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In the present study, zinc oxide (ZnO) nanorods (NRs) with a hexagonal structure have been synthesized via a hydrothermal method assisted by microwave radiation, using specialized cardboard materials as substrates. Cardboard-type substrates are cost-efficient and robust paper-based platforms that can be integrated into several opto-electronic applications for medical diagnostics, analysis and/or quality control devices. This class of substrates also enables highly-sensitive Raman molecular detection, amiable to several different operational environments and target surfaces. The structural characterization of the ZnO NR arrays has been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical measurements. The effects of the synthesis time (5-30 min) and temperature (70-130 °C) of the ZnO NR arrays decorated with silver nanoparticles (AgNPs) have been investigated in view of their application for surface-enhanced Raman scattering (SERS) molecular detection. The size and density of the ZnO NRs, as well as those of the AgNPs, are shown to play a central role in the final SERS response. A Raman enhancement factor of 7 x 105 was obtained using rhodamine 6 G (R6G) as the test analyte; a ZnO NR array was produced for only 5 min at 70 °C. This condition presents higher ZnO NR and AgNP densities, thereby increasing the total number of plasmonic "hot-spots", their volume coverage and the number of analyte molecules that are subject to enhanced sensing. [ABSTRACT FROM AUTHOR]

We report the effect of a disperse carbon interlayer between the n-a-Si:H layer and an aluminium zinc oxide (AZO) back contact on the performance of amorphous silicon solar cells. Carbon was incorporated to the AZO film as revealed by x-ray photoelectron spectroscopy and energy-dispersive x-ray analysis. Solar cells fabricated on glass substrates using AZO in the back contact performed better when a disperse carbon interlayer was present in their structure. They exhibited an initial efficiency of 11%, open-circuit voltage Voc = 1.6 V, short-circuit current JSC = 11 mA cm−2 and a filling factor of 63%, that is, a 10% increase in the JSC and 20% increase in the efficiency compared to a standard solar cell. [ABSTRACT FROM AUTHOR]

The degradation of organic pollutants in wastewaters assisted by oxide semiconductor nanostructures has been the focus of many research groups over the last decades, along with the synthesis of these nanomaterials by simple, eco-friendly, fast, and cost-effective processes. In this work, porous zinc oxide (ZnO) nanostructures were successfully synthesized via a microwave hydrothermal process. A layered zinc hydroxide carbonate (LZHC) precursor was obtained after 15 min of synthesis and submitted to different calcination temperatures to convert it into porous ZnO nanostructures. The influence of the calcination temperature (300, 500, and 700 °C) on the morphological, structural, and optical properties of the ZnO nanostructureswas investigated. All ZnO samples were tested as photocatalysts in the degradation of rhodamine B (RhB) under UV irradiation and natural sunlight. All samples showed enhanced photocatalytic activity under both light sources, with RhB being practically degraded within 60 min in both situations. The porous ZnO obtained at 700 °C showed the greatest photocatalytic activity due to its high crystallinity, with a degradation rate of 0.091 and 0.084 min−1 for UV light and sunlight, respectively. These results are a very important step towards the use of oxide semiconductors in the degradation of water pollutants mediated by natural sunlight. [ABSTRACT FROM AUTHOR]

Ultrasonic spray pyrolysis deposition of ZnO-based materials offers an attractive high-throughput low-cost route towards industrial production of high-quality transparent conductive oxide (TCO) thin-films. In this work, undoped and aluminium-doped ZnO films have been grown employing ultrasonic spray pyrolysis at relatively low-temperate (300 °C), followed by a post-annealing treatment. The role of Al concentration in the starting solution, as well as the rapid thermal annealing (RTA) atmosphere, were investigated and correlated to the morphological, structural, electrical and optical properties of the films. The remarkable enhancement of electrical conductivity attained here is mainly ascribed to the combined effects of: (1) homogenous incorporation of Al 3+ into the ZnO matrix, which enhances crystal quality providing higher electronic mobility; and (2) the RTA which releases the localized electrons caused by oxygen absorption and thereby increases the free carrier density. Under optimum deposition conditions, a low resistivity and a high optical transmittance around 4 × 10 −3 Ω cm and 87%, respectively, were obtained. The application of the RTA post-process after low temperature growth has several advantages relative to the direct growth at high temperature (usually 400–575 °C), such as shorter growth time and lower cost associated to the spray pyrolysis equipment requirements and usage. The results suggest that the electrical and optical properties of the ZnO:Al films can be further improved for solar cell applications by controlling the temperature of the post-deposition annealing in reducing atmosphere. [ABSTRACT FROM AUTHOR]

In this paper, we present the preliminary results concerning the deposition of highly transparent and conductive gallium-doped zinc oxide (GZO) deposited on transparent flexible substrate based on cellulose derivatives. Prior to the deposition of the GZO film, the surface of the polymer have been coated with a thin silicon dioxide (SiO2) layer deposited by thermal evaporation assisted by an electron gun. By doing this surface treatment, we succeeded in depositing highly conductive and transparent GZO with an electrical resistivity of 2.0×10−3 Ω cm and an average optical transmittance in the visible part of the spectrum (400–700 nm) of 70% by r.f. magnetron sputtering at room temperature. Besides the optoelectronic properties, the films are mechanically stable with a polycrystalline structure with a strong preferred (002) orientation, parallel to the substrate. [Copyright &y& Elsevier]

In this paper, we present results concerning the thickness dependence (from 70 to 890 nm) of electrical, structural, morphological and optical properties presented by gallium-doped zinc oxide (GZO) deposited on polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. For thicknesses higher than 300 nm an independent correlation between the electrical, morphological, structural and optical properties are observed. The lowest resistivity obtained was 5×10−4 Ω cm with a sheet resistance of 15 Ω/□ and an average optical transmittance in the visible part of the spectra of 80%. It is also shown that by passivating the surface of the polymer by depositing a thin silicon dioxide layer the electrical and structural properties of the films are improved nearly by a factor of two. [Copyright &y& Elsevier]

Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate–target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10−4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm−3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average. [Copyright &y& Elsevier]