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16,365 results on '"Inoue, M."'

705. Fabrication of a double-sided silicon microstrip detector with an ONO capacitor dielectric film

Author

Saitoh, Y., Akamine, T., Inoue, M., Yamanaka, J., Kadoi, K., Takano, R., Kojima, Y., Miyahara, S., Kamiya, M., Ikeda, H., Matsuda, T., Tsuboyama, T., Ozaki, H., Tanaka M., Iwasaki, H., Haba, J., Higashi, Y., Yamada, Y., Okuno, S., Avrillon, S., Nemoto, T., Fukunishi, I., and Asano, Y.

Subjects
Silicon diodes -- Design and construction, Dielectric films -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

Double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by an oxide-nitride-oxide (ONO) dielectric film were fabricated using newly developed processing techniques. We report on the processing techniques and some characteristics of the detectors fabricated in the above process.

Published
1996

712. Very Long Baseline Interferometric Observations made with an Orbiting Radio Telescope

Author

Levy, G. S., Linfield, R. P., Ulvestad, J. S., Edwards, C. D., Jordan, J. F., Di Nardo, S. J., Christensen, C. S., Preston, R. A., Skjerve, L. J., Stavert, L. R., Burke, B. F., Whitney, A. R., Cappallo, R. J., Rogers, A. E. E., Blaney, K. B., Maher, M. J., Ottenhoff, C. H., Jauncey, D. L., Peters, W. L., Nishimura, T., Hayashi, T., Takano, T., Yamada, T., Hirabayashi, H., Morimoto, M., Inoue, M., Shiomi, T., Kawaguchi, N., and Kunimori, H.

Published
1986

736. New profiled silicon PIN photodiode for scintillation detector

Author

Saitoh, Y., Akamine, T., Satoh, K., Inoue, M., Yamanaka, J., Aoki, K., Miyahara, S., Kamiya, M., Ikeda, H., Avrillon, S., and Okuno, S.

Subjects
Photodetectors -- Evaluation, Semiconductor doping -- Methods, Semiconductors, Effect of radiation on -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Silicon photodiodes (planar PIN) are employed for the read out of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In this study, several types of PIN photodiodes, in which a [p.sup.+] layer was formed by MLD (MLD-PIN) or B[F.sub.2] ion implantation (B[F.sub.2] I/I-PIN), have been examined. The MLD-PIN has a shallow [p.sup.+] junction depth ([x.sub.j]) with sufficient high surface concentration, and simply and easily provides good performance for a short-wavelength photo sensitivity.

Published
1995

737. Phosphatase is responsible for run down, and probably G protein-mediated inhibition of inwardly rectifying K+ currents in guinea pig chromaffin cells

Author

Inoue, M. and Imanaga, I.

Subjects
Chromaffin cells -- Research, Ion channels -- Research, G proteins -- Physiological aspects, Phosphatases -- Physiological aspects, Biological sciences, Health
Abstract

Patch clamp technique studies of the mechanism of G protein-mediated suppression of an inwardly rectifying K+ current (I(IR)) in adrenal chromaffin cells show that kinase and phosphatase mediate the inhibition of K+ channel and the rundown of I(IR). The aluminum fluoride complex does not intensely inhibit I(IR), as it interferes with phosphatase activity. Inhibition of I(IR) by G protein activation proceeds through the improved activity of phosphatase.

Published
1995

748. Behavior of three-dimensional boundary layers in a radial inflow turbine scroll

Author

Hara, K., Furukawa, M., and Inoue, M.

Subjects
Fluid dynamic measurements -- Research, Turbines -- Research, Science and technology
Abstract

A detailed experimental investigation was carried out to examine the three-dimensional boundary layer characteristics in a radial inflow turbine scroll. Some basic flow phenomena and growth of secondary flow were also investigated. In the inlet region of the scroll, the incoming boundary layer begins to have a skewed nature, namely the radially inward secondary flow caused by the radial pressure gradient. From the inlet region to one third of the scroll circumference, the secondary flow grows so strongly that most of the low-momentum fluid in the incoming boundary layer is transported to the nozzle region. The succeeding elimination of the low-momentum fluid in the boundary layer suppresses growth of the boundary layer farther downstream, where the boundary layer shows a similar velocity profile. The distributions of the boundary layer properties in the scroll correspond well to those of the flow properties at the nozzle. The behavior of the boundary layer in the scroll is found to affect the circumferential nonuniformity of the nozzle flow field.

Published
1994

749. Transient thermoelectric effect in bismuth single crystals

Author

Sasaki, M., Tai, G.X., Inoue, M., and Bidadi, H.

Subjects
Crystals -- Electric properties, Thermoelectric apparatus and appliances -- Usage, Physics
Abstract

The decay curves of the photoinduced transient thermoelectric effect (TTE) in bismuth single crystals exhibits multiple relaxation processes for photogenerated electrons and hole thermal diffusion. Mobility, mass and electronic properties of carriers are evaluated from the relaxation periods.

Published
1994

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