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71. Homoepitaxial growth of GaN using molecular beam epitaxy

88. Utilizing Low-Dose Transmission Electron Microscopy for Structure and Defect Identification in Group III – Nitride Electronic Devices

90. Utilizing Low-Dose Transmission Electron Microscopy for Structure and Defect Identification in Group III – Nitride Electronic Devices

93. Defects in Two Dimensional Crystals: An Ultra-high Resolution Aberration-corrected Electron Microscopy Study

94. Imaging Atomic Processes in Catalysts using a New High-Order Imaged-Corrected Environmental-TEM

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