Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6

This study employs real-time high-temperature scanning tunneling microscopy to examine the evolution of the surface atomic structure of Si(100) during homoepitaxy by chemical vapor deposition at 625 C. At the initial stage, a (2 x n) structure is gradually formed, and the growth mode is pure step flow, followed by double step flow after a single-domain surface is obtained due to faster step advance of S B than S A . As growth proceeds, areas with c(4 x 4 ) symmetry appear, grow, and eventually cover the entire surface.