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401. On the Relation Between the Input Power, The Efficiency and the Tip Clearance of Centrifugal Blowers

402. OCCURRENCE OF LIGAND COUPLING IN THE REACTIONS OF VARIOUS SULFOXIDES WITH GRIGNARD REAGENTS

403. Secondary flow due to the tip clearance at the exit of centrifugal impellers

404. Studies on Combustion, Vibration, and Noise in High-Speed Diesel Engines Through Newly Developed Measuring Instruments

405. Medroxyprogesterone acetate enhances spontaneous mammary tumorigenesis and uterine adenomyosis in mice

406. Study on in-cylinder flow of direct injection diesel engine by LDV measurement

407. Effects of Fuel Injection Mode on Residual Fuel Combustion in High Speed Marine Diesel Engine

408. Wall Friction and Local Heat Transfer in Oscillatory Flow : Two-dimensional Unsteady Laminar Boundary Layer on a Flat Plate

409. Turbulence measurements in a direct injection diesel engine by LDV

410. Regulation of amino acid intake in the rat: self-selection of methionine and lysine

411. Behavior of cylinder pressure in the combustion chamber of a high speed diesel engine

412. Secondary ion mass spectroscopy of TiN thin films obtained by ion beam mixing

413. Behavior of Severely Asymmetric Flow in a Vaneless Diffuser

414. On the Pressure Losses Due to the Tip Clearance of Centrifugal Blowers

416. Stage-specific quercetin sulfation in the gut of Mythimna separata larvae (Lepidoptera: Noctuidae).

417. Chemical impedance of TiN thin films obtained by ion beam mixing

418. Characteristics of TiN thin films produced by dynamic mixing

419. Secondary Flow due to the Tip Clearance at the Exit of Centrifugal Impellers

420. Effect of Blade Tip Configuration on Tip Clearance Loss of a Centrifugal Impeller

424. SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors.

427. Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth.

428. Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures.

429. Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions.

430. Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor.

431. Novel high-current density GaN-based normally off transistor with tensile-strained quaternary InAlGaN barrier.

432. On-site nondestructive inspection by upgraded portable 950 keV/3.95 MeV X-band linac x-ray sources.

433. GaN transistors on Si for switching and high-frequency applications.

435. Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient.

436. Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures.

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