51. Photoresponse induced by Ge nanodots on SiO2/Si substrate
- Author
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Guillaume Amiard, Paola Castrucci, Maurizio De Crescenzi, Eugen Speiser, Isabelle Berbezier, Silvano Del Gobbo, Antoine Ronda, and Manuela Scarselli
- Subjects
72.40.+w ,78.56.−a ,73.63.Bd ,Photocurrent ,Materials science ,business.industry ,Photoconductivity ,Substrate (electronics) ,Condensed Matter Physics ,Settore FIS/03 - Fisica della Materia ,Electronic, Optical and Magnetic Materials ,law.invention ,Amorphous solid ,law ,Materials Chemistry ,Ceramics and Composites ,Optoelectronics ,Quantum efficiency ,Nanodot ,Crystallization ,business ,Short circuit - Abstract
Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO 2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO 2 /Si(100) substrate was dramatically enhanced up to a factor of 10 3 . Current–voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.
- Published
- 2010