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This study was conducted with the aim of developing a circuit system that enables the measurement of the moisture content and ion concentration with a simple circuit configuration. Our previous studies have shown that soil can be represented by an equivalent circuit of a parallel circuit of resistors and capacitors. We designed a circuit that can convert the voltage transient characteristics of the soil when a current is applied to it into a square wave and output frequency information and developed an algorithm to analyze the two types of square waves and calculate R and C. Normal operation was confirmed in the range of 10 kΩ–1 MΩ for the designed circuit, and the calculation algorithm matched within a maximum error of 5%, thus confirming the validity of the program. These successfully confirmed the changes in the water content and ionic concentration. The soil moisture content measurement succeeded in measuring a maximum error of about 10%, except at one point, and the soil ion concentration measurement succeeded in measuring a maximum error of 6.6%. A new, simple, noise-resistant moisture content and ion concentration measurement circuit system with square wave output has been realized. [ABSTRACT FROM AUTHOR]

XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 μ s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must be as compact as possible to achieve a large imaging area in the limited space in satellites. Thus, we developed a new XRPIX device with the on-chip ADC, and evaluated its performances. As the results, the integral non-linearity was evaluated to be 6 LSB (least significant bit), equivalent to 36 eV. The differential non-linearity was less than 0.7 LSB, and input noise from the on-chip ADC was 5 e −. Also, we evaluated end-to-end performance including the sensor part as well as the on-chip ADC. As the results, energy resolution at 5.9 keV was 294 ± 4 eV in full-width at half maximum for the best pixel. [ABSTRACT FROM AUTHOR]

Multi-path interference causes depth errors in indirect time-of-flight (ToF) cameras. In this paper, resolving multi-path interference caused by surface reflections using a multi-tap macro-pixel computational CMOS image sensor is demonstrated. The imaging area is implemented by an array of macro-pixels composed of four subpixels embodied by a four-tap lateral electric field charge modulator (LEFM). This sensor can simultaneously acquire 16 images for different temporal shutters. This method can reproduce more than 16 images based on compressive sensing with multi-frequency shutters and sub-clock shifting. In simulations, an object was placed 16 m away from the sensor, and the depth of an interference object was varied from 1 to 32 m in 1 m steps. The two reflections were separated in two stages: coarse estimation based on a compressive sensing solver and refinement by a nonlinear search to investigate the potential of our sensor. Relative standard deviation (precision) and relative mean error (accuracy) were evaluated under the influence of photon shot noise. The proposed method was verified using a prototype multi-tap macro-pixel computational CMOS image sensor in single-path and dual-path situations. In the experiment, an acrylic plate was placed 1 m or 2 m and a mirror 9.3 m from the sensor. [ABSTRACT FROM AUTHOR]

This article describes an improvement in the noise reduction performance of a column correlated multiple sampling (CMS) readout circuit using interleaved pixel source follower for high-resolution and high-framerate CMOS image sensors (CISs). In this architecture, the time-interleaved operation of the two pixel source followers reduces the restrictions imposed by the settling time of the pixel source followers and extends the time for multiple sampling. The noise analysis indicates that this method has an advantage of enhanced noise reduction not only for thermal noise but also for 1/ƒ noise when a high-speed readout operation is required. The measurement of the noise performance of the 8K image sensor using the CMS with the interleaved pixel source follower method exhibits a low input-referred noise of 3.2 e− at 8K 120 frames per second, while 4.6 e− with the conventional single-source follower readout method. The measurement results match reasonably well with the analysis presented in this article, demonstrating the effectiveness of the interleaved pixel source follower method for high-resolution and high-framerate CISs. [ABSTRACT FROM AUTHOR]

A 7.1-μm-pitch lock-in pixel (LIP) CMOS image sensor (CIS) that is capable of simultaneously phasing with two different near-infrared-band (NIR-band) light pulses is developed for remote physiological measurement, particularly a heart rate variability (HRV) signal monitor. The proposed dual NIR-band lock-in operation is realized by a four-tap-wise charge modulation with adjacent two-tap LIPs by means of a column-interdigital pixel driving scheme combining with in-LIP lateral electric field modulators (LEFMs). For attaining the weak HRV signal, the implemented CIS achieves a subelectron temporal noise of 0.67 e−rms at 64 times correlated multiple sampling (CMS) and a high charge modulation contrast (MC) up to 96% at maximum. These remarkable properties primarily result from the in-LIP dark current and LEFM controlling optimizations proposed in device domain. The experimental results show that the developed CIS exhibits not only a 98.5% accuracy in HRV signal capture with −39.1-dB signal-to-background ratio (SBR) against a fluctuant brightness ambient light but also a moderate artificial motion robustness benefited from the proposed dual NIR-band lock-in technique. [ABSTRACT FROM AUTHOR]

Abstract We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, "XRPIX6E" equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts as a shield layer. XRPIX6E exhibits improved spectral performances both in the Event-Driven readout mode and in the Frame readout mode in comparison to previous devices. The energy resolutions in full width at half maximum at 6.4 keV are 236 ± 1 eV and 335 ± 4 eV in the Frame and Event-Driven readout modes, respectively. There are differences between the readout noise and the spectral performance in the two modes, which suggests that some mechanism still degrades the performance in the Event-Driven readout mode. [ABSTRACT FROM AUTHOR]

Abstract We have been developing monolithic active pixel sensors, named "XRPIX", based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed "XRPIX5b" with the largest imaging area of 21.9 mm × 13.8 mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46 e − (rms) in the frame readout mode. The gain variation was measured to be 1.2% (FWHM) among the pixels. We successfully obtain the X-ray image in the event-driven readout mode. [ABSTRACT FROM AUTHOR]

Ultrasensitive, rapid and selective diagnostic probes are urgently needed to overcome the limitations of traditional probes for norovirus (NV). Here, we report the detection of NV genogroup II via nucleic acid hybridization technology using a quantum dot (QD)-conjugated molecular beacon (MB) probe. To boost the sensitivity of the MB assay system, an ultrasensitive QD fluorophore with unique optical properties was synthesized, characterized and exploited as a fluorescence signal generator. Alloyed thioglycolic (TGA)-capped CdZnSeS QDs with a high photoluminescence (PL) quantum yield (QY) value of 92% were synthesized, and a modified silanization method was employed to encapsulate the thiol-capped QDs in a silica layer. The resulting highly luminescent alloyed SiO 2 -coated CdZnSeS QDs had a remarkable PL QY value of 98%. Transmission electron microscopy and dynamic light scattering confirmed the monodispersity of the alloyed nanocrystals, and zeta potential analysis confirmed their colloidal stability. Powder X-ray diffraction and PL lifetime measurements confirmed the surface modification of the QDs. The alloyed TGA-capped and SiO 2 -coated CdZnSeS QD-conjugated MB bioprobes detected extremely low concentrations of NV RNA. Ultrasensitive detection of low concentrations of NV RNA with a limit of detection (LOD) of 8.2 copies/mL in human serum and a LOD of 9.3 copies/mL in buffer was achieved using the SiO 2 -coated CdZnSeS QD-MB probes, an increase in sensitivity of 3-fold compared with the detection limit for NV RNA using TGA-capped CdZnSeS QD-MBs. The additional merits of our detection system are rapidity, specificity and improved sensitivity over conventional molecular test probes. [ABSTRACT FROM AUTHOR]

We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1–20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0. 68 keV and Al-K X-rays at 1. 5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1. 1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ∼ 18 e − (rms) and ∼ 13 e − (rms), respectively. [ABSTRACT FROM AUTHOR]

In robot vision, it is often desired to measure an area larger than the field of view of the camera, so the camera tends to be mounted on a mechanical pan/tilt platform. However, such mechanisms have a non-negligible response time compared to the frame rate of the camera. In this paper, we describe what we believe to be a new method that allows arbitrary and multiple gaze directions to be observed in a frame-by-frame manner based on a resonant mirror and a lock-in pixel image sensor. In the proposed method, while the gaze direction oscillates due to the resonance mirror, the image sensor makes an exposure of several hundreds of nanoseconds every time the gaze passes through the direction to be captured, and accumulates the captured signals. A prototype system was developed using a lock-in pixel image sensor with four image storage units called taps and a resonant mirror with a resonant frequency of 12 kHz. The system achieved both arbitrary control of the gaze direction in a frame-by-frame manner, and simultaneous capturing of four images with arbitrary gaze directions also in a frame-by-frame manner.

Significance: We present a motion-resistant three-wavelength spatial frequency domain imaging (SFDI) system with ambient light suppression using an 8-tap complementary metal-oxide semiconductor (CMOS) image sensor (CIS) developed at Shizuoka University. The system addresses limitations in conventional SFDI systems, enabling reliable measurements in challenging imaging scenarios that are closer to real-world conditions., Aim: Our study demonstrates a three-wavelength SFDI system based on an 8-tap CIS. We demonstrate and evaluate the system's capability of mitigating motion artifacts and ambient light bias through tissue phantom reflectance experiments and in vivo volar forearm experiments., Approach: We incorporated the Hilbert transform to reduce the required number of projected patterns per wavelength from three to two per spatial frequency. The 8-tap image sensor has eight charge storage diodes per pixel; therefore, simultaneous image acquisition of eight images based on multi-exposure is possible. Taking advantage of this feature, the sensor simultaneously acquires images for planar illumination, sinusoidal pattern projection at three wavelengths, and ambient light. The ambient light bias is eliminated by subtracting the ambient light image from the others. Motion artifacts are suppressed by reducing the exposure and projection time for each pattern while maintaining sufficient signal levels by repeating the exposure. The system is compared to a conventional SFDI system in tissue phantom experiments and then in vivo measurements of human volar forearms., Results: The 8-tap image sensor-based SFDI system achieved an acquisition rate of 9.4 frame sets per second, with three repeated exposures during each accumulation period. The diffuse reflectance maps of three different tissue phantoms using the conventional SFDI system and the 8-tap image sensor-based SFDI system showed good agreement except for high scattering phantoms. For the in vivo volar forearm measurements, our system successfully measured total hemoglobin concentration, tissue oxygen saturation, and reduced scattering coefficient maps of the subject during motion (16.5 cm/s) and under ambient light (28.9 lx), exhibiting fewer motion artifacts compared with the conventional SFDI., Conclusions: We demonstrated the potential for motion-resistant three-wavelength SFDI system with ambient light suppression using an 8-tap CIS., (© 2024 The Authors.)

This study aimed to achieve high range precision in the sub-100 µm order with time-of-flight (TOF) range imaging for 3-D scanners. The precision of a TOF range imager was improved using dual reference plane sampling (DRPS). DRPS using two short-pulse lasers reduces driver jitter, which limits the range precision below sub-100 µm. A proof-of-concept measurement system implemented using a TOF range imager demonstrated the reduction in driver jitters, resulting in reduced column-to-column variation in range precision. The developed system also achieved a high precision of 52 µm using a single frame and 27 µm using a 10-frame average.

Novel sulfur-doped graphitic carbon nitride quantum dots (S-gCNQDs) are synthesized using a single-source precursor in a one-step solvothermal process. The S-gCNQDs with a size of ~ 5-nm displayed a strong green intrinsic fluorescence at 512 nm when excited at 400 nm, with a quantum yield of ~ 33% in aqueous solution. The prepared S-gCNQDs and Ag 2 S nanocrystals were applied as innovative functional materials to fabricate a biosensor for virus detection based on the conjugation of specific anti-human influenza A monoclonal antibody to the S-gCNQDs and Ag 2 S NCs, respectively. In the presence of the influenza A virus, an interaction between the S-gCNQDs/Ag 2 S-labeled antibody resulted in the formation of a nanosandwich structure, which is accompanied by the fluorescence enhancement of the S-gCNQDs. The change in fluorescence intensity linearly correlats with the concentration of the influenza A virus (H1N1) in the 10 fg/mL to 1.0 ng/mL range, with a limit of detection of 5.5 fg/mL. The assay was applied to the assay of clinically isolated influenza A virus (H3N2/Yokohama) mixed with human serum. The obtained limit of detection was 100 PFU/mL within the detection range of 10 2 - 5 × 10 4 PFU/mL for the H3N2 virus. Graphical abstract.

In this paper, a quasi-simultaneous multi-focus imaging technique named simulfocus imaging is reported. This technique was developed for measuring an entire object distributed in the depth direction beyond the depth of field (DOF) with high resolution in a single shot. Simulfocus imaging can acquire multiple focal planes in one shot by synchronizing a tunable acoustic gradient index (TAG) lens and a lock-in pixel image sensor. The TAG lens is a tunable-focus lens whose focal position can be changed at a high speed of several tens to several hundreds of kilohertz. The lock-in pixel image sensor is a special image sensor that can execute multiple exposures at an arbitrary timing during a single shooting. The sensor includes a number of photoelectron storage units in each pixel, and the units where the photoelectrons generated by each exposure are stored can be freely selected. Since an image can be acquired for a single storage unit, and the lock-in pixel image sensor has a number of storage units, the lock-in pixel image sensor can acquire multiple images in one shot. By assigning a specific exposure timing to each unit and synchronizing the exposure timing with the focus fluctuation of the TAG lens, it is possible to simultaneously acquire images in different focal planes. To evaluate the system, we conducted experiments to show the effectiveness of simulfocus imaging in microscope and telescope configurations. From the experimental results, it was confirmed that simulfocus was effective in both configurations.

In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~-3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation., Competing Interests: The authors declare no conflict of interest.

Multi-exposure laser speckle contrast imaging (MELSCI) systems based on high frame rate cameras are suitable for wide-field quantitative measurement of blood flow. However, high-speed camera-based MELSCI requires high power consumption, large memory, and high processing capability, which may lead to relatively large and expensive hardware. To realize a compact and cost-efficient MELSCI system, we discuss an application of the multi-tap CMOS image sensor originally designed for time-of-flight range imaging. This image sensor operated in the global shutter mode and every pixel was provided with multiple charge-storage diodes. Multiple images for different exposures were acquired simultaneously because exposure patterns were programmable to implement an arbitrary exposure duration for each tap. The frame rate was close to video frame rates (30 frames per second (fps)) regardless of the exposure pattern. The feasibility of the proposed method was verified by simulations that were performed with real speckle images captured by a high-speed camera at 40 kfps. Experiments with a four-tap CMOS image sensor demonstrated that a flow speed map was obtained at a moderate frame rate such as 35 fps for a moving ground glass plate and 45 fps for flowing Intralipose, which were linearly moved at speeds of 1-5 mm/s.

We propose a plasmonic color filter consisting of a single aperture surrounded by concentric periodic corrugations for simultaneous imaging of a spectral range from the visible to the near-infrared. The incident light coupled with surface plasmons propagates through the sub-wavelength aperture as beaming light. The beaming light transmission is able to suppress the spatial color cross-talk between the pixels in an image sensor. We analyzed the transmission characteristics of a plasmonic color filter with periodic corrugations in a silver thin film by using the finite-difference time-domain algorithm. We demonstrated a multi-band transmission wavelength selectivity, of about 100 nm, for the spectral bandwidth ranging from visible to near-infrared. The simultaneous discrimination of visible and near-infrared light with a high color purity by the plasmonic color filter achieves both improved image recognition and smaller system-size compared with conventional systems, which is particularly important for applications such as vehicle-mounted cameras, security, and biological tissue engineering.

A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise. Although semi-photon-counting-level (SPCL) ultra-low noise complementary-metal-oxide-semiconductor (CMOS) image sensors (CISs) with high conversion gain pixels have emerged, they still suffer from huge RTS noise, which is inherent to the CISs. The proposed method utilizes a multi-aperture (MA) camera that is composed of multiple sets of an SPCL CIS and a moderately fast and compact imaging lens to emulate a very fast single lens. Due to the redundancy of the MA camera, the RTS noise is removed by the maximum likelihood estimation where noise characteristics are modeled by the probability density distribution. In the proposed method, the photon shot noise is also relatively reduced because of the averaging effect, where the pixel values of all the multiple apertures are considered. An extremely low-light condition that the maximum number of electrons per aperture was the only 2 e - was simulated. PSNRs of a test image for simple averaging, selective averaging (our previous method), and the proposed method were 11.92 dB, 11.61 dB, and 13.14 dB, respectively. The selective averaging, which can remove RTS noise, was worse than the simple averaging because it ignores the pixels with RTS noise and photon shot noise was less improved. The simulation results showed that the proposed method provided the best noise reduction performance., Competing Interests: The authors declare no conflict of interest.

The photometric stereo method enables estimation of surface normals from images that have been captured using different but known lighting directions. The classical photometric stereo method requires at least three images to determine the normals in a given scene. However, this method cannot be applied to dynamic scenes because it is assumed that the scene remains static while the required images are captured. In this work, we present a dynamic photometric stereo method for estimation of the surface normals in a dynamic scene. We use a multi-tap complementary metal-oxide-semiconductor (CMOS) image sensor to capture the input images required for the proposed photometric stereo method. This image sensor can divide the electrons from the photodiode from a single pixel into the different taps of the exposures and can thus capture multiple images under different lighting conditions with almost identical timing. We implemented a camera lighting system and created a software application to enable estimation of the normal map in real time. We also evaluated the accuracy of the estimated surface normals and demonstrated that our proposed method can estimate the surface normals of dynamic scenes., Competing Interests: The authors declare no conflict of interest.

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV., Competing Interests: The authors declare no conflict of interest.

A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.2e-rms at 20 fps with true correlated double sampling operation and fast intrinsic response less than 500 ps at 635 nm. The proposed imager has an effective pixel array of and a pixel size of . The sensor chip is fabricated by Dongbu HiTek 1P4M 0.11 CIS process.

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

This paper presents an indirect time-of-flight (TOF) measurement technique with an impulse photocurrent response of a lock-in pixel. By using a short-pulse laser, the generated photocurrent can be presumed to be an impulse response. This facilitates the utilization of the full high-speed performance of the photodetector and gives high range resolution. As a proof-of-concept, a test chip with a lock-in pixel based on draining-only modulation was implemented using 0.11 μm CMOS image-sensor technology. The test chip achieved a range resolution of 0.29 mm in a 50-mm measurable range, which corresponds to a time resolution of 1.9 ps and the successful acquisition of a 3-mm example step.

Multi-beam confocal microscopy without any physical pinhole was demonstrated. As a key device, a custom CMOS image sensor realizing a focal-plane pinhole array effect by special pixel addressing and discarding of the unwanted photocarriers was developed. The axial resolution in the confocal mode measured by FWHM for a planar mirror was 8.9 μm, which showed that the confocality has been achieved with the proposed CMOS image sensor.

A CMOS light pulse receiver (LPR) cell for spatial optical communications is designed and evaluated by device simulations and a prototype chip implementation. The LPR cell consists of a pinned photodiode and four transistors. It works under sub-threshold region of a MOS transistor and the source terminal voltage which responds to the logarithm of the photo current are read out with a source follower circuit. For finding the position of the light spot on the focal plane, an image pixel array is embedded on the same plane of the LPR cell array. A prototype chip with 640 × 240 image pixels and 640 × 240 LPR cells is implemented with 0.18 μm CMOS technology. A proposed model of the transient response of the LPR cell agrees with the result of the device simulations and measurements. Both imaging at 60 fps and optical communication at the carrier frequency of 1 MHz are successfully performed. The measured signal amplitude and the calculation results of photocurrents show that the spatial optical communication up to 100 m is feasible using a 10 × 10 LED array.

For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e(-) for the simple integration CMS and 75 dB and 2.2 e(-) for the folding integration CMS, respectively, are obtained.

The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respect to the incident light. In this paper, an analysis of the non-linearity in partial charge transfer technique has been carried, and the relationship between dynamic range and the non-linearity is studied. The results show that the non-linearity is caused by two factors, namely the current diffusion, which has an exponential relation with the potential barrier, and the initial condition of photodiodes in which it shows that the error in the high illumination region increases as the ratio of the long to the short accumulation time raises. Moreover, the increment of the saturation level of photodiodes also increases the error in the high illumination region.

A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the sensitivity control with separation gate techniques is simulated and it is found that a blocking layer to the storage diode plays an important role for high controllability of sensitivity of the storage diode. A prototype chip for testing multiple short time accumulations is fabricated and measured.