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Transient thermoelectric effect in bismuth single crystals

Authors :
Sasaki, M.
Tai, G.X.
Inoue, M.
Bidadi, H.
Source :
Journal of Applied Physics. May 1, 1994, Vol. 75 Issue 9, p4520, 7 p.
Publication Year :
1994

Abstract

The decay curves of the photoinduced transient thermoelectric effect (TTE) in bismuth single crystals exhibits multiple relaxation processes for photogenerated electrons and hole thermal diffusion. Mobility, mass and electronic properties of carriers are evaluated from the relaxation periods.

Details

ISSN :
00218979
Volume :
75
Issue :
9
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.16029664