals local fluctuations on a 20–30 nm length scale. The influence of the cap-layer thickness on the TERS spectra is discussed regarding both the nanoscale homogeneity and the depth resolution of the near-field Raman scattering technique. Our results demonstrate the capabilities of TERS to resolve nanoscale thickness fluctuations and compositional inhomogeneities in ultra-thin semiconductor layers, even when they are buried by thin cap-layers with thicknesses below 10 nm. [ABSTRACT FROM AUTHOR]

Silicon photonics is a promising technology for the fabrication of dense photonic chips, thanks to the very mature silicon industry. The direct epitaxial growth of III–V lasers on silicon is one of the main challenges for the realization of compact and robust mid-infrared sensors based on photonic integrated circuits. The crystal defects arising from this heteroepitaxial growth affect the laser performance and, therefore, need to be mitigated but also studied to better understand their impact on the laser operation. Here, we studied the effect of threading dislocations on laser performance by comparing the series of GaSb-based diode lasers grown on native GaSb and Si substrates with different numbers of quantum wells (nQW) in their active zones. As expected, the laser threshold currents are higher in the case of diode lasers on Si, and they rapidly vary with nQW. Still, the lowest threshold current densities are achieved with nQW = 1 for both substrates. With the help of a theoretical gain model, we attribute these results to the fact that dislocations create non-radiative recombination but do not introduce additional optical losses. This work allows a better understanding of the origin of performance degradation and the decision to be made regarding the heterostructure design. [ABSTRACT FROM AUTHOR]

MgZnO barriers are commonly applied to passivate wurtzite ZnO films to enhance electron mobility, while the Mg mole fraction x is usually controlled below 0.4 to avoid phase separation. Few theoretical analyses have focused on electron mobility at large x since the phase separation leads to a complex scattering mechanism. This work investigates the effects of asymmetric MgZnO barriers on electron mobility, which is one source of complexity. Four asymmetric quantum wells simultaneously contribute to the electron mobility in proportions when the wurtzite and rock salt coexist in the mixed-phase MgZnO barriers with large Mg mole fractions. Besides, built-in electric fields also contribute to the asymmetry by tilting the bands. The polar optical phonon-limited electron mobility in asymmetric MgxZn1−xO/ZnO/Mg0.45Zn0.55O quantum wells is simulated between 176 and 333 cm2/V s as x ranges from 0.1 to 1. Our calculations show that confined optical phonons play a leading role in the quantum well with wurtzite barriers. Interface optical phonons are primary in the wells with rock salt barriers since most electrons are pushed close to the interface by the strong built-in electric field. The results indicate that wurtzite barriers are more favorable to achieving stable high mobility above 238 cm2/V s as the Mg mole fraction ranges from 0.14 to 0.33, which is commonly applied in practice. [ABSTRACT FROM AUTHOR]

The semiconductor-to-metal transition (SMT) due to excitons exciton mott transition (EMT) in GaAs/Al 0. 3 Ga 0. 7 As asymmetric double quantum well (ADQW) has been studied theoretically by tuning direct (DX) and indirect (IDX) exciton densities using variation technique combined with the Monte Carlo approximation. The interaction of the optically pumped exciton densities is accounted for through the Thomas–Fermi (TF) dielectric screening and compared with Hartree–Fock (HF) screening. The screening effects of IDX at the barrier regime have been accounted for through size-dependent screening. The important characteristics of EMT, such as (i). binding energy and (ii), diamagnetic susceptibility have been studied in both coupled ( L b = 5 0 Å) and isolated ( L b = 2 0 0 Å) regimes of ADQW. The effect of asymmetry on the EMT of DX (IDX) is significant only for 1 < σ < 3 in the case of the coupled regime of ADQW, which may be due to the dynamic tunneling mechanism. The impact of the screening among the exciton densities to bring out the avalanche breakdown of excitons at the critical concentration has been studied for different kinds of excitons. [ABSTRACT FROM AUTHOR]

In this paper, we study the localization of an electron in a binary quantum system formed by a pair of quantum dots (QDs). The traditional theoretical consideration of such systems is limited to the symmetrical case when QDs in such double quantum dot (DQD) are assumed identical in all respects. In this paper, we model the effects of breaking QD similarities in a DQD by studying two-dimensional (2D) DQDs as a double quantum well (DQW). This is done by solving the Schrödinger equation, with parameters chosen to describe an InAs/GaAs heterostructure. We calculate the energy spectrum of the electron confinement and the spectral distribution of localized/delocalized spatial states. Both symmetric and asymmetric QW shapes are considered and their effects are compared. The effects of symmetry breaking are explained within the framework of the two-level system theory. We delineate the QW weak and strong coupling cases in DQW. In particular, we show that the coherence in ideal DQW is unstable in the case of a weak QW coupling. Within the framework of the proposed approach, a charge qubit realized on a DQD is discussed and, as an example, a qubit based on an almost ideal DQD is proposed. [ABSTRACT FROM AUTHOR]

We analyze the asymmetric doping‐dependent electron mobility μ of GaAs/InGaAs/GaAs quantum well field‐effect transistor (QWFET) structure. We consider doping concentrations, nd1 and nd2, in the substrate and surface barriers, respectively, and study μ as a function of nd2, taking (nd1 + nd2) unchanged. An increase in nd2 decreases nd1, yielding interesting changes in the occupation of subbands. For well width W < 164 Å, μ is due to single subband occupancy (SSO). Around W = 164 Å, there occurs first SSO, then double subband occupancy (DSO), and again SSO with an increase in nd2. Near the transition of subbands, abrupt discontinuities in μ arise due to inter‐subband effects. Thus, high to low and then high values of μ are obtained, displaying almost flat‐like variations, symmetric about |nd2 − nd1| = 0. As W becomes wider, complete DSO occurs throughout the range of nd2 having reduced μ. Alternatively, keeping nd1 unchanged and by increasing nd2, μ raises due to enhanced N s , with a drop near the transition from SSO to DSO. Under SSO, μ is controlled by the ionized impurity and alloy disorder scatterings, while under DSO, the impurity scattering determines μ. Our analysis on μ can help to examine the inter‐subband effects on device characteristics of the QWFET system. [ABSTRACT FROM AUTHOR]

This research explores a comprehensive examination of gate underlap incorporated strained channel Cylindrical Gate All Around Nanowire FET having enriched performances above the requirement of the 2 nm technology node of IRDS 2025. The device installs a combination of strain engineering based quantum well barrier system in the channel region with high-k spacers sandwiching the device underlaps and stack high-k gate-oxide. The underlaps are prone to parasitic resistance and various short channel effects (SCEs) hence, are sandwiched by HfO2 based high-k. This SCE degradations and a strong electric field in the drain-channel region is rendered controlling the leakages. The strain based Nanosystem engineering is incorporated with Type-II heterostructure band alignment inducing quantum well barrier mechanism in the ultra-thin cylindrical channel region creating an electrostatic charge centroid leading to energy band bending and splitting among the two-fold and four-fold valleys of the strained Silicon layer. This provides stupendous electron mobility instigating high current density and electron velocity in the channel. Thereby, the device is susceptible to on-current enhancement via ballistic transport of carriers and carrier confinement via succumbing of quantum charge carriers. The device transconductance, Ion, Ioff, Ion/Ioff ratio are measured and the output performance (ID-VDS) characteristics is determined providing emphatic enrichments in contrast to the existing gate all-around FETs as well as the 2 nm technology node data of IRDS 2025. Hence, the strained channel Nanowire FET device developed here is presented here as the device of the future for various digital applications, RF applications and faster switching speed. [ABSTRACT FROM AUTHOR]

Quasi‐2D perovskite quantum wells are increasingly recognized as promising candidates for direct‐conversion X‐ray detection. However, the fabrication of oriented and uniformly thick quasi‐2D perovskite films, crucial for effective high‐energy X‐ray detection, is hindered by the inherent challenges of preferential crystallization at the gas‐liquid interface, resulting in poor film quality. In addressing this limitation, a carbonyl array‐synergized crystallization (CSC) strategy is employed for the fabrication of thick films of a quasi‐2D Ruddlesden‐Popper (RP) phase perovskite, specifically PEA2MA4Pb5I16. The CSC strategy involves incorporating two forms of carbonyls in the perovskite precursor, generating large and dense intermediates. This design reduces the nucleation rate at the gas‐liquid interface, enhances the binding energies of Pb2+ at (202) and (111) planes, and passivates ion vacancy defects. Consequently, the construction of high‐quality thick films of PEA2MA4Pb5I16 RP perovskite quantum wells is achieved and characterized by vertical orientation and a pure well‐width distribution. The corresponding PEA2MA4Pb5I16 RP perovskite X‐ray detectors exhibit multi‐dimensional advantages in performance compared to previous approaches and commercially available a‐Se detectors. This CSC strategy promotes 2D perovskites as a candidate for next‐generation large‐area flat‐panel X‐ray detection systems. [ABSTRACT FROM AUTHOR]

We demonstrate a free-space amplitude modulator for mid-infrared radiation (λ ≈ 9.6 μm) that operates at room temperature up to at least 20 GHz (above the −3 dB cutoff frequency measured at 8.2 GHz). The device relies on the ultrafast transition between weak- and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal–metal optical resonators, that—all-together—behave as an electrically tunable surface. At negative bias, it operates in the weak light–matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons, and the device transitions to the strong-coupling regime. The modulator transmission remains linear with input radio frequency power in the 0–9 dBm range. The increase in optical powers up to 25 mW exhibit a weak beginning of saturation a little bit below. [ABSTRACT FROM AUTHOR]

We have started a measurement campaign of numerous methanol isotopologs in low-lying torsional states in order to provide extensive line lists for radio astronomical observations from an adequate spectroscopic model and to investigate how the intricate vibrationtorsion-rotation interactions manifest themselves in the spectra of different isotopic species. After CD3OH and CD3OD, we turn our focus to CH3OD, which is an important species for studying deuteration in prestellar cores and envelopes that enshroud protostars. Notably, deuteration is frequently viewed as a diagnostic tool for star formation. The measurements used in this study were obtained in two spectroscopic laboratories and cover large fractions of the 34 GHz-1.35 THz range. As done in previous studies, we employed a torsion-rotation Hamiltonian model for our analysis that is based on the rho-axis method. The resulting model describes the ground and first excited torsional states of CH3OD well up to quantum numbers J ⩽ 51 and Ka ⩽ 18. We derived a line list for radio astronomical observations from this model that is accurate up to at least 1.35 THz and should be sufficient for all types of radio astronomical searches for this methanol isotopolog in these two lowest torsional states. This line list was applied to a reinvestigation of CH3OD in data from the Protostellar Interferometric Line Survey of IRAS 16293–2422 obtained with the Atacama Large Millimeter/submillimeter Array. The new accurately determined value for the column density of CH3OD implies that the deuteration in methanol differs in its two functional groups by a factor of ~7.5. [ABSTRACT FROM AUTHOR]

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar 10 1 ¯ 1 QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm2/s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs. [ABSTRACT FROM AUTHOR]

2D Ruddlesden–Popper perovskites exhibit significant ferroelectricity due to the spontaneous polarization of organic molecules. By modulating the quantum well width in 2D Ruddlesden–Popper perovskites BA2MAn‐1PbnBr3n+1, a series of perovskites are adopted to realize adjustable polarization intensity and bandgap width. It is found that when n = 3, perovskite has the maximum polarization strength and optimal optoelectronic performance. In addition, flexible photodetectors with high mechanical stability are successfully fabricated based on n = 3 perovskite microplates. The fabricated flexible photodetectors exhibit high responsivity of 920 mA W−1 and detectivity of 1.02 × 1011 Jones, along with excellent flexibility and stability. After 3000 bending cycles, the photocurrent of n = 3 perovskites photodetector remains 81.8% of initial state. Besides, the photocurrent of n = 3 perovskites increase by 33 and 34 times after polarization at 0 and 3 V, respectively. And n = 3 perovskites exhibit a high polarization sensitivity with a current ratio of 2.09. On the basis of controllable regulation of the photocurrent through polarization, the application of flexible decoding optoelectronic devices by utilizing the correspondence between optical signals before and after polarization and binaries is achieved. These findings highlight the potential of modulating quantum well width in 2D Ruddlesden–Popper perovskites as a promising strategy for designing next‐generation flexible optoelectronic devices. [ABSTRACT FROM AUTHOR]

Topological photonics shows considerable promise in revolutionizing photonic devices through the use of topological phases, leading to innovations like topological lasers that enhance light control. One of the recent breakthroughs is reducing the size of these systems by utilizing lower‐dimensional boundary states, notably via higher‐order topological phases. This paper presents the experimental demonstration of a topological laser in an anomalous quadrupole topological phase, an instance of higher‐order phases. To facilitate this, a topological nanocavity with a quality factor near 6000 is engineered through a twisting operation. The topological nature of this system is validated by the calculation of nested Wannier centers and the emergency condition of corner states. The experimental observations reveal the manifestation of corner states and the achievement of single‐mode pulsed laser, driven by an optical gain from multiple quantum wells at telecommunication wavelengths and a temperature of 4 K. A lasing threshold of 23 µW and a cold quality factor of 1500 are deduced through rate equation. This work gives a new potential in the application of topological principles to advance nanophotonic technologies. [ABSTRACT FROM AUTHOR]

Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a strained germanium double quantum well. We sense individual charge transitions with a single-hole transistor. The vertical separation between the quantum wells provides a sufficient difference in capacitive coupling to distinguish quantum dots located in the top and bottom quantum wells. Tuning the vertical double quantum dot to the (1,1) charge state confines a single-hole in each quantum well beneath a single plunger gate. By simultaneously accumulating holes under two neighboring plunger gates, we are able to tune to the (1,1,1,1) charge state. These results motivate quantum dot systems that exploit the third dimension, opening new opportunities for quantum simulation and quantum computing. [ABSTRACT FROM AUTHOR]

The quantum efficiency of AlGaN ultraviolet light-emitting diodes declines (droops) at increasing operating powers due to Auger–Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron–phonon coupling and alloy disorder can induce bulk C coefficients as large as ∼ 10 − 31 cm6/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop. [ABSTRACT FROM AUTHOR]

To enhance the emission of GaN-based Micro-LEDs (μLEDs), we etched uniform nanorods (NRs) on the μLED surface and filled the nanorod gaps with spin-on glass (SOG) containing mixed Ag nanoparticles (NPs). The nanorod structure creates a conducive environment for close interaction between Ag NPs and quantum wells (QWs), facilitating the coupling of Ag NPs as localized surface plasmons (LSPs) with the QWs to enhance light emission. The SOG acts as an insulating layer between Ag NPs and NRs, preventing electron leakage, while also serving as a planarization material for the nanorod structure. This configuration allows for the fabrication of a planar Indium Tin Oxide layer without short-circuiting the nanorod structure. Compared to traditional planar Micro-LEDs, NR-μLEDs with SOG-encased Ag NPs exhibit a 50% increase in electroluminescence (EL) intensity and a 56% increase in photoluminescence (PL) intensity. This work paves the way for broader applications of LSP in μLEDs. [ABSTRACT FROM AUTHOR]

In this paper, a uniform nanorod (NR) array is etched onto the surface of Micro‐Light‐Emitting‐Diodes (µLEDs) and mix Ag nanoparticles (NPs) with QDs to fill the gaps between the nanorods. Simultaneously, the study utilizes graphene to connect individual nanorods and enhance current spreading. The nanorod array's structure significantly reduces the distance between the QDs and the quantum well (QW), reducing energy loss from the excitation light source through a non‐radiative energy transfer (NRET) mechanism. Additionally, the Ag NPs function as localized surface plasmons (LSPs), further enhancing the CCE of QDs via the absorption resonance. In this study, the effects of two types of Ag NPs are compared with different absorption resonance peaks on device performance. The results demonstrate that Ag NPs with absorption resonance peaks matching the emission wavelength of QDs play a more crucial role in the system. This configuration achieves a CCE of 77.78% for µLEDs with nanorod arrays, operating at a current of 10 mA. Compared to the conventional µLED structure with QDs only on the surface, the proposed method improves the CCE of µLEDs by an impressive 86.5%. This outcome underscores the significant contribution of the NR structure and LSPs in enhancing the CCE of QD‐µLEDs. [ABSTRACT FROM AUTHOR]

A significant topic of contemporary cryptography research and standardization is the development of public key crypto systems that resist attacks from quantum computers. Protocols and applications should start investigating the use of quantumresistant key exchange and encryption to protect the confidentiality of current communications against future quantum computers utilizing post-quantum cryptography for a particular key exchange. Since they operate harder and need fewer steps compared to conventional computers, quantum algorithms are more secure and robust. Attackers who use quantum computers have powerful computing capabilities, and a quantum allows for simple cryptographic system breaking. Security algorithms that are quantum secure are resistant to attacks from conventional, as well as quantum computers. This work has surveyed, summarized, and analysed previous research to provide readers of this study an integrated understanding of quantum cryptography. It also discusses quantum attacks, which could be used in place of more conventional cryptography techniques, such as quantum key distribution, which takes advantage of quantum mechanics' properties to ensure secure exchanges of the secret keys, and various quantum algorithms. With quantum computation becoming a very real threat, this should motivate more people to show an early interest in the future of cryptography. [ABSTRACT FROM AUTHOR]

Two previously undescribed cationic indole alkaloids, named ophiorrhines L (1) and M (2), was isolated from the Ophiorrhiza japonica. The structures were elucidated based on spectroscopic data and quantum calculations as well as X-ray crystallographic analysis. Alkaloids 1 and 2 exhibited moderate inhibitory activities on XOD (Xanthine Oxidase) with IC50 values 42.5 and 22.6 μM, respectively. [ABSTRACT FROM AUTHOR]

In this study, we introduced a new nonlocal complex derivative operator in fractal dimension based concurrently on the concept of "nonlocal generalized complex backward-forward coordinates" and the "product-like fractal measure". The quantization of the theory in fractal dimension leads to a higher order Schrödinger equation characterized by a higher order energy operator. As an illustration, we have discussed the cases of infinite quantum well and power-law potentials. Their associated zero-point energies were found to depend on the numerical value of the fractal dimension. For the infinite well, the decrease in zero-point energy with fractal dimension may result in the emission of large wavelengths photons observed experimentally in X-ray laser bursts emitted from the solid. [ABSTRACT FROM AUTHOR]

A quantum well (QW) diode that is capable of emitting light is also capable of absorbing light. In particular, the QW diode has broad electroluminescence and responsivity spectra and thus, a distinct spectral overlap exists, enabling the establishment of light communication using two identical QW diodes, namely, one as the transmitter and the other as the receiver. Here, we demonstrate a time-division multiplexing (TDM) wireless light communication using two identical green QW diodes that are defined by software as transmitter or receiver to achieve real-time underwater data transmission via the same optical channel. To further exploit this dual emission-detection characteristics, we unite energy conservation, gravitational field and energy diagram theory to arrive the conclusion that the gravitational field may play a key role in the irreversibility between light emission and detection of the QW diode. [ABSTRACT FROM AUTHOR]

We study recombination processes in nitride LEDs emitting from 270 to 540 nm with EQE ranging from 4% to 70%. We found a significant correlation between the LEDs' electro-optical properties and the degree of nanomaterial disorder (DND) in quantum wells (QWs) and heterointerfaces. DND depends on the nanoarrangement of domain structure, random alloy fluctuations, and the presence of local regions with disrupted alloy stoichiometry. The decrease in EQE values is attributed to increased DND and excited defect (ED) concentrations, which can exceed those of Shockley–Read–Hall defects. We identify two mechanisms of interaction between EDs and charge carriers that lead to a narrowing or broadening of electroluminescence spectra and increase or decrease EQE, respectively. Both mechanisms involve multiphonon carrier capture and ionization, impacting EQE reduction and efficiency droop. The losses caused by these mechanisms directly affect EQE dependencies on current density and the maximum EQE values for LEDs, regardless of the emission wavelength. Another manifestation of these mechanisms is the reversibility of LED degradation. Recombination processes vary depending on whether QWs are within or outside the space charge region of the p-n junction. [ABSTRACT FROM AUTHOR]