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Enhanced magnetoelectric effects in two-dimensional multiferroics promise greater interests for fundamental understanding and for device applications. To ameliorate properties and multifunctionality of magnetoelectric materials, highly ordered multiferroic thin films ought to be optimally designed with a high surface area and with a minimum contact area between the substrate and the films. Fabrication of hierarchically ordered, hemispherical close-packed free-standing multiferroic thin film structures of CoFe2O4 (CFO)/Pb(Zr0.52Ti0.48)O3 (PZT)/La0.6Sr0.4MnO3 (LSMO)/LaNiO3 (LNO) on a Pt/Ti/SiO2/Si substrate using a RF magnetron sputtering technique is reported here. The hemispherical space inside the shell structures, inherited from the spherical polymer, are shown by the cross-sectional scanning transmission electron microscopy. Importantly, the observed enhancement of remanent polarization is elucidated based on the facts, like the generation of a high level of compressive stress, a large thermal expansion coefficient of LSMO, and a minimal lattice mismatch with the PZT thin film. [ABSTRACT FROM AUTHOR]

With their promising enhanced magnetoelectric (ME) effects and multifunctional properties, 2D ME materials are garnering considerable research interest. However, experimental studies regarding ME effects are sparse. In order to enhance ME properties, it may be important to develop a strategy to prepare ordered ME thin film materials on suitable substrates. Materials ought to possess high surface area and less area of contact with the substrate. We investigate ME thin films consisting of CoFe2O4 (CFO)/Pb(Zr0.52Ti0.48)O3 (PZT)/LaNiO3·(LNO) on a Pt/Ti/SiO2/Si substrate that were prepared using a radio-frequency magnetron sputtering technique. The method helps to relax the in-plane constraint force and enhances the coexistence of the ferromagnetic and ferroelectric phases at the interface of the materials. Interestingly, the freestanding hemispherical ME thin films exhibited huge changes in magnetic field-induced polarization. Compared with planar CFO/PZT thin films of similar dimensions, the measured polarization was more than twice as large in the freestanding hemispherical ME thin films. This facile physicochemical technique for preparing highly efficient, hierarchically ordered micro/nano-magnetoelectric thin films may be used for the fabrication of miniaturized devices. [ABSTRACT FROM AUTHOR]

TiO2 thin films with a periodical two-dimensional close-packed hemispherical structure were prepared on Si substrates using pulsed laser deposition and close-packed monolayer polystyrene colloidal crystals as a template. Compared with conventional methods, which use a top-down approach, this route supports low-cost production of a periodic structure. Additionally, it is applicable to various ceramics for use in applications related to photonic crystals, surface self-cleaning materials, data storage media, bioassays, and so on. [ABSTRACT FROM AUTHOR]

Thin films composed of MgAl2O4 and (Ni0.5Zn0.5)Fe2O4 ([MA(100-x)-NZFx] films) were grown on fused SiO2 substrates by pulsed laser deposition. X-ray diffraction measurements revealed that the films were polycrystalline, and that their lattice constant varied linearly with composition, indicating the formation of a solid solution. The film with x = 60 was paramagnetic and those with x > 70 were ferromagnetic. The films had a transparency above 75% in the visible range, but the transparency decreased with the x value. The optical band gaps were 2.95, 2.55, 2.30 and 1.89 eV for x = 20, 40, 60, 80 and 100, respectively. The Faraday rotation angle increased with x in the visible range, and the film with x = 70 exhibited a value of 2000 degrees cm-1 at 570 nm, which is comparable to the rotation angle of Y3Fe5O12. Owing to their high transparency, which extends into the visible range, the [MA(100-x)-NZFx] films can be used in novel magneto-optical devices. [ABSTRACT FROM AUTHOR]

Abstract: This study investigated local electrical and optical properties of Pb(Mg0.39Nb0.61)–0.34mol%PbTiO3 solid solution (PMN–PT) film stacked on Si (001) wafer with (La,Sr)CoO3−x /CeO2/YSZ buffer layers. TEM-VEELS analysis of the PMN–PT thin film, which was grown epitaxially on the Si substrate with two coexisting phases of pseudocubic and tetragonal morphology, was firstly conducted using the TEM-VEELS method. The ELF has shown a bulk plasmon peak and two interband plasmon peaks. The interband transition has been interpreted in comparison with the joint density of state obtained from the measured dielectric function and the density of state calculated by the density functional theory. The interband transition from the O 2p band to Nb 4d/Ti 3d bands determines the optical properties around the band gap. The optical absorption of PMN–PT film has shown the band gap of 3.5±0.2V. The refractive index derived from the TEM-VEELS analysis in the nano-region of the film has agreed with that obtained with the conventional optical measurement from the macroscopic region. [Copyright &y& Elsevier]

(001) oriented epitaxial Pt bottom electrode was prepared on Si(001) substrate using four fold buffer layer of ST/LSCO/CeO2/YSZ. On the epitaxial Pt bottom electrode, we found that both epitaxial and polycrystalline BST thin film can be prepared by the change of oxygen gas flow procedure during heating up to deposition temperature of BST. Without oxygen gas flow on the heating process of the Pt bottom electrode, BST thin film was changed into polycrystalline, on the other hand, when the Pt bottom electrode was heated in 100 mTorr of oxygen pressure, epitaxial grown BST thin film was realized. This means that the orientation of BST thin film can be controlled by the oxygen flow procedure during heating of the Pt bottom electrode. Dielectric constant and tunability of epitaxial BST thin film changed with the oxygen pressure during heating and deposition of BST thin film. This suggests that oxygen pressure during heating and deposition is the key to control the orientation and properties of BST thin film. [ABSTRACT FROM AUTHOR]

This paper focuses on the effect of back-etching on the electrical properties in (001)&(100) oriented Pb(Zr0.3Ti0.7)O3 (PZT30) thin films. The PZT30 thin films were deposited by chemical solution deposition (CSD) on a Pt/Ti/SiO2/Si substrate with different back-etching depth. The back-etching depth was controlled by changing the etching time in the range from 287 μ m to 98 μ m (residual Si thickness; TSi = 13-202 μ m). The residual stress in PZT30 thin film was estimated at the back etched part and the un-etched part by Raman analysis. In addition, the dielectric and ferroelectric properties in PZT30 thin film were measured to estimate the effect of the back-etching depth on the electrical properties. [ABSTRACT FROM AUTHOR]

Epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) thin films with electro-optic effects were fabricated on (La0.5Sr0.5)CoO3(LSCO)/CeO2/YSZ-buffered Si(001) substrates using double-pulse excitation pulsed laser deposition (PLD) method with a mask placed between the target and the substrate. Epitaxial growth of PMN-PT thin films was undertaken using the two-step growth method of PMN-PT film. The PMN-PT seed layer was deposited at 500° C on the LSCO/CeO2/YSZ/Si, which temperature was the same as that used for LSCO de- position. The PMN-PT thin films were deposited on the PMN-PT seed layer at 600°C, which enables growth of high-crystallinity PMN-PT films with smooth surfaces. We obtained optimum fabrication conditions of PMN-PT film with micrometer-order thickness. Resultant films showed high crystallinity with full width at half maximum (FWHM) = 0.73 deg and 1.6 µm thickness. Electro-optic properties and the refractive index value were measured at 633 am wavelength using the prism coupling method. The obtained refractive index was 2.59. The electro-optic coefficients r13 and r33 were determined by applying the electrical field between a semitransparent, thin top electrode of Pt and a bottom LSCO electrode. The electro-optic coefficient was r13 = 17 pm/V at transverse electric field (TE) mode and r33 = 55 pm/V at transverse magnetic field (TM) mode. [ABSTRACT FROM AUTHOR]

We have succeeded to prepare epitaxial yttria stabilized zirconia (YSZ) thin films at room temperature (27 °C) by the use of nm thick YSZ buffer layer deposited at 800 °C on Si(0 0 1) substrate. Room temperature epitaxial growth was realized on 0.8 nm thick ultra thin YSZ buffer layer, however, to achieve high crystallinity, 6.7 nm thick was needed. On the 6.7 nm thick YSZ buffered Si(0 0 1) substrate, we have tried to prepare epitaxial oxide ceramic thin films. As the result, epitaxial CeO2, In2O3, and MnZn-ferrite thin films were successfully deposited even at room temperature. The conditions of epitaxial growth at such low temperature was considered from the point of crystal chemistry. As the result, following conditions were proposed:These proposed conditions will helpful to design epitaxial growth of oxide ceramic thin film at low temperature. [Copyright &y& Elsevier]

(Bi,La)4Ti3O12 (BLT) thin films were prepared on Pt-coated Si (Pt/Ti/SiO2/Si(100)) substrates by chemical solution deposition method. The effect of heating process on structural and electrical properties of BLT thin films was investigated. The c-axis preferentially oriented films were obtained by lower drying temperature with heating from bottom by a hot plate or IR lamp heater. On the other hand, randomly oriented films were obtained by higher drying temperature with heating from top of films by IR lamp heater or with heating substrate all around by tube type furnace. The orientation of BLT thin films deposited on Pt-coated substrates can be controlled by heating process. [ABSTRACT FROM AUTHOR]

Multi-layered epitaxial Pb(Zrx,Ti1−x)O3 (PZT) films with x=0.2–0.5 were deposited on La0.5Sr0.5CoO3−x (LSCO)/(001)STO and LSCO/CeO2/YSZ/(001)Si substrates with buffer layers. We investigated using HRTEM and XRD how the 90° domain structure and the P–E hysteresis character depend on the difference in the thermal expansion coefficient by changing the Zr/Ti composition and the substrate. XTEM analysis showed that large 90° domains 8–30 nm in width penetrate the columnar grain and the PZT layer in the PZT stacked film Zr/Ti=20/80,30/70,40/60. On the other hand, close-packed small 90° domains 4–5 nm in width were present in epitaxial columnar grains in the PZT50/50 stacked film. The P–E hysteresis loops of PZT20/80 stacked films deposited on STO and Si substrates show a remanent polarization of 2Pr=136 and 80 μC/cm2, respectively. On the other hand, those of PZT50/50 stacked films deposited on STO and Si substrates show a polarization of 2Pr=125 and 36 μC/cm2, respectively. Thus, the P–E hysteresis loop of PZT50/50 exhibits remarkable differences in 2Pr values between the substrates. [Copyright &y& Elsevier]

(Sr,Ba)Nb2O6 (SBN) thin films were deposited on epitaxial LaNiO3/CeO2/YSZ/Si(100) substrates by a pulsed laser deposition method. Epitaxial-like highly (001)-textured SBN thin films were obtained on LaNiO3/CeO2/YSZ/Si(100). Phi scans on the (311) plane revealed that the films have two in-plane orientations. The unit cell of SBN is rotated in the plane of the film by 18.6° with respect to the unit cell of the Si substrate. These results were compared with those of SBN thin films deposited on Pt/Ti/SiO2/Si substrates. [Copyright &y& Elsevier]

Heteroepitaxial yttria-stabilized zirconia (YSZ) and CeO2/YSZ thin films were prepared on Si(0 0 1) by radio frequency (RF)-magnetron sputtering using a combination of metal (Zr+Y), YSZ ceramic and CeO2 ceramic targets. Optimal crystallinity and minimal surface roughness were obtained for a 2-nm thick layer of metallic (Zr+Y). For YSZ thin film, a considerably large threshold hysteresis (memory window) of approximately 2.2 V was observed in the capacitance–voltage characteristics. It was clarified that the memory window can be suppressed by decreasing the thickness of YSZ. The memory window of CeO2(90 nm thick)/YSZ(5 nm thick) thin film was reduced to 0.4 V. [Copyright &y& Elsevier]

The stabilization effect of a very thin BaTiO3 (BT) buffer layer on a perovskite Pb(Mg1/3Nb2/3)O3 (PMN) thin film deposited on a Pt/Ti/SiO2/Si substrate was examined. If the film having stoichiometric PMN composition was deposited directly on the Pt/Ti/SiO2/Si substrate by pulsed laser deposition, the resultant phase was a single-phase pyrochlore-type compound and no perovskite-type PMN was detected. However, if a very thin BT buffer layer (more than 2.4 nm thick) was deposited on the Pt/Ti/SiO2/Si substrate, the formation of the pyrochlore-type compound was completely suppressed and the single-phase perovskite-type PMN film was stabilized. The dielectric constant and tanδ of PMN/BT thin films were measured as a function of the thicknesses of the PMN film and the BT buffer layer. It was clarified that tanδ was almost constant (approx. 5%) irrespective of the thicknesses of PMN and BT. The dielectric constant of the PMN/BT thin film exceeds 1000 if the thickness of PMN exceeds 200 nm; however, the dielectric constant decreases with decreasing thickness of PMN irrespective of the thickness of BT. [Copyright &y& Elsevier]

Band-gap energies of sol-gel-derived SrTiO[sub 3] thin films were studied in terms of annealing temperature and film thickness. The band-gap energies of highly crystallized films were comparable to those of single crystals reported, whereas for poor-crystallized films, their band-gap energy values were much larger than those of single crystals. The larger band-gap energy shift was believed to be mainly due to both quantum size effect and existence of amorphous phase in thin films. The band-gap energies also showed a strong dependence on film thickness. There was a critical film thickness (∼200 nm), above which the films had band-gap energies close to those of crystals or bulks, but below that, the values shifted largely, which can be attributed to the influence of crystallinity of thin films. Such a thickness effect of band-gap energy should be of high interest in optical device applications. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Abstract: CSD-derived ferroelectric thin films were successfully crystallized at low temperature by laser assisted annealing in this paper. Pb(Zr x Ti1−x )O3(PZT) thin films with a MPB composition (Zr/Ti=53/47) and LaNiO3 (LNO) thin film electrodes were deposited by the chemical solution deposition (CSD) method on a Si wafer. The thickness of the PZT film was about 70nm, and the thickness of the LNO film as a seeding layer and an electrode was about 200nm. The LNO precursor films were pre-annealed at 400°C for 10min, followed by final annealing at 700°C for 5min with O2 flow. The PZT precursor films were pre-annealed at temperatures ranging from room temperature to 400°C for 10min, and were annealed at the substrate temperatures ranging from room temperature to 400°C for 15min with KrF excimier laser irradiation. The energy density of laser irradiation was varied from 23 to 150mJ/cm2 by defocusing the collective lens. At 200°C and above, both the diffraction peaks of (100)- and (200)-planes for PZT were clearly observed with laser irradiation at 80mJ/cm2. On the other hand, the (100)- and (200)-peaks for PZT became lower as the annealing temperature was lower than 200°C. Even though the (100)- and (200)-peaks for PZT were very weak, an appreciable diffraction peak was identified at room temperature, showing the possibility of the room temperature crystallization of the CSD-derived ferroelectric thin films by KrF excimier laser irradiation. These results demonstrated that the crystallization of ferroelectric PZT thin films was enhanced by KrF excimier laser irradiation and the oriented LNO thin film as a seeding layer, and that the laser annealing technique is the powerful tool for the low-temperature crystallization of ferroelectric thin films. [ABSTRACT FROM AUTHOR]

Abstract: (001) oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films with high piezoelectric constant were deposited by the electric field-assisted annealing (EFA-A) of alkoxide-derived precursor thin films. So far, selective orientation control of (001) domain and (100) domain is very difficult, especially for the chemical solution deposition (CSD). We tried an electric field induced domain control to improve the electrical properties with CSD. An electric field of 10kV/cm has been applied during an annealing. The high (001) domain ratio of 75.6% was obtained from the deconvolution of (002) and (200) X-ray diffraction peaks. The PZT thin films showed very high piezoelectric constant of 352pm/V. This shows electric field induced domain control is very effective to enhance the electrical properties of CSD-derived PZT thin films. [ABSTRACT FROM AUTHOR]

PbTiO3 (PT) thin films were prepared on various substrates by a simple sol–gel technique. The surface morphology and crystal structure, dielectric, and ferroelectric properties of the thin films were investigated. The orientation of PT thin films on Pt/Ti/Si substrates can gradually change with the annealing temperature from a-axis preferential orientation to c-axis preferential orientation. The PT films on Pt/Ti/SiO2/Si substrates have a bi-axis preferential orientation, whereas the films on LaNiO3/SiO2/Si substrates are randomly oriented due to the random orientation of LaNiO3 (LNO) electrode. The dielectric constant, dissipation factor, remanent polarization, coercive field are found to be 143, 0.032, 21.45 μC cm−2, and 115.3 kV cm−1, respectively, for the thin films on Pt/Ti/Si, and 115, 0.022, 17.1 μC cm−2, and 132.1 kV cm−1, respectively, for the thin films on Pt/Ti/SiO2/Si substrates annealed at 600 °C, whereas the remanent polarization and coercive field of PT films on LNO/SiO2/Si substrates annealed at 650 °C are 27.345 μC cm−2 and 71.1 kV cm−1, respectively. [Copyright &y& Elsevier]

Abstract We prepared two-dimensional close-packed hemispherical CoFe 2 O 4 (CFO)/Pb(Zr 0.52 Ti 0.48 O 3)(PZT)/LaNiO 3 (LNO)/NiO thin film on Si(100) substrate using a template made of monodispersed polymethyl methacrylate (PMMA) particles. LNO and NiO layers are introduced for the bottom electrode and seed to crystallize, respectively. Since this hemispherical thin film is connected with the substrate only at the "foot" of the hemisphere, this thin film has a hollow structure. Therefore we call this structure as "free-standing" thin film. In this work, we also prepared planar CFO/PZT/LNO/NiO thin film on Si(100) substrate without using the PMMA template for comparison. In this work, we examined the effect of applying a vertical external magnetic field on the ferroelectric property. It was found that applying an external magnetic field decreases remanent polarization (P r) for both planar and free-standing thin film. The degree of decrease of P r in the free-standing thin film is about four times larger than that in the planar thin film. This indicates that large multiferroic property (interaction between ferromagnetic and ferroelectric) is realized in the free-standing thin film. Graphical abstract Image 1 Highlights • Novel free-standing multiferroic film was prepared via physicochemical technique. • The negative magnetostriction of the CFO induces the polarization on the PZT. • The change of polarization in a free-standing film is larger than the planar film. • This study demonstrates to fabricate the ordered magnetoelectronic devices. [ABSTRACT FROM AUTHOR]

Cobalt ferrite Co x Fe 3− x O 4 thin films with composition within the miscibility gap were grown using Dynamic Aurora pulsed laser deposition. X-ray diffraction patterns reveal as-grown phase separation to Fe-rich and Co-rich phases with no post-deposition annealing. The interconnected surface microstructure of thin film shows that this phase separation occurs through spinodal decomposition enhanced by magnetic-field-induced ion-impingement. The lattice parameter variation of the thin films with the magnetic field indicates that the composition fluctuations can be enhanced further by increasing the magnetic field. Results show that spinodal decomposition enhancement by magnetic-field-induced ion-impingement is independent of the lattice-mismatch-induced strain. This approach can promote spinodal decomposition in any thin film with no post-deposition annealing process. [ABSTRACT FROM AUTHOR]

A strontium ruthenium oxide (SRO) electrode was deposited on a Si substrate using chemical solution deposition (CSD). For this study, the crystal orientation of the SRO electrode was controlled using a CSD-derived seeding layer deposited on a Si substrate. Thereby, SRO thin film with a -axis preferred orientation was obtained on the Si substrate. Furthermore, lead zirconate titanate (PZT) thin film with Zr/Ti=50/50 composition (PZT50) was deposited onto the a -axis oriented SRO layer. The deposited PZT thin film also exhibited preferred orientation in the direction of the a -axis and c -axis. The estimated remanent polarization and the effective piezoelectric constant ( d 33 e f f ) were, respectively, 20 μC/cm 2 and 298 pm/V. These values were nearly equal to those of the reported bulk PZT of the same composition. [ABSTRACT FROM AUTHOR]

For application as a variable thermal emittance material in a recently-developed thermal control system for spacecraft, (La 1 − x Sr x )MnO 3 − δ (LSMO) thin films with thicknesses of 1.2 μm, 2.5 μm, and 4.3 μm were fabricated on yttria-stabilized zirconia (100) substrates by a pulsed laser deposition and ex-situ annealing at 1123 K in air. All the films were dense and their surface roughness was much smaller than the thermal infrared (IR) wavelength. The films had (100) and (110)-preferred orientations, and the thicker films showed more preferable growth along the (100) orientation. Temperature–magnetization curves revealed that the LSMO films exhibited a metal–insulator transition near room temperature. The thermal emittance of the films estimated from IR reflectance spectra and black body radiation spectra exhibited large non-linearity near room temperature owing to the phase transition. The change in thermal emittance of the LSMO films that were more than 2.5 μm thick was comparable with that of the Ca-doped LSMO ceramic tiles already used as variable thermal emittance materials. Thus, this result clearly demonstrates that LSMO thin films with thickness of 2.5 μm can work as variable thermal emittance materials in the thermal control system for spacecraft. [ABSTRACT FROM AUTHOR]

Relaxor ferroelectrics Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 (PMN–PT) have attracted considerable attention because of their excellent electrical properties, which include high dielectricity and piezoelectricity. Their thin films are promising for use as super capacitors and piezoelectric actuators. However, the reported electrical properties of PMN–PT thin films, such as dielectric and piezoelectric properties, are markedly lower than those of bulk ceramics and single-crystals. This study investigated the effects of synthesis conditions such as annealing temperatures, excess lead amounts, and the molecular design of the precursor solution on the electrical properties of the Chemical Solution Deposition (CSD)-derived PMN–PT thin films to deposit single-phase perovskite PMN–PT thin films with superior electrical properties on a Si substrate at lower temperatures. Results of studies demonstrated effectively that suitable processing is necessary to elicit the enhanced electrical properties of PMN–PT thin films, such as introduction of suitable seeding layers and optimization of synthesis conditions. Results show that CSD-derived polycrystalline 0.65PMN–0.35PT thin films with preferred orientation exhibited a higher dielectric constant over 4000 (1 kHz, at room temperature) and higher remanent polarization of P r = 27.7 μC/cm 2 (1000 kV/cm, at room temperature) as well as a higher electrostrictive constant of d 33 about 200 pm/V. Further investigation and development are expected to improve these electrical properties of the PMN–PT thin films by stress engineering or residual stress. [ABSTRACT FROM AUTHOR]

Alkoxide-derived lead zirconate titanate thin films having Zr/Ti = 50/50 to 60/40 compositions with different residual stress conditions were deposited on a Si wafer to clarify the effects of the residual stress on the morphotropic phase boundary shift. The residual stress condition was controlled to − 0.1 to − 0.9 GPa by the design of the buffer layer structure on the Si wafer. Results show that the maximum effective piezoelectric constant d 33 was obtained at 58/42 composition under − 0.9 GPa compressive residual stress condition. Moreover, the MPB composition shifted linearly to Zr-rich phase with increasing compressive residual stress. [ABSTRACT FROM AUTHOR]

Abstract: 12CaO·7Al2O3 (C12A7) is known as a component of alumina cement and shows various remarkable properties: generation of high oxidizing power using oxygen radical O−, high electric conductivity (∼1500Scm−1) for the electron clathrated one, etc. Most of the C12A7 thin film fabrication processes reported have been based on PLD method so far, which require high vacuum level and high energy consumption. In order to fabricate the C12A7 films with low energy consumption process, we prepared C12A7 films on MgO(100) substrate by chemical solution deposition (CSD) method from alkoxide solution. Aluminum sec.-butoxide and calcium metal were used as raw materials, and 2-methoxy ethanol was used as a solvent. Crystallization behavior, crystal structure, and morphology of the prepared film, were investigated by XRD, SEM, and TG-DTA. The C12A7 film prepared by the CSD method was mostly polycrystalline, but it showed high peak intensity at (211) and (422) reflection compared to the powder C12A7 peaks. This implied the C12A7 film includes slightly (211) oriented grains among the polycrystalline on the MgO(100) substrate. [ABSTRACT FROM AUTHOR]

Abstract: Effect of the thermal expansion coefficient of electrode on the electrical properties in lead zirconate titanate (PZT) with morphotropic phase boundary (Pb(Zr0.53,Ti0.47)O3: MPB) composition film was demonstrated in this paper. The lanthanum nickel oxide (LaNiO3: LNO) and lanthanum strontium cobalt oxide ((La0.5,Sr0.5)CoO3: LSCO) was deposited by chemical solution deposition (CSD) as bottom electrode on Si wafer. Highly (100)-oriented LSCO layers were successfully prepared by CSD on Si wafer using (100)-oriented LNO layers as seeding layer for the crystal orientation control. As a result, (100) and (001) oriented PZT film was also successfully prepared on LSCO/LNO/Si stacking structure. The obtained dielectric and ferroelectric properties changed according to the thermal stress which was influenced by the bottom electrode thickness. [Copyright &y& Elsevier]