276 results on '"Pouget, V."'
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52. Validation of radiation hardened designs by pulsed laser testing and SPICE analysis
53. The Power Law Shape of Heavy Ions Experimental Cross Section
54. SEU Cross Section Calculation Based on Experimental Data of Another kind of Particle
55. Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses with Sub-Micrometer Spot Sizes
56. Characterization and modelling of laser-induced single-event burn-out in SiC power diodes
57. SEE laser testing using two-photon absorption: Modeling of charge deposition
58. Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement
59. Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa
60. Methodologies and Tools for the Evaluation of the Sensitivity to Radiation of SRAM-based FPGAs
61. Failure analysis of advanced CMOS technology: some trends, state of the art and future challenges
62. Fundamentals and recent developments on laser testing at the IMS laboratory
63. Test et analyse par faisceau laser: plateforme et applications
64. Tools and methodology development for pulsed laser fault injection in SRAM-based FPGAs
65. Using Pulsed laser for security purpose
66. OBIC technique for ESD defect localization : Influence of the experimental procedure
67. Radiation Hardened by Design RF Circuits Implemented in 0.13 μm CMOS Technology
68. Determining Realistic Parameters for theDouble Exponential Law that Models Transient Current Pulses
69. Performance impact of various SEE mechanisms in classical analog-to-digital converter architectures
70. Elaboration of a New Pulsed Laser System for SEE Testing
71. Characterization and modeling of laser-induced single-event burn-out in SiC power diodes
72. Impact of negative bias temperature instability on the single-event upset threshold of a 65nm SRAM cell
73. Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption
74. Pulsed-Laser Testing for Single-Event Effects Investigations
75. Building the Electrical Model of the Photoelectric Laser Stimulation of an NMOS Transistor in 90 nm Technology
76. Characterization and TCAD Simulation of 90nm Technology PMOS Transistor under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement
77. Effects of 1064 nm laser on MOS capacitor
78. Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology
79. Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL
80. Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement
81. Improving defect localization techniques with laser beam with specific analysis and set-up modules
82. Investigation on the SEL Sensitive Depth of an SRAM Using Linear and Two-Photon Absorption Laser Testing
83. 3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing
84. Comparison of single event transients generated at four pulsed-laser test facilities - NRL, IMS, EADS, JPL
85. Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory
86. Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser Two-Photon Absorption technique
87. Comparison of classical and two-photon photoelectric laser stimulation capabilities for failure analysis
88. Picosecond Single-Photon and Femtosecond Two-Photon Pulsed Laser Stimulation for IC Characterization and Failure Analysis
89. Investigation of single event burnout sensitive depth in power MOSFETS
90. Net integrity checking by optical localization techniques
91. Electrical modeling of the effect of beam profile for pulsed laser fault injection
92. Best test pattern failure analysis flow for functional logic failure localization by IR-OBIRCH technique
93. Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains
94. A new technique for SET pulse width measurement in chains of inverters using pulsed laser irradiation
95. Effect of physical defect on shmoos in CMOS DSM technologies
96. Dynamic Testing of an SRAM-Based FPGA by Time-Resolved Laser Fault Injection
97. Scan-based ATPG diagnostic and optical techniques combination: A new approach to improve accuracy of defect isolation in functional logic failure
98. Remote SEE Testing Capabilities with Heavy Ions and Laser Beams at CYCLONE-HIF and ATLAS Facilities
99. Study of single-event transients in high-speed operational amplifiers
100. Evaluation of recent technologies of non-volatile RAM
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