Search

The f-driven temperature scales at the surfaces of strongly correlated materials have increasingly come into the focus of research efforts. Here, we unveil the emergence of a two-dimensional Ce Kondo lattice, which couples ferromagnetically to the ordered Co lattice below the P-terminated surface of the antiferromagnet CeCo2P2. In its bulk, Ce is passive and behaves tetravalently. However, because of symmetry breaking and an effective magnetic field caused by an uncompensated ferromagnetic Co layer, the Ce 4f states become partially occupied and spin-polarized near the surface. The momentum-resolved photoemission measurements indicate a strong admixture of the Ce 4f states to the itinerant bands near the Fermi level including surface states that are split by exchange interaction with Co. The temperature-dependent measurements reveal strong changes of the 4f intensity at the Fermi level in accordance with the Kondo scenario. Our findings show how rich and diverse the f-driven properties can be at the surface of materials without f-physics in the bulk.

New temperature scales and remarkable differences from bulk properties have increasingly placed the surfaces of strongly correlated f materials into the focus of research activities. Applying first-principles calculations and angle-resolved photoelectron spectroscopy measurements, a strong Rashba effect and spin-split surface states at the CeIn surface of the heavy-fermion superconductor CeIrIn5 are revealed. The unveiled 4f-derived electron landscape is remarkably distinct for surface and bulk Ce implying the existence of novel temperature scales near the surface region in this material. These results show that ab initio calculations can reliably predict the unusual electronic and spin structure of surfaces of strongly correlated 4f systems where Rashba spin-orbit-coupling phenomena emerge. It is suggested that the structural blocks of such materials can be combined with magnetically active layers for engineering of novel nanostructural objects with appropriate substrates where the diversity of f-driven properties can be applied for the development of novel functionalities.

Under temperature or pressure tuning, tetragonal EuPd2Si2 is known to undergo a valence transition from nearly divalent to nearly trivalent Eu accompanied by a volume reduction. Albeit intensive work, its origin is not yet completely understood. Here, we investigate the mechanism of the valence transition under volume compression by density functional theory calculations (DFT). Our analysis suggests that the transition is a consequence of an enhanced c−f hybridization between localized Eu 4f states and itinerant conduction states (Eu 5d, Pd 4d, and Si 3p) where the interplay of the electronic bandwidth, crystal field environment, Coulomb repulsion, Hund's coupling and spin-orbit coupling plays a crucial role for the transition to happen. The change in the electronic structure is intimately related to the volume reduction where Eu-Pd(Si) bond lengths shorten. In a next step we compare our DFT results to surface-sensitive photoemission data in which the mixed-valent properties of EuPd2Si2 are reflected in a simultaneous observation of divalent and trivalent signals from the Eu 4f shell.

The development of materials that are non-magnetic in the bulk but exhibit two-dimensional (2D) magnetism at the surface is at the core of spintronics applications. Here, we present the valence-fluctuating material EuIrSi, where in contrast to its non-magnetic bulk, the Si-terminated surface reveals controllable 2D ferromagnetism. Close to the surface the Eu ions prefer a magnetic divalent configuration and their large 4f moments order below 48 K. The emerging exchange interaction modifies the spin polarization of the 2D surface electrons originally induced by the strong Rashba effect. The temperature-dependent mixed valence of the bulk allows to tune the energy and momentum size of the projected band gaps to which the 2D electrons are confined. This gives an additional degree of freedom to handle spin-polarized electrons at the surface. Our findings disclose valence-fluctuating rare-earth based materials as a very promising basis for the development of systems with controllable 2D magnetic properties which is of interest both for fundamental science and applications.

Discovered in 1962, the divalent ferromagnetic semiconductor EuS (TC = 16.5 K, Eg = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostructures, and multilayer sequences and to combination with topological materials. Because detailed information on the electronic structure of EuS and, in particular, its evolution across TC is not well-represented in the literature but is essential for the development of new functional systems, the present work aims at filling this gap. Our angle-resolved photoemission measurements complemented with first-principles calculations demonstrate how the electronic structure of EuS evolves across a paramagnetic–ferromagnetic transition. Our results emphasize the importance of the strong Eu 4f–S 3p mixing for exchange-magnetic splittings of the sulfur-derived bands as well as coupling between f and d orbitals of neighboring Eu atoms to derive the value of TC accurately. The 4f–3p mixing facilitates the coupling between 4f and 5d orbitals of neighboring Eu atoms, which mainly governs the exchange interaction in EuS.

We present a combined experimental and theoretical study of the two-dimensional electron states at the iridium-silicide surface of the antiferromagnet GdIr2Si2 above and below the Néel temperature. Using angle-resolved photoemission spectroscopy (ARPES) we find a significant spin-orbit splitting of the surface states in the paramagnetic phase. By means of ab initio density-functional-theory (DFT) calculations we establish that the surface electron states that reside in the projected band gap around the ¯¯¯¯M point exhibit very different spin structures which are governed by the conventional and the cubic Rashba effect. The latter is reflected in a triple spin winding, i.e., the surface electron spin reveals three complete rotations upon moving once around the constant energy contours. Below the Néel temperature, our ARPES measurements show an intricate photoemission intensity picture characteristic of a complex magnetic domain structure. The orientation of the domains, however, can be clarified from a comparative analysis of the ARPES data and their DFT modeling. To characterize a single magnetic domain picture, we resort to the calculations and scrutinize the interplay of the Rashba spin-orbit coupling field with the in-plane exchange field, provided by the ferromagnetically ordered 4f moments of the near-surface Gd layer.

We present and discuss the methodology for modeling 4f photoemission spectra, 4f photoelectron diffraction (PED) patterns, and magnetic dichroism effects for rare-earth-based materials. Using PED and magnetic dichroism in photoemission, we explore the electronic and magnetic properties of the near-surface region of the valence-fluctuating material EuIr2Si2. For the Eu-terminated surface, we found that the topmost Eu layer is divalent and exhibits a ferromagnetic order below 10 K. The valency of the next Eu layer, that is the fifth atomic layer, is about 2.8 at low temperature that is close to the valency in the bulk. The properties of the Si-terminated surface are drastically different. The first subsurface Eu layer (fourth atomic layer below the surface) behaves divalently and orders ferromagnetically below 48 K. Experimental data indicate, however, that there is an admixture of trivalent Eu in this layer, resulting in its valency of about 2.1. The next deeper lying Eu layer (eighth atomic layer below the surface) behaves mixed valently, but the estimated valency of 2.4 is notably lower than the value in the bulk. The presented approach and obtained results create a background for further studies of exotic surface properties of 4f-based materials, and allow us to derive information related to valency and magnetism of individual rare-earth layers in a rather extended area near the surface.

Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k⋅p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.

The emergence of ferromagnetism in Rashba systems, where the evolving exchange interaction enters into competition with spin-orbit coupling, leads to a nontrivial spin-polarized electronic landscape with an intricate momentum-dependent spin structure, which is challenging to unveil. Here, we show a way to disentangle the contributions from the effective spin-orbit and exchange fields and thus to gain knowledge of the spin structure in ferromagnetic Rashba materials, which is required for spintronic applications. Our approach is based exclusively on spin-integrated photoemission measurements combined with a two-band modeling. As an example, we consider the mixed-valent material EuIr2Si2 which, while being nonmagnetic in the bulk, reveals strong ferromagnetism at the iridium-silicide surface where both spin-orbit and exchange magnetic interactions coexist. The combined effect of these interactions causes a complex band dispersion of the surface state which can be observed in photoemission experiments. Our method allows us to comprehensively unravel the surface-state spin structure driven by spin-orbit coupling at the ferromagnetic surface. This approach opens up opportunities to characterize the spin structure of ferromagnetic Rashba materials, especially where dedicated spin-resolved measurements remain challenging.

The development of materials that are non-magnetic in the bulk but exhibit two-dimensional (2D) magnetism at the surface is at the core of spintronics applications. Here, we present the valence-fluctuating material EuIr2Si2, where in contrast to its nonmagnetic bulk, the Si-terminated surface reveals controllable 2D ferromagnetism. Close to the surface the Eu ions prefer a magnetic divalent configuration and their large 4f moments order below 48 K. The emerging exchange interaction modifies the spin polarization of the 2D surface electrons originally induced by the strong Rashba effect. The temperature-dependent mixed valence of the bulk allows to tune the energy and momentum size of the projected band gaps to which the 2D electrons are confined. This gives an additional degree of freedom to handle spin-polarized electrons at the surface. Our findings disclose valence-fluctuating rare-earth based materials as a very promising basis for the development of systems with controllable 2D magnetic properties which is of interest both for fundamental science and applications.

The single crystal growth of 19 different intermetallic compounds within the LnT2X2 family (with Ln = lanthanides, T = Co, Ru, Rh, Ir, and X = Si, P) is presented, by employing a high-temperature metal-flux technique. The habitus of the obtained crystals is platelet-like with the crystallographic c direction perpendicular to the surface and with individual masses between 1 and 100 mg. The magnetic properties of these crystals are characterized by magnetization, heat-capacity, and resistivity measurements. These crystals form the materials basis for a thorough study of exciting surface properties by angle-resolved photoemission spectroscopy.

Strong spin-orbit coupling (SOC) in combination with a lack of inversion symmetry and exchange magnetic interaction proves to be a sophisticated instrument allowing efficient control of the spin orientation, energy and trajectories of two-dimensional (2D) electrons and holes trapped at surfaces or interfaces. Exploiting Kondo-related phenomena and crystal-electric-field effects at reduced dimensionalities opens new opportunities to handle their spin-dependent properties offering novel functionalities. We consider here a 2D Kondo lattice represented by a Si-Ir-Si-Yb (SISY) surface block of the heavy-fermion material YbIr2Si2. We show that the Kondo interaction with 4f moments allows finely tuning the group velocities of the strongly spin-polarized carriers in 2D itinerant states of this noncentrosymmetric system. To unveil the peculiarities of this interaction, we used angle-resolved photoemission measurements complemented by first-principles calculations. We established that the strong SOC of the Ir atoms induces spin polarization of the 2D states in SISY block, while the 2D lattice of Yb 4f moments acts as a source for coherent f−d interplay. The strong SOC and lack of inversion symmetry turn out to lead not only to the anticipated Rashba-like splitting of the 2D states, but also to spin splitting of the 4f Kramers doublets. They couple temperature-dependently to the spin-polarized 2D states and thereby guide the properties of the latter.

Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin-based devices. Spin–orbit and exchange–magnetic interactions (SOI and EMI) are two fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh2Si2 appears to be a unique model system, where concurrent SOI and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOI leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.

Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than charge in next generation electronics. Applying angle-resolved photoelectron spectroscopy, we show that the silicon surface of GdRh2Si2 bears two distinct 2DESs, one being a Shockley surface state, and the other a Dirac surface resonance. Both are subject to strong exchange interaction with the ordered 4f-moments lying underneath the Si-Rh-Si trilayer. The spin degeneracy of the Shockley state breaks down below ~90 K, and the splitting of the resulting subbands saturates upon cooling at values as high as ~185 meV. The spin splitting of the Dirac state becomes clearly visible around ~60 K, reaching a maximum of ~70 meV. An abrupt increase of surface magnetization at around the same temperature suggests that the Dirac state contributes significantly to the magnetic properties at the Si surface. We also show the possibility to tune the properties of 2DESs by depositing alkali metal atoms. The unique temperature-dependent ferromagnetic properties of the Si-terminated surface in GdRh2Si2 could be exploited when combined with functional adlayers deposited on top for which novel phenomena related to magnetism can be anticipated.