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Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi4Si3O12 (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p–6s transitions of Bi3+ ions. In addition, the Nd-doped samples had emission peaks due to the 4f–4f transitions of Nd3+ ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples. [ABSTRACT FROM AUTHOR]

Nd-doped CaWO4 single crystals with dopant concentrations of 0.1, 0.5, and 1% were synthesized by the floating zone method. The transmission, photoluminescence, and scintillation properties were evaluated from ultraviolet to near-infrared (NIR) ranges. An emission peak due to transitions of the host was observed at 400 nm, and several sharp peaks originating from Nd3+ 4f–4f transitions were confirmed at 900, 1060, and 1300 nm. The quantum yields of 0.1, 0.5, and 1% Nd-doped samples were 70.7, 79.5, and 61.2%, respectively, when monitored, and excited wavelengths were 750–1500 nm and 590 nm. Decay times consistent with typical Nd3+ transitions were obtained when NIR ranges were monitored. Additionally, the energy transfer between the host and Nd3+ occurred according to the decay measurement. The relationship between X-ray irradiated dose rate and intensity in the range of NIR was investigated by combining the crystals with an InGaAs-photodiode. The lowest detectable dose rate retaining the linearity of the present crystals was 0.3–0.06 Gy/h. [ABSTRACT FROM AUTHOR]

Photoluminescence and scintillation properties of RbI single crystals with various Tl-concentrations (0.1%, 0.3%, 1%, and 3%) were investigated. Under an excitation at ~ 300 nm, all the samples exhibit an emission peak at ~ 420 nm. This emission peak is due to 3P1→1S0 transitions of Tl+ ions. Under X-ray excitation, all the samples exhibit a broad peak (~ 420 nm) and a shoulder like structure (~ 500 nm) due to Tl+ ions. According to pulse height spectra under 137Cs γ-ray irradiation, the 0.3% Tl-doped sample shows the highest light yield of 7300 ph/MeV among the samples. [ABSTRACT FROM AUTHOR]

Ce differently (0, 0.01, 0.1, 1, 2 and 5% with respect to Mg) doped LiMgAlF 6 ceramics were synthesized by the spark plasma sintering (SPS) method. In photoluminescence (PL), emission bands appeared at 300 nm with 30 ns day time, and these emission properties were almost the same in scintillation under X-ray irradiation. Further, thermally stimulated luminescence (TSL) was observed after X-ray irradiation, and the primary glow peak temperature was 160 °C with a lower detection limit of ∼10 mGy. • Ce-doped LiMgAlF 6 ceramics were prepared by the spark plasma sintering method. • Photoluminesence and scintillation properties were investigated. • Thermally stimulated luminescence properties were evaluated. [ABSTRACT FROM AUTHOR]

Sm-doped SrCl2 crystals were prepared, and the scintillation properties such as emission spectra, decay profiles, and pulse height were investigated. Under X-ray irradiation, a broad band can be observed at 680 nm, which indicates that the major origin is due to 5d-4f transitions of Sm2+. The decay curve is approximated by one exponential function with a decay time of 10 μs, and the decay time constant is typical for Sm2+. From the pulse height of 137Cs γ-rays, 0.1% Sm:SrCl2 shows a light yield of 33,000 photons/MeV. [ABSTRACT FROM AUTHOR]

We synthesized the Nd-doped Bi4Ge3O12 (BGO) single crystals with different concentrations of Nd (0.1, 0.5, and 1%) by the floating zone method and evaluated the photoluminescence (PL) and scintillation properties. In both the PL and scintillation spectra, intrinsic luminescence of BGO was observed at 400–600 nm. In addition, emission peaks due to the 4f–4f transitions of Nd3+ were observed in the near-infrared range. The 0.5% Nd-doped sample indicated the highest quantum yield of 42.9% among the samples. All the samples showed good linearity between X-ray exposure dose rate and the emission intensity in the NIR range. The lowest detectable dose rates were 0.06 Gy/h in the 0.1 and 1% Nd-doped BGO samples, and that of the 0.5% Nd-doped BGO sample was 0.01 Gy/h. [ABSTRACT FROM AUTHOR]

In this study, the effect of Al-doping on dosimetric properties of CaF 2 was investigated. Al-doped CaF 2 showed a radiophotoluminescence (RPL) peak at 750 nm after X-ray irradiation. The RPL intensity decreased with the increase of Al concentration and was less than that of undoped CaF 2. The minimum detectable dose as the RPL dosimeter of 0.01% Al-doped CaF 2 was 42 mGy. Al-doped CaF 2 also indicated thermally stimulated luminescence (TSL) glow peaks at 225, 285, 387, and 436 °C. The wavelengths of TSL were 390 and 500 nm. The minimum detectable dose as the TSL dosimeter of 1% Al-doped CaF 2 turned out to be 0.43 μGy which is comparable to commercial dosimeters. [ABSTRACT FROM AUTHOR]

We have synthesized Dy-doped LiCaPO 4 samples by the conventional solid-state reaction and evaluated photoluminescence (PL), scintillation, and dosimetric properties. The samples showed luminescence which was attributed to the 4f-4f transitions of Dy3+ by irradiation of UV and X-ray. The highest PL quantum yield (QY) of 59.2% was obtained from the 0.5% Dy-doped sample. The 0.5% Dy-doped sample exhibit the highest intensity in scintillation and thermally stimulated luminescence (TSL) as well. In TSL dose response function, the 0.5% Dy-doped LiCaPO 4 showed the proportional relationship from 0.01 to 30 mGy under X-ray irradiation. The TSL intensity surpassed the commercial product. [ABSTRACT FROM AUTHOR]

A system for deformation experiments under high pressure using a deformation cubic apparatus, with monochromatic synchrotron radiation, has been developed at beamline AR-NE7A, Photon Factory, KEK High Energy Accelerator Research Organization, Japan. We have conducted deformation experiments of fayalite using this new system at pressures up to 5 GPa and temperatures up to 1073 K, and successfully conducted the stress and strain measurements during the deformation. [ABSTRACT FROM AUTHOR]

Presents a study which applied Stokes' viscometry combined with X-ray radiographic observation using multi-anvil press and synchroton radiation to the viscosity measurement of a type of melts. Results; Discussion.

We synthesized BaO-Bi 2 O 3 -P 2 O 5 glass samples with different Nd concentrations by the melt-quenching technique. The concentrations were 1.0, 5.0, 10, 15, and 20 %. We obtained transparent and homogeneous samples for 1.0–10 % Nd concentrations. The 15 % Nd-doped sample was inhomogeneous, and the 20 % Nd-doped sample contained a crystalline phase. The photoluminescence (PL) and scintillation properties of the 1.0–10 % Nd-doped samples were investigated. The samples showed PL and scintillation peaks in the near-infrared region, which were due to 4f–4f transitions of Nd3+. We tested the X-ray dose rate response functions of the samples. The 10 % Nd-doped samples showed the most intensive response among the examined samples, and the lower detection limit of dose rate was 0.06 Gy/h with our setup. [ABSTRACT FROM AUTHOR]

We prepared Nd-doped CaYAl 3 O 7 single crystals with different Nd concentrations of 0.1, 0.5, 1.0, 5.0, 10, and 20% by the floating zone method. Photoluminescence (PL) and scintillation properties of all the samples were investigated, and the performance as near-infrared (NIR) scintillators was evaluated. All the samples exhibited some luminescence peaks of 4f-4f transitions of Nd3+ in PL and scintillation spectra at around 890, 1060, and 1300 nm. The 5.0% Nd-doped sample showed the highest PL quantum yield of 49.5%. In addition, the 5.0% Nd-doped sample had the highest scintillation intensity under X-ray irradiation among the samples, and the lowest detectable dose rate was 0.001 Gy/h. • We prepared Nd-doped CaYAl 3 O 7 single crystals with different Nd concentrations of (0.1, 0.5, 1.0, 5.0, 10, and 20%) by the FZ method. • All the samples showed the luminescence of 4f-4f transitions of Nd3+ at around 890, 1060, and 1300 nm in photoluminescence and scintillation. • The 5.0% Nd-doped sample had the lower detection limit of dose rate of 1 mGy/h. [ABSTRACT FROM AUTHOR]

• We synthesized the non-doped CaF 2 ceramic using the SPS method. • We discovered that the CaF 2 ceramic showed RPL phenomenon. • The X-ray irradiated CaF 2 showed the emissions peaking at 660 and 760 nm. • The former and latter emissions are due to F 2 + and (F 2 +) A center respectively. We discovered that a CaF 2 ceramic showed a radio-photoluminescence (RPL) phenomenon by X-ray irradiation. The RPL observed in the non-doped CaF 2 ceramic as a generation of photoluminescence (PL) emission bands peaking at 660 nm under excitations at 370 and 560 nm, and 760 nm under excitations at 390 and 610 nm. The emission bands at 660 and 760 nm are due to F 2 + and (F 2 +) A centers, respectively. [ABSTRACT FROM AUTHOR]

Different concentrations of Eu doped LiMgAlF 6 samples were synthesized by the spark plasma sintering (SPS) method. In photoluminescence (PL) measurements, emission due to 5d-4f transition of Eu2+ was observed at 370 nm, and PL decay times resulted 1.1–2.8 μs. When we irradiated X-rays, scintillation emissions due to Eu2+ and Eu3+ were detected at 370 and 600 nm, respectively. Optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were also observed in Eu-doped LiMgAlF 6 , and especially, TSL intensity was very high. • We prepared Eu-doped LiMgAlF 6 ceramic by the spark plasma sintering method. • Photoluminescence and scintillation properties were investigated. • Optically and themelly stimulated luminescence properties were evaluated. [ABSTRACT FROM AUTHOR]

Scintillation and photoluminescence (PL) properties of undoped and Ce-doped Ca 3 Sc 2 Si 3 O 12 (CSSG) single crystals were investigated. The crystal samples were synthesized by the floating zone (FZ) method. The Ce-doped CSSG samples showed PL spectrum with a broad feature peaking around 510 nm. From decay constants of the corresponding PL emission, it was confirmed that the origin was due to the 5d-4f transitions of Ce 3 + ions. In addition, the Ce-doped CSSG samples showed scintillation induced by X-rays with a spectrum, peaking around 510 nm as similarly seen in PL. All the samples exhibited a photoabsorption peak in the pulse height spectra measured under 241Am γ -ray irradiation. The absolute scintillation light yield (LY) was the highest for the 0.1% Ce-doped CSSG sample, and the value was 3,300 ph/MeV. [ABSTRACT FROM AUTHOR]

We have developed Eu-doped Cs(Cl x , Br 1- x) (x = 0, 0.25, 0.5, 0.75, 1) translucent ceramics by the spark plasma sintering technique and evaluated their optical and optically-stimulated luminescence (OSL) properties. As the optical properties, the transmittances of all the samples were 20–60% in the visible range, and the absorption bands around 260 and 350 nm due to 4f-5d transitions of Eu2+ were confirmed. After X-ray irradiation, all the samples showed the new absorption band around 600–700 nm. When increasing x , the generated absorption peak position shifted to shorter wavelength. Regarding the OSL properties, all the samples showed a broad OSL emission peak around 440 nm, and the origin was 5d-4f transitions of Eu2+. The peak positions of the OSL stimulation spectra shifted to shorter wavelength with increasing x. The dose sensitivities using OSL were confirmed to be as low as 0.01 mGy in all the samples. • We have developed Eu-doped Cs(Cl x , Br 1- x) translucent ceramics by the spark plasma sintering technique. • After X-ray irradiation, the new absorption band around 600–700 nm was confirmed in all the samples. • The peak position of OSL stimulation spectra can be controlled by changing x in the Eu-doped Cs(Cl x , Br 1- x) samples. • As the OSL dose response functions, all the samples showed a good linearity from 0.01 to 1000 mGy. [ABSTRACT FROM AUTHOR]

(C 6 H 5 C 2 H 4 NH 3) 2 Pb 1- x Ca x Br 4 (x = 0.05, 0.1, and 0.25) crystals were grown by the solvent diffusion method and evaluated for the photoluminescence and scintillation properties. When irradiated by X-rays, emission peaking at 440 nm due to exciton emission was observed. The pulse height spectra of (C 6 H 5 C 2 H 4 NH 3) 2 Pb 1- x Ca x Br 4 under 137Cs γ-ray irradiation demonstrate that the light yields were 20,000, 17,000, and 16,000 ph/MeV in x = 0.05, 0.1, and 0.25 samples, respectively. Ca-substitution significantly enhances the photoluminescence quantum yield and scintillation light yield. • (C 6 H 5 C 2 H 4 NH 3) 2 (Pb,Ca)Br 4 crystals were evaluated for the photoluminescence and scintillation properties. • (C 6 H 5 C 2 H 4 NH 3) 2 (Pb,Ca)Br 4 crystals exhibit a sharp emission peaking at 440 nm due to exciton luminescence. • Pulse height spectra under 137Cs γ-rays demonstrate the light yields was 20,000 ph/MeV. • Ca-substitution enhances both the photoluminescence and scintillation properties. [ABSTRACT FROM AUTHOR]

In this study, we have synthesized x CeF 3 -(30- x)BaF 2 -20Al 2 O 3 -50B 2 O 3 (x = 0, 0.3, 1.0, 3.0, 5.0 and 10.0 mol%) glasses by the conventional melt-quenching method and then investigated the optical properties (transmittance spectra, photoluminescence (PL) spectra and PL decay times), scintillation properties under X-rays irradiation (scintillation spectra and scintillation decay times) and thermally-stimulated luminescence (TSL) properties (glow curves and dose response functions). The PL spectra of the Ce-doped samples consist of an intense emission band due to the 5d-4f transitions of Ce3+ ion peaking at 350–400 nm, and PL quantum yield value was 70.1%. The decay time of the latter emission slightly varied in a range of 32–36 ns depending on the Ce concentration. The Ce-doped samples have also shown strong scintillation under X-ray irradiation having a spectrum of an intense emission band. The peak position around 300–400 nm with the Ce3+ concentration, and the decay time ranged 19–44 ns. The scintillation light yield of 5.0% Ce-doped sample was the highest among the present samples, and the measured value was 1,800 ph/MeV under 137Cs γ-ray exposure. • Ce-doped oxyfluoride glasses have synthesized by the conventional melt-quenching method. • The prepared glasses showed a broad emission band around 360 nm with an excitation band around 320 nm. • The photoluminescence QY was the highest among the present samples (70.1%). • The Ce-doped samples have shown strong scintillation under X-ray irradiation having a spectrum of an intense emission band. [ABSTRACT FROM AUTHOR]

Abstract We synthesized non- and Eu-doped AlN ceramics by the spark plasma sintering (SPS) method and characterized their photoluminsecence (PL) and thermally stimutrated luminescence (TSL) properties. In the PL properties, the non-doped AlN samples showed a broad emission peaking around 400 nm. In contract, the Eu-doped AlN samples showed two broad emission bands around 400 and 520 nm, and two sharp emission peaks at 610 and 700 nm. The origins of the emission peaks at 400, 520, 610 and 700 nm were due to complexes composed of Al vacancy and O impurity, 5d-4f transitons of Eu2+, 5D 0 →7F 2 and 5D 0 →7F 4 transitions of Eu3+, respectively. Regarding the TSL properties, the TSL intensities of the 0.01 and 0.1% Eu-doped AlN samples were higher than that of the non-doped AlN sample. It was confirmed that the 0.1% Eu-doped AlN showed a good linearity from 0.01 to 1000 mGy. [ABSTRACT FROM AUTHOR]

We fabricated undoped and 0.5, 1.0, 2.0, and 3.0% Eu-doped Al 4 SiO 8 single crystals by the floating zone method and analyzed their photoluminescence (PL) and thermally stimulated luminescence (TSL) properties. In PL properties, the undoped sample exhibited an emission band at 460 nm under excitation wavelength at 260 nm. The Eu-doped samples showed an emission band at 410 nm attributed to the 5d-4f transitions of Eu2+ ions. In TSL properties, the undoped sample exhibited TSL glow peaks at 280 and 390 °C, while the Eu-doped samples showed the ones at 230 and 370 °C. The TSL spectra of the Eu-doped samples under heating at 230 °C had an emission band due to the 5d-4f transitions of Eu2+ ions. TSL dose response functions showed a lower detection limit of 10 mGy for the undoped sample, 10 μGy for the 0.5% Eu-doped sample, and 1 μGy for the 1.0, 2.0, and 3.0% Eu-doped samples. The TSL intensity of the 2.0% Eu-doped sample was approximately 72.6% after 11 days from X-ray irradiation compared to immediately after X-ray irradiation. • ・We have synthesized Eu-doped Al 4 SiO 8 single crystals by floating zone method. • ・We have characterized the photoluminescence, and dosimetric properties. • ・The undoped sample exhibited TSL glow peaks at 280 and 390 °C, while the Eu-doped samples showed the ones at 230 and 370 °C. • ・TSL dose response functions showed a lower detection limit of 10 mGy for the undoped sample, 10 μGy for the 0.5% Eu-doped sample, and 1 μGy for the 1.0, 2.0, and 3.0% Eu-doped samples. [ABSTRACT FROM AUTHOR]

Tl-doped (0.1, 0.3, 1, and 3%) KI single crystals were synthesized, and photoluminescence and scintillation characteristics of KI:Tl were evaluated. An emission peak at ∼420 nm was observed under ∼300 nm excitation in all the samples. All the synthesized samples exhibited a peak at 420–440 nm and a tail emission at ∼350 nm under X-ray irradiation. These origins would be 3P 1 →1S 0 transitions of Tl+ (420–440 nm) and the off-center configuration of the self-trapped excitons (∼350 nm), respectively. According to pulse height spectra under γ-ray irradiation, scintillation light yield (LY) and the energy response were investigated. The 0.3% KI:Tl showed the highest LY of 7,300 photons/MeV among the prepared samples and ∼11% energy resolution under 137Cs γ-ray (662 keV) irradiation. The energy response of the 0.3% KI:Tl illustrated a good linearity against γ-ray energies from 22 to 1,408 keV. • Tl-doped KI single crystals were grown by the vertical Bridgman-Stockbarger method. • A broad emission band due to Tl+ and the self-trapped excitons were observed at ∼420 nm. • The 0.3% KI:Tl shows the scintillation light yield of 7300 photons/MeV. • The sample shows proportional response in the dynamic range from 22 to 1408 keV. [ABSTRACT FROM AUTHOR]

We discovered and reported that 0.01, 0.1 and 1% Ag-doped CsCl transparent ceramics by spark plasma sintering technique showed radiophotoluminescence (RPL). All the samples showed high transmittance (50–70%) in the visible range. Under 340 nm ± 40 nm excitation, the PL emission was observed around 450 nm before X-ray irradiation while PL emission peaks appeared around 450 and 610 nm after X-ray irradiation. Judged from excitation and emission spectra and lifetimes, the origins of emission bands around 450 and 610 nm would be Ag0/Ag 2 + and Ag2+ centers, respectively. The RPL signal was confirmed to be stable over 3 min under an excitation of 340 nm ± 40 nm. Among the synthesized samples, the lowest detectable sensitivity for the 1% Ag-doped CsCl samples was 3 mGy for the emission range of 400–550 nm. • Radio-photoluminescence phenomenon was observed in Ag-doped CsCl transparent ceramics by spark plasma sintering technique. • After X-ray irradiation, the synthesized ceramics obtained two emission peaks around 450 and 610 nm possibly associated with Ag0/Ag 2 + and Ag2+, respectively. • In the dose response functions, the lowest detectable sensitivity for the 1% Ag-doped CsCl ceramics was 3 mGy. [ABSTRACT FROM AUTHOR]

Undoped and Eu-doped CaZrO 3 crystals were synthesized by the xenon lamp floating zone method, and photoluminescence (PL) and scintillation properties were investigated. The undoped CaZrO 3 exhibited a broad PL spectrum peaking at around 410 nm while the Eu-doped CaZrO 3 showed some sharp emission lines due to 4f-4f transition of Eu3+. The PL decay time constant of the undoped CaZrO 3 was 77.8 ns while the Eu-doped CaZrO 3 showed a typical value of 4f-4f transition of Eu3+. In X-ray induced scintillation spectra, undoped CaZrO 3 showed a broad emission at 480 nm, and Eu-doped ones exhibited some emission lines at around 600 nm. The afterglow levels of the Eu-doped CaZrO 3 were lower than that of the undoped one. • Undoped and Eu-doped CaZrO 3 crystals were synthesized by the xenon lamp floating zone method. • Photoluminescence and scintillation properties of CaZrO 3 were investigated. • In X-ray induced scintillation spectra, undoped CaZrO 3 showed a broad emission at 480 nm. • Eu-doped CaZrO 3 exhibited some emission lines at around 600 nm due to 4f–4f transitions of Eu3+ ions. [ABSTRACT FROM AUTHOR]

(C 6 H 5 C 2 H 4 NH 3) 2 Pb 1 − x Sr x Br 4 (x = 0. 1 , 0.25 and 0.5) single crystals were grown by the poor-solvent diffusion method to evaluate their scintillation properties. When X-rays were irradiated upon the sample, the solids demonstrated scintillation with a spectrum of band peaking around 430 nm due to exciton emission from the inorganic layer. The pulse height spectra under 137Cs gamma-rays irradiation were measured by using (C 6 H 5 C 2 H 4 NH 3) 2 Pb 1 − x Sr x Br 4 (x = 0. 1 and 0.25) crystals, and the estimated scintillation light yields were 19,700 and 18,500 ph/MeV for x = 0. 1 and 0.25 samples, respectively. [ABSTRACT FROM AUTHOR]

Pr-doped CaWO 4 single crystals with dopant concentrations of 0.05–1% were synthesized by the floating zone method, and the photoluminescence and scintillation properties were evaluated. Emissions due to the 4f–4f transitions of Pr3+ were observed in visible–near-infrared ranges under visible light and X-ray irradiation. The X-ray-induced scintillation decay times were typical values of the transitions of Pr3+ when monitored at 380–900 nm. The afterglow levels when 20 ms passed after X-ray irradiation were calculated to be 573–730 ppm and increased as the dopant concentrations increased. In the integration-type scintillation detector property, 0.05, 0.1, and 0.5% Pr-doped samples showed good linearity between X-ray exposure dose rate and scintillation signals from 0.05 to 5 Gy/h. • Emissions due to 4f–4f transitions of Pr3+ appeared at visible–NIR ranges under visible light and X-ray irradiation. • The scintillation decay times were typical values of the transitions of Pr3+ when monitored at 380–900 nm. • Pr-doped CaWO 4 showed good linearity between X-ray exposure dose rate and scintillation signals. [ABSTRACT FROM AUTHOR]

Tb-doped SiO 2 glasses were synthesized by the spark plasma sintering (SPS) method, and optical and thermally stimulated luminescence (TSL) properties were investigated. The diffuse transmittance spectra of the 0.01, 0.05, and 0.1% Tb-doped SiO 2 samples included the absorption due to the 4f-5d transitions of Tb3+ ions. In photoluminescence properties, all the Tb-doped SiO 2 samples showed several emission peaks due to the 4f-4f transitions of Tb3+ ions and oxygen deficiency vacancy (ODC). The TSL glow curves indicated the glow peak at 140 °C, and only the emission peaks attributed to the 4f-4f transition of Tb3+ ions were observed in TSL spectra of the 0.01, 0.05, and 0.1% Tb-doped SiO 2 samples. The integrated TSL intensity of the 0.1% Tb-doped samples had a proportional relationship in the range of 0.01–1000 mGy. The TSL intensity of the 0.05% Tb-doped glass after 72 h from X-ray irradiation was about 69% with respect to the one immediately after X-ray irradiation. In addition, the 0.05% Tb-doped SiO 2 glass could use the multiple time for TSL dosimetry. • We have synthesized Tb-doped SiO 2 glasses by spark plasma sintering method. • We have characterized the photoluminescence and dosimetric properties. • Tb-doped SiO 2 samples showed luminescence properties due to the 4f-4f transitions of Tb3+. • 0.1% Tb-doped sample showed the highest TSL intensity among the samples. [ABSTRACT FROM AUTHOR]

Optical, scintillation, and dosimetric properties of the undoped and Tb-doped CaYAlO 4 single crystals grown by the floating zone method were evaluated. Several photoluminescence (PL) emission peaks due to the 4f–4f transitions of Tb3+ ion were observed at 385–620 nm under excitation at 250 nm in Tb-doped CaYAlO 4 samples. Under X-ray irradiation, scintillation peaks of the Tb-doped CaYAlO 4 crystals were consistent with the PL emission peaks. In terms of a dosimetric property, the 0.1% Tb-doped crystal exhibited the highest thermally stimulated luminescence intensity and the widest linear responses in the range of 0.01–1000 mGy among the samples. • The undoped and Tb-doped CaYAlO 4 single crystals were synthesized by the floating zone method. • The Tb-doped samples exhibited luminescence due to the 4f-4f transitions of Tb3+. • The 0.1% Tb-doped crystal exhibited the widest linear responses in the range of 0.01–1000 mGy among the samples in TSL. [ABSTRACT FROM AUTHOR]

Lutetium pyrosilicate (Lu 2 Si 2 O 7) single crystals were synthesized by using the floating-zone method with 0.1, 0.5, 1.0, 2.0 and 5.0% of Tm-doping concentration. After the phase confirmation by powder XRD, photoluminescence (PL) and scintillation properties were systematically measured, including PL emission map, PL decay time, scintillation spectra, scintillation decay time and pulse height spectra. When we irradiated X-rays, we observed the scintillation emission at 360 and 460 nm caused by Tm3+ 4f-4f transitions. Under 662 keV γ-ray irradiation, we determined absolute scintillation light yield of 2340 ph/MeV for the 2.0% Tm doped sample. Taking into account whole optical and scintillation properties, 2.0% doping was the best for Tm-doped LPS crystals. • We successfully synthesized LPS single crystals with Tm doping concentration of 0.1 to 5.0 % by the FZ method. • When we irradiated X-rays, we observed the scintillation emission at 360 and 460 nm caused by Tm3+ 4f-4f transitions. • Under 662 keV γ-ray, scintillation light yield of Tm doped LPS reached up to 2340 ph/MeV with the 2.0 % Tm doped sample. • The optimal Tm doping concentration in the LPS single crystal for a scintillator was determined to be around 2.0 %. [ABSTRACT FROM AUTHOR]

This paper presents the results of photoluminescence and X-ray induced scintillation properties of x Ce:33.3BaO-66.6SiO 2 (x = 0, 0.05, 0.1, 0.5, 1.0, 2.0) glasses produced by the Floating Zone (FZ) method. We observed intense emission from 5d–4f transition of Ce3+ and the concentration quenching with the increase of Ce concentration in photoluminescence (PL) and scintillation properties. The lowest Ce-doped sample indicated the highest scintillation intensity in the X-ray induced scintillation measurement. The non-doped sample had the highest afterglow level, and the afterglow levels decreased with Ce addition amount. From these results, it was found to be in a trade-off relationship between the scintillation intensity the and afterglow characteristics in present samples. • Succeeded in making Ce-doped BaO–SiO 2 glass using Floating Zone furnace. • The lowest Ce-doped glass shown the highest scintillation intensity among our samples. • We found that it is effective to introduce more Ce to reduce afterglow levels in this glass compositions. [ABSTRACT FROM AUTHOR]