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1. Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-\mum Wavelength.

Author

Sato, Noriaki, Shirao, Mizuki, Sato, Takashi, Yukinari, Masashi, Nishiyama, Nobuhiko, Amemiya, Tomohiro, and Arai, Shigehisa

Abstract

Room-temperature continuous-wave operation of a 1.3-\mum npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain \beta of 0.02. [ABSTRACT FROM PUBLISHER]

Published
2013
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