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54. Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Li, Guoli, Fan, Zizheng, André, Nicolas, Xu, Yongye, Xia, Ying, Iniguez, Benjamin, Liao, Lei, Flandre, Denis, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Li, Guoli, Fan, Zizheng, André, Nicolas, Xu, Yongye, Xia, Ying, Iniguez, Benjamin, Liao, Lei, and Flandre, Denis

Abstract

In this work, we explore the output conductance function (G-function) to interpret the device characteristics of two-dimensional (2D) semiconductor transistors. Based on analysis of the device output conductance, the carrier mobility, and the channel as well as contact resistance are extracted. Thereafter the current voltage (IV) characteristics of black phosphorous (BP) and MoS2 transistors from room to low temperature are modeled and compared to experiments. The G-function model proves its reliability and accuracy in parameter extraction and IV modeling of 2D transistors, regardless of the n- or p- type, the short- or long-channel and the Schottky or Ohmic contact. Moreover, this works shows its high potential in the device modeling and further circuit design of the 2D transistors, requiring only few parameters and simulating precise IV characteristics.

Published
2021

55. Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

Author

Universitat Rovira i Virgili, Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W.; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander, Universitat Rovira i Virgili, and Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W.; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander

Abstract

We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly considers the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 to 10.5 mu m.

Published
2021

56. New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Author

Universitat Rovira i Virgili, Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed, Universitat Rovira i Virgili, and Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed

Abstract

We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.

Published
2021

57. Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance

Author

Universitat Rovira i Virgili, Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexander; Iniguez, Benjamin; Borchert, James W., Universitat Rovira i Virgili, and Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexander; Iniguez, Benjamin; Borchert, James W.

Abstract

The development of organic thin-film transistors (TFTs) for high-frequency applications requires a detailed understanding of the intrinsic and extrinsic factors that influence their dynamic performance. This includes a wide range of properties, such as the device architecture, the contact resistance, parasitic capacitances, and intentional or unintentional asymmetries of the gate-to-contact overlaps. Here, we present a comprehensive analysis of the dynamic characteristics of the highest-performing flexible organic TFTs reported to date. For this purpose, we have developed the first compact model that provides a complete and accurate closed-form description of the frequency-dependent small-signal gain of organic field-effect transistors. The model properly accounts for all relevant secondary effects, such as the contact resistance, fringe capacitances, the subthreshold regime, charge traps, and non-quasistatic effects. We have analyzed the frequency behavior of low-voltage organic transistors fabricated in both coplanar and staggered device architectures on flexible plastic substrates. We show through S-parameter measurements that coplanar transistors yield more ideal small-signal characteristics with only a weak dependence on the overlap asymmetry. In contrast, the high-frequency behavior of staggered transistors suffers from a more pronounced dependence on the asymmetry. Using our advanced compact model, we elucidate the factors influencing the frequency-dependent small-signal gain and find that even though coplanar transistors have larger capacitances than staggered transistors, they benefit from substantially larger transconductances, which is the main reason for their superior dynamic performance.

Published
2021

62. Electrical Evolution of p-Type SnOx Film and Transistor Deposited by RF Magnetron Sputtering

Author

Zhou, Yuyan, Song, Yu, Hong, Ruohao, Liu, Xingqiang, Zou, Xuming, Iniguez, Benjamin, Flandre, Denis, Li, Guoli, and Liao, Lei

Abstract

In this work, by altering oxygen partial pressure (OPP) and sputtering power ( ${P}_{\text {RF}}$ ) of the radio frequency (RF) magnetron sputtering process, we investigate electrical evolution of the p-type SnOx film and transistor. Herein, combining device current–voltage (such as ON-state current and field-effect mobility), low-frequency noise (LFN), and gate-bias-stress characteristics, we find that the optimal OPP range is 4.8%–7.2% for the SnOx film deposition at ${P}_{\text {RF}}$ of 70 and 30 W. Based on X-ray photoelectron spectroscopy (XPS), the SnOx films deposited at high power (70 W) show less sensitivity to OPP, which leads to the slow transition of internal Sn2+, Sn4+ states, and a relatively large process window. Furthermore, the defect states inside the SnOx are analyzed. The oxygen interstitials (Oi), as deep acceptors, keep inactive regardless of the external bias. The oxygen vacancies (Vo) and the ionized Vo2+ states, which act as the electron traps, get suppressed and are attributed to the ambipolar behavior in the SnOx transistor, while increasing the OPP. This work benefit lies in a comprehensive analysis of the sputtering process parameters impact on SnOx film and transistor properties and their underlying defects.

Published
2023
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65. The 2021 flexible and printed electronics roadmap

Author

Bonnassieux, Yvan, primary, Brabec, Christoph J, additional, Cao, Yong, additional, Carmichael, Tricia Breen, additional, Chabinyc, Michael L, additional, Cheng, Kwang-Ting, additional, Cho, Gyoujin, additional, Chung, Anjung, additional, Cobb, Corie L, additional, Distler, Andreas, additional, Egelhaaf, Hans-Joachim, additional, Grau, Gerd, additional, Guo, Xiaojun, additional, Haghiashtiani, Ghazaleh, additional, Huang, Tsung-Ching, additional, Hussain, Muhammad M, additional, Iniguez, Benjamin, additional, Lee, Taik-Min, additional, Li, Ling, additional, Ma, Yuguang, additional, Ma, Dongge, additional, McAlpine, Michael C, additional, Ng, Tse Nga, additional, Österbacka, Ronald, additional, Patel, Shrayesh N, additional, Peng, Junbiao, additional, Peng, Huisheng, additional, Rivnay, Jonathan, additional, Shao, Leilai, additional, Steingart, Daniel, additional, Street, Robert A, additional, Subramanian, Vivek, additional, Torsi, Luisa, additional, and Wu, Yunyun, additional

Published
2021
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69. Precise modeling framework for short-channel double-gate and gate-all-around MOSFETs

Author

Borli, Hakon, Kolberg, Sigbjorn, Fjeldly, Tor A., and Iniguez, Benjamin

Subjects
Diffusion -- Analysis, Voltage -- Evaluation, Gates (Electronics) -- Usage, Metal oxide semiconductor field effect transistors -- Models, Business, Electronics, Electronics and electrical industries
Abstract

The article discusses a precise modeling framework for short-channel nanoscale double-gate (DG) and gate-all-around MOSFETs. A wide range of bias voltages from subthreshold to strong inversion are found to be covered by this framework and the drain current calculated by this model using a drift-diffusion transport mechanism are found to be in good agreement with the numerical simulations.

Published
2008

70. A quasi-two-dimensional compact drain-current model for undoped symmetric double-gate MOSFETs including short-channel effects

Author

Lime, Francois, Iniguez, Benjamin, and Moldovan, Oana

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Poisson distribution -- Usage, Silicon -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

A new model for the drain-current in double-gate metal-oxide-semiconductor (DG-MOS) transistors is presented. Findings reveal the validity of the proposed model in weak and strong inversions.

Published
2008

71. A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

Author

El Hamid, Hamdy Abd, Guitart, Jaume Roig, Kilchytska, Valeria, Flandre, Denis, and Iniguez, Benjamin

Subjects
Field-effect transistors -- Design and construction, Field-effect transistors -- Electric properties, Poisson's equation -- Analysis, Voltage -- Measurement, Business, Electronics, Electronics and electrical industries
Abstract

An analytical model, which was developed for the 3-D electrostatic potential for undoped FinFET by solving the Poisson equation including the mobile-change term, is described.

Published
2007

72. Explicit analytical charge and capacitance models of undoped double-gate MOSFETs

Author

Moldovan, Oana, Jimenez, David, Guitart, James Roig, Chaves, Ferney A., and Iniguez, Benjamin

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Metal oxide semiconductor field effect transistors -- Electric properties, Semiconductor doping -- Analysis, Gates (Electronics) -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

The article presents about an explicit, analytical charged and capacity models of undoped symmetrical double-gate (DG) MOSFET.

Published
2007

73. Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs

Author

Hamid, Hamdy Abd El, Guitart, Jaurne Roig, and Iniguez, Benjamin

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Voltage -- Analysis, Numerical analysis, Business, Electronics, Electronics and electrical industries
Abstract

Analytical physically based models for the threshold voltage and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs are developed. These models are found to have good agreement with the numerical simulations.

Published
2007

74. Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs

Author

El Hamid, Hamdy Abd, Iniguez, Benjamin, and Guitart, Jaume Roig

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Circuit design -- Analysis, Gates (Electronics) -- Design and construction, Poisson's equation -- Analysis, Circuit designer, Integrated circuit design, Business, Electronics, Electronics and electrical industries
Abstract

An analytical solution of two-dimensional Poisson's equation (in cylindrical coordinates) induced with mobile charge was used to derive analytical physically based model for the threshold voltage, subthreshold swing, and drain-induced barrier lowering (DIBL) of undoped cylindrical gate-all-around MOSFETs. The model for DIBL, subthreshold swing, and threshold voltage rolloff parameters were verified by comparison with 3-D numerical simulations and found to be in close agreement with the numerical simulations.

Published
2007

75. Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs

Author

Moldovan, Oana, Iniguez, Benjamin, Jimenez, David, and Roig, Jaume

Subjects
Metal oxide semiconductor field effect transistors -- Electric properties, Semiconductor doping -- Analysis, Numerical analysis, Business, Electronics, Electronics and electrical industries
Abstract

The analytical expressions of all total capacitances are evaluated by using the analytical and continuous charge model of cylindrical undoped surrounding-gate metal-oxide semiconductor field-effect transistors (MOSFETs). The small-signal parameters have an infinite order of continuity and the modeled capacitances have agreed well with the three-dimensional (3-D) numerical simulations in all operating regimes.

Published
2007

79. Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs

Author

Iniguez, Benjamin, Fjeldly, Tor A., Lazaro, Antonio, Danneville, Francois, and Deen, M. Jamal

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Approximation theory -- Usage, Gates (Electronics) -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

Developments in compact-modeling principles and solutions for nanoscale double-gate (DG) and gate-all-around (GAA) MOSFETs are presented and reviewed. Techniques are presented to extend these compact models to the high-frequency regime and to study the main high-frequency parameters and characteristics such as noise.

Published
2006

83. New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Author

Iniguez, Benjamin, primary, Nathan, Arokia, additional, Kloes, Alexander, additional, Bonnassieux, Yvan, additional, Romanjek, Krunoslav, additional, Charbonneau, Micael, additional, Steen, Jan Laurens Van Der, additional, Gelinck, Gerwin, additional, Gneiting, Thomas, additional, Mohamed, Firas, additional, Ghibaudo, Gerard, additional, Cerdeira, Antonio, additional, Estrada, Magali, additional, Mijalkovic, Slobodan, additional, and Nejim, Ahmed, additional

Published
2021
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84. Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Author

Iniguez, Benjamin, Pallares, Josep, Jimenez, David, Roig, Jaume, Hamid, Hamdy A., and Marsal, Lluis F.

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Gates (Electronics) -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

An analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages is presented. The model shows good agreement with the numerical exact solution obtained from the new charge control model, which is validated by comparison with three-dimensional numerical simulations.

Published
2005

87. Nanoscale FETs

Author

Moldovan, Oana, primary, Lázaro, Antonio, additional, Danneville, François, additional, Picos, Rodrigo, additional, Nae, Bogdan, additional, Iniguez, Benjamin, additional, and Deen, M. Jamal, additional

Published
2012
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88. Improved direct determination of MOSFET saturation voltage using Fourier techniques

Author

Picos, Rodrigo, Roca, Miquel, Iniguez, Benjamin, and Garcia-Moreno, Eugenio

Subjects
Metal oxide semiconductor field effect transistors -- Electric properties, Metal oxide semiconductor field effect transistors -- Product development, Fourier analysis, Business, Electronics, Electronics and electrical industries
Abstract

An important issue for MOSFET modeling is to obtain the right value of the saturation voltage V(sub DSAT) and the usual procedures are blocked by the noise introduced in the derivation steps. An alternative method is developed using Fourier methods involving a noise reduction technique to improve the accuracy of the derivatives.

Published
2004

91. SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250 degree C

Author

Dessard, Vincent, Iniguez, Benjamin, Adriaensen, Stephane, and Flandre, Denis

Subjects
Silicon-on-isolator -- Analysis, Metal oxide semiconductor field effect transistors -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Occurrence of Lorentzian-like noise component, depending on bias and temperature conditions was observed. General considerations about low-noise high temperature analog circuits are discussed.

Published
2002

92. Deep-submicrometer DC-to-RF SOI MOSFET macro-model

Author

Iniguez, Benjamin, Raskin, Jean-Pierre, Demeus, Laurent, Neve, Amaury, Vanhoenacker, Danielle, Simon, Pascal, Goffioul, Michael, and Flandre, Denis

Subjects
Metal oxide semiconductor field effect transistors -- Research, Silicon-on-isolator -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A submicrometer RF fully depleted SOI MOSFET macro model is proposed. The model is based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design (CAD) model for the intrinsic device.

Published
2001

100. Foreword

Author

Iniguez, Benjamin, primary, Marsal, Lluis F., additional, Escobosa, Arturo, additional, and Guarin, Fernando, additional

Published
2020
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