Search

The Smart-Cut® process, based on ion implantation (hydrogen, helium) and wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally-induced splitting. Cavity growth by the Ostwald ripening mechanism and crack propagation are responsible for thermally-induced splitting. In this case, the splitting kinetics are controlled by hydrogen diffusion. In the second part, the latest results concerning new structures are presented. [ABSTRACT FROM AUTHOR]

This paper describes the development of a GeOxNy surface passivation of germanium, which is mandatory for microelectronics germanium-on-insulator (GeOI) substrate fabrication. Indeed, germanium surface reactivity in ambient atmosphere requires the development of Ge surface passivation in order to provide an electrically acceptable interface between the active layer and the buried oxide (BOX) of GeOI substrates. In this paper, GeOI substrates with a passivation interlayer between the Ge film and the BOX were fabricated using the Smart Cut™ technology. Plasma treatments produced a germanium oxynitride (GeOxNy) passivation interlayer with a nitrogen concentration up to 40% and thickness of 3 nm. Electrical activity in such GeOI active layer was investigated with pseudo-metal-oxide-semiconductor field effect transistor measurements. Electron mobility reaches a value of 670 cm2 V-1 s-1, notably higher than those typically reported on nonpassivated GeOI structures. [ABSTRACT FROM AUTHOR]

Abstract: Silicon carbide (SiC) still shows the best properties as substrate for the growth of GaN and its alloys but suffers from a very high price. An innovative alternative for this substrate are SiC/SiO2/Si (SiCOI) substrates, combining SiC and Si (silicon) substrate advantages thanks to the Smart Cut™ technology. These substrates consist of thin SiC layers (∼270nm) bonded on (001) Si substrates. Using SiCOI substrates, up to 3μm of GaN could be grown crack-free. The structures were investigated by atomic force microscopy (root mean square=0.86nm), high-resolution X-ray diffraction and low-temperature (20K) photoluminescence (PL) (FWHM (full-width at half-maximum)=4.9meV). Electroluminescence test heterostructures consisting of InGaN/GaN multiple quantum wells (MQWs) were also deposited on SiCOI. Room temperature PL measurements resulted in a QW emission at around 440nm with a FWHM of 7.8nm. At electrical excitation, blue light emission was observed. [Copyright &y& Elsevier]