Homoepitaxial growth of GaN using molecular beam epitaxy

Authors :: Gassmann, A.
Suski, T.
Newman, N.
Kisielowski, C.
Jones, E.
Weber, E.R.
Liliental-Weber, Z.
Rubin, M.D.
Helava, H.I.
Grzegory, I.
Bockowski, M.
Jun, J.
Porowski, S.
Source :: Journal of Applied Physics. August 15, 1996, Vol. 80 Issue 4, p2195, 4 p.
Publication Year :: 1996

Subjects :: Semiconductor films -- Production processes
Semiconductors -- Etching
Epitaxy -- Research
Physics

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