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1,562 results on '"Disilane"'

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451. Effects of oxygen on selective silicon deposition using disilane

452. Probing the disilane adsorption kinetics: An alternative approach

453. Silylation reactions of olefins with monosilane and disilane in the presence of a transition metal complex, metal hydride, and radical initiator

454. Breakdown properties of metal/NIDOS SiO2/silicon structures

455. Polymerization of propylene by using MG(OEt)2-DNBP-TiCl4 catalyst with alkoxy disilanes as external donor

456. Deposition of Amorphous Hydrogenated Silicon (a-Si:H): in situ Gas Analysis by Time-of-Flight Mass Spectrometry

457. Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors

458. Photolysis of Disilane at 193 nm

459. Silicon–carbon thin films deposited by excimer lamp-CVD from disilane and ethylene

460. Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates

461. Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

462. Calculation of the Thermodynamic Properties of Silane and Disilane Derivatives and Modeling of the Thermolysis Process

463. The Special Features of the Structure of Silane and Disilane Derivative Molecules

464. Photochemical Bissilylation of C60 with Disilane1

465. New Dichlorosilanes, Cyclotrisilanes, and Silacyclopropanes as Precursors of Intramolecularly Coordinated Silylenes

466. Adsorption and decomposition of 1,4-disilabutane (SiH3CH2CH2SiH3) on Si(100) 2×1 and porous silicon surfaces

467. Doping characteristics of n-type InP using phenylsilane and TBP by MOVPE

468. Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature

469. Growth of InGaAsP in a stagnation flow vertical reactor using TBP and TBA

470. Role of hydrogen inSiH2adsorption on Si(100)

471. CO 2 laser CVD of a-Si:H: in situ gas analysis and model calculations

472. In Situ Thermocouples in Macro-Components Fabricated Using SALD and SALDVI Techniques. I. Thermochemical Modeling

473. Conformational studies by dynamic NMR. 66. Ring inversion in a cyclic disilane: 1,1,4,4-tetramethyl-1,4-disilacyclohexane

474. Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy

475. Encapsulation of Silicon Nanoclusters in Zeolite Y

476. Adsorption of disilane on Si(111)-(7×7) and initial stages of CVD growth

477. Silicon isotope enrichment for low activation

478. Platinum-Catalyzed Hydrosilylation of 2,2-Divinyladamantane

479. Energetics of silicon hydrides on the Si(100)-(2×1) surface

480. Raman investigation of submicro-grained Si films obtained by incoherent UV photo-CVD of silicon hydrides

481. Reaction of a Stable Silylene with Divalent Group 14 Compounds

482. Kinetics of Silylene Insertion into N−H Bonds and the Mechanism and Kinetics of the Pyrolysis of Dimethylsilylamine

483. Formation and Chemical Selectivity of Partially Ga-Terminated Si(111) Surfaces

484. Adsorption of SiH4 or Si2H6 on P/Si(100) at room temperatures

485. Higher-order desorption kinetics of hydrogen from silane/, disilane/, and D/Si(100)

486. Nanoscale Si selective homoepitaxial growth observed by scanning tunneling microscopy

487. Growth and properties of InGaN nanoscale islands on GaN

488. Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6

489. Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials

490. Gas source homoepitaxy on Si(113) – the interrelation of H-induced reconstructions and growth morphology

491. Photoinduced Reaction of Disilane with the Si(111) Surface

492. Photochemical functionalizations of C60 with phenylpolysilanes

493. Hydrogen and disilane adsorption on low energy ion-roughened Si (100)

494. Stable Ge–H phase at 620K on Si1−xGex/Si(001) surface: a high-resolution electron energy loss spectroscopy study

495. Capas de a-SiN:H modificadas mediante la irradiación con un láser de excímero

496. Surface hydrogen and growth mechanisms of synchrotron radiation-assisted silicon gas source molecular beam epitaxy using disilane

497. Reaktionen von Bis(trimethylsilyl)amino-substituierten Chlorsilanen [(Me3Si)2N]Me2−nPhnSiCl (n=0, 1, 2) mit Lithium—Darstellung von Bis(trimethylsilyl)amino-substituierten Silyllithiumverbindungen und Disilanen

498. Effects of atomic hydrogen on growth behavior of Si films by Si2H6-source molecular beam epitaxy

499. Modelling the interaction of silane and disilane with Si{100}(2×1) using classical many-body potentials

500. Synthesis and characterization of new disilane derivatives of tungsten

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