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New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering
- Source :
-
Thin Solid Films . Oct2003, Vol. 442 Issue 1/2, p102. 5p. - Publication Year :
- 2003
-
Abstract
- Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate–target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10−4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm−3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average. [Copyright &y& Elsevier]
- Subjects :
- *GALLIUM
*ZINC oxide
*FILMSTRIPS
*MAGNETRONS
*SPUTTERING (Physics)
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 442
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 10863598
- Full Text :
- https://doi.org/10.1016/S0040-6090(03)00955-6